Low Dropout Positive
Abstract: No abstract text available
Text: 300MA HIGH PSRR LOW DROPOUT CMOS LINEAR REGULATOR FSP2134 FEATURES z z z z z z z z z z z z Low dropout voltage: 180mV at 300mA Vo=3.3V Quiescent current: Typ. 65µA 2% Voltage Accuracy High PSRR: 70dB at 1KHz Thermal Shutdown Current Limiting Excellent line and load regulation
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300MA
FSP2134
180mV
300mA
FSP2134
FSP2134XXXX
Low Dropout Positive
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Untitled
Abstract: No abstract text available
Text: Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 General Description Features The AZ4580 is a monolithic dual low noise operational amplifier. It is specifically designed for audio systems to improve tone control; it can also be used in preamplifier, industrial measurement tools and applications where gain and phase matched channels are mandatory.
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AZ4580
AZ4580
110dB
vol6-21-6485
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Untitled
Abstract: No abstract text available
Text: Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 General Description Features The AZ4580 is a monolithic dual low noise operational amplifier. It is specifically designed for audio systems to improve tone control; it can also be used in preamplifier, industrial measurement tools and applications where gain and phase matched channels are mandatory.
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AZ4580
AZ4580
110dB
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MIMMG150DR120UZA
Abstract: No abstract text available
Text: MIMMG150DR120UZA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module
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MIMMG150DR120UZA
Figure12.
Figure13.
Figure14.
Figure15.
Figure16.
MIMMG150DR120UZA
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MIMMG200S060B6EN
Abstract: No abstract text available
Text: MIMMG200S060B6EN 600V 200A IGBT Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ VCE sat with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery
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MIMMG200S060B6EN
25CEV
tsc10
Figure10.
Figure11.
Figure12.
MIMMG200S060B6EN
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MIMMG150DR120UA
Abstract: No abstract text available
Text: MIMMG150DR120UA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module
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MIMMG150DR120UA
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MIMMG150DR120UA
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MIMMG75SR060UK
Abstract: No abstract text available
Text: MIMMG75SR060UK 600V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module
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MIMMG75SR060UK
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MIMMG75SR060UK
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MIMMG200DR120UZA
Abstract: No abstract text available
Text: MIMMG200DR120UZA 1200V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module
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MIMMG200DR120UZA
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MIMMG200DR120UZA
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MIMMG40H120XB6TN
Abstract: 1 phase igbt 1200V 40A module inverter circuit diagram
Text: MIMMG40H120XB6TN 1200V 40A PIM Module RoHS Compliant FEATURES □ High level of integration—only one power semiconductor module required for the whole drive □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current
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MIMMG40H120XB6TN
Figure12.
Figure13.
Figure14.
Figure15.
Figure16.
MIMMG40H120XB6TN
1 phase igbt 1200V 40A module
inverter circuit diagram
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MIMMG150W120X6TN
Abstract: No abstract text available
Text: MIMMG150W120X6TN 1200V 150A Six-Pack Module RoHS Compliant FEATURES □ High level of integration 3 □ IGBT CHIP Trench+Field Stop technology □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery
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MIMMG150W120X6TN
Figure10.
Figure11.
Figure12.
Figure13.
MIMMG150W120X6TN
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MIMMG150DR120UK
Abstract: AC welder circuit diagram
Text: MIMMG150DR120UK 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module
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MIMMG150DR120UK
Figure12.
Figure13.
Figure14.
Figure15.
Figure16.
