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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Operational Amplifiers Input/Output Full Swing High Voltage Operation Low Supply Current CMOS Operational Amplifiers BD7541G BD7541SG BD7542xxx BD7542Sxxx General Descriptions BD7541G/BD7542xxx are high voltage operation input/output full swing CMOS operational amplifiers. BD7541SG/


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    BD7541G BD7541SG BD7542xxx BD7542Sxxx BD7541G/BD7542xxx BD7541SG/ BD7542Sxxx BD7541G/BD7542xxx BD7541SG/BD7542Sxxx BD7541G/BD7541SG PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX3 Series ●General The PWM type DC/DC converter BM2PXX3 for AC/DC provide an optimum system for all products that include an electrical outlet. BM2PXX3 supports both isolated and non-isolated


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    PDF

    MIMMG150DR120UZA

    Abstract: No abstract text available
    Text: MIMMG150DR120UZA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module


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    MIMMG150DR120UZA Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG150DR120UZA PDF

    MIMMG150DR120UA

    Abstract: No abstract text available
    Text: MIMMG150DR120UA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module


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    MIMMG150DR120UA Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG150DR120UA PDF

    MIMMG75SR060UK

    Abstract: No abstract text available
    Text: MIMMG75SR060UK 600V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module


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    MIMMG75SR060UK Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG75SR060UK PDF

    BU7241G

    Abstract: No abstract text available
    Text: Datasheet Operational Amplifiers Input/Output Full Swing Low Supply Current CMOS Operational Amplifiers BU7241G BU7241SG BU7242xxx BU7242Sxxx General Description  Operating Supply Voltage Range: +1.8V to +5.5V  Operating Temperature Range: BU7241G, BU7242xxx, BU7244xx


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    BU7241G BU7241SG BU7242xxx BU7242Sxxx BU7241G, BU7242xxx, BU7244xx BU7241SG, BU7242Sxxx, BU7244Sxx BU7241G PDF

    MIMMG200DR120UZA

    Abstract: No abstract text available
    Text: MIMMG200DR120UZA 1200V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module


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    MIMMG200DR120UZA Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG200DR120UZA PDF

    MIMMG40H120XB6TN

    Abstract: 1 phase igbt 1200V 40A module inverter circuit diagram
    Text: MIMMG40H120XB6TN 1200V 40A PIM Module RoHS Compliant FEATURES □ High level of integration—only one power semiconductor module required for the whole drive □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current


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    MIMMG40H120XB6TN Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG40H120XB6TN 1 phase igbt 1200V 40A module inverter circuit diagram PDF

    MIMMG150DR120UK

    Abstract: AC welder circuit diagram
    Text: MIMMG150DR120UK 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module


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    MIMMG150DR120UK Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG150DR120UK AC welder circuit diagram PDF

    MIMMG75SR120B

    Abstract: No abstract text available
    Text: MIMMG75SR120B 1200V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module


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    MIMMG75SR120B Tempera75 Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG75SR120B PDF

    ADCMP600BRJZ-R2

    Abstract: ADCMP600 ADCMP601 ADCMP602 MAX999 jedec MO-203 AA
    Text: Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparators ADCMP600/ADCMP601/ADCMP602 Fully specified rail to rail at VCC = 2.5 V to 5.5 V Input common-mode voltage from −0.2 V to VCC + 0.2 V Low glitch CMOS-/TTL-compatible output stage


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    ADCMP600/ADCMP601/ADCMP602 MAX999 ADCMP600/ ADCMP601/ ADCMP602 ADCMP600) ADCMP602 D05914-0-1/11 ADCMP600BRJZ-R2 ADCMP600 ADCMP601 MAX999 jedec MO-203 AA PDF

    ba1s

    Abstract: No abstract text available
    Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


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    IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s PDF

    K4R271669E

    Abstract: No abstract text available
    Text: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


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    K4R271669E 128Mbit K4R271669E PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    HFBR-2522

    Abstract: No abstract text available
    Text: Versatile Link Family Application Note 1035 Introduction Optical fiber technology has changed data communication transfer especially in the industrial environment, where data must be transferred between machines rapidly while still ensuring high reliability. Optical fiber is typically fabricated


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    5964-40027E AV02-0730EN HFBR-2522 PDF

    IS43LR16640A

    Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


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    IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit -40oC 64Mx16 IS43LR16640A-5BLI IS43LR16640A-6BLI 60-ball IS43LR16640A IS46LR16640A-5BLA1 IS43LR16640A-6BL PDF

    bt 2323

    Abstract: TX-2G
    Text: AWL9966 802.11a/b/g/n WLAN/Bluetooth FEIC PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • 3% Dynamic EVM @ POUT = +17 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 3% Dynamic EVM @ POUT = +20 dBm with IEEE 802.11g 64 QAM OFDM at 54 Mbps • -30 dBc 1st Sidelobe / -50 dBc 2nd Sidelobe


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    11a/b/g/n AWL9966 bt 2323 TX-2G PDF

    MP-25

    Abstract: NP88N055CLE NP88N055DLE NP88N055ELE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CLE, NP88N055DLE, NP88N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


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    NP88N055CLE, NP88N055DLE, NP88N055ELE NP88N055CLE O-262 O-220AB NP88N055DLE O-263 O-220AB) MP-25 NP88N055CLE NP88N055DLE NP88N055ELE PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    16-BIT M16C/29 REJ09B0101-0112 PDF

    LM358 microphone

    Abstract: BC547 lm358 current limiter 1dz 2 BC178B Biopolar Transistor Chips NPN lm358 sum PBL3853 1N4148 BZ-115
    Text: May 1996 PBL 3853 Universal Speech Circuit Description Key Features The PBL 3853 is a biopolar integrated speech circuit with specific parameters making it highly suitable to be used as a line interface and speech circuit in a telephone line powered electronic payphone. Emphasis has been put on low current consumption in


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    3853SO 3853SO-T S-164 LM358 microphone BC547 lm358 current limiter 1dz 2 BC178B Biopolar Transistor Chips NPN lm358 sum PBL3853 1N4148 BZ-115 PDF

    LCMXO2-1200HC-4TG100C

    Abstract: LCMXO2-256HC-4TG100I LCMXO2-1200 tn1200 lcmxo2 LCMXO2-1200HC-4TG100 LCMXO2-2000 LCMXO2-7000 MachXO2-1200 LCMXO2-4000HC
    Text: MachXO2 Family Handbook HB1010 Version 01.0, November 2010 MachXO2 Family Handbook Table of Contents November 2010 Section I. MachXO2 Family Data Sheet Introduction Features . 1-1


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    HB1010 LCMXO2-1200HC-4TG100C LCMXO2-256HC-4TG100I LCMXO2-1200 tn1200 lcmxo2 LCMXO2-1200HC-4TG100 LCMXO2-2000 LCMXO2-7000 MachXO2-1200 LCMXO2-4000HC PDF

    HSYNC GENERATE PIXEL CLOCK

    Abstract: 0mW-10mW
    Text: N LM9627 Color CMOS Image Sensor VGA 30 FPS General Description Applications The LM9627 is a high performance, low power, third inch VGA CMOS Active Pixel Sensor capable of capturing color digital still or motion images and converting them to a digital data stream.


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    LM9627 HSYNC GENERATE PIXEL CLOCK 0mW-10mW PDF

    d1409

    Abstract: NP40N055CHE NP40N055KHE MP-25 NP40N055DHE NP40N055EHE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP40N055CHE,NP40N055DHE,NP40N055EHE,NP40N055KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


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    NP40N055CHE NP40N055DHE NP40N055EHE NP40N055KHE O-262 NP40N055EHE O-220AB NP40N055DHE NP40N055CHE O-263 d1409 NP40N055KHE MP-25 PDF

    32F8020

    Abstract: No abstract text available
    Text: ju t 1 « * » SSI 32P4722 jilic o n á tík m í' Pulse Detector & Data Separator A TDK Group/Company Advance Information June 1993 DESCRIPTION FEATURES The SSI 32P4722 is a low power, high performance bipolar device that provides pulse detection, data synchronization, and ENDEC electronics on a single


    OCR Scan
    32P4722 32P4722 extern52-Pin 32F8020 PDF