MIMMG150DR120UK
AC welder circuit diagram
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MIMMG75SR120B
Abstract: No abstract text available
Text: MIMMG75SR120B 1200V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module
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MIMMG75SR120B
Tempera75
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MIMMG75SR120B
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bridgelux test LM80
Abstract: LM80 bridgelux EN62471 W3500 bridgelux BXRA cfl assembly manufacturing process C5000 C8000 DS16 LM80
Text: Bridgelux RS Array Series Product Data Sheet DS16 BXRA – W3500, - W5700, - N4000, - N6300, - C5000, - C8000 Introduction The Bridgelux family of LED Array products delivers high performance, compact and cost-effective solidstate lighting solutions to serve the general lighting market. These products combine the higher efficacy,
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W3500,
W5700,
N4000,
N6300,
C5000,
C8000
bridgelux test LM80
LM80 bridgelux
EN62471
W3500
bridgelux BXRA
cfl assembly manufacturing process
C5000
C8000
DS16
LM80
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ba1s
Abstract: No abstract text available
Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data
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IS43LR32400E
32Bits
IS43LR32400E
Figure38
90Ball
-25oC
4Mx32
IS43LR32400E-6BLE
ba1s
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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SAMSUNG NAND Flash Qualification Report
Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1208U0C
K9F1208R0C
K9F1208B0C
K9F1208X0C
K9F1208U0C-FIB00
\AVNET\09082007\SAMS\K9F1208U0C-PIB0T00
07-Sep-2007
K9F1208U0C-JIB00
K9F1208U0C-JIB0T
K9F1208U0C-PCB00
SAMSUNG NAND Flash Qualification Report
K9F1208U0CJIB0
marking date code samsung semiconductor
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HFBR-2522
Abstract: No abstract text available
Text: Versatile Link Family Application Note 1035 Introduction Optical fiber technology has changed data communication transfer especially in the industrial environment, where data must be transferred between machines rapidly while still ensuring high reliability. Optical fiber is typically fabricated
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5964-40027E
AV02-0730EN
HFBR-2522
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IS43LR16640A
Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16640A
16Bits
IS43/46LR16640A
16-bit
-40oC
64Mx16
IS43LR16640A-5BLI
IS43LR16640A-6BLI
60-ball
IS43LR16640A
IS46LR16640A-5BLA1
IS43LR16640A-6BL
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FSP2130
Abstract: marking code 10 sot23 series connection of linear mosfet
Text: 300MA HIGH PSRR LOW DROPOUT CMOS LINEAR REGULATOR FSP2130 FEATURES z z z z z z z z z z z Low dropout voltage: 180mV at 300mA Vo=3.3V Quiescent current: Typ. 65µA 2% Voltage Accuracy High PSRR: 70dB at 1KHz Thermal Shutdown Current Limiting Excellent line and load regulation
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300MA
FSP2130
180mV
300mA
OT23-3L
FSP2130
marking code 10 sot23
series connection of linear mosfet
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15w audio amplifier circuit diagram
Abstract: mosfet driver marking he sot23-6 MD4101 MO-178 2x500pF 1F MARKING SOT23-6 VA-2230A
Text: MD4101 1.5W Filterless Class-D Mono Audio Amplifier General Description Features The MD4101 is a single supply,high efficiency P O at 10% THD+N, VDD = 5V 1.5W class-D audio amplifier. A low noise, RL = 8 Ω filterless PWM architecture eliminates the output
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MD4101
MD4101
MO-178.
15w audio amplifier circuit diagram
mosfet driver marking he sot23-6
MO-178
2x500pF
1F MARKING SOT23-6
VA-2230A
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5m48h
Abstract: S12XEP100 MC9S12XEP7682 xnor* Freescale S12XEP100 hcs12 moda modb xgate 5m48h 2M53 S12XES384 3M25J 9S12XEG128 MC9S12XEQ512 XEG128
Text: HCS12X Microcontrollers MC9S12XEP100RMV1 Rev. 1.19 12/2008 freescale.com Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available from Freescale for import or sale in the United States prior to September 2010: S12XE products in 208 MAPBGA packages
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HCS12X
MC9S12XEP100RMV1
S12XE
MC9S12XEP100
MC9S12XE
S12XE-Family
5m48h
S12XEP100
MC9S12XEP7682
xnor* Freescale S12XEP100 hcs12 moda modb xgate 5m48h
2M53
S12XES384
3M25J
9S12XEG128
MC9S12XEQ512
XEG128
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MP-25
Abstract: NP88N055CLE NP88N055DLE NP88N055ELE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CLE, NP88N055DLE, NP88N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP88N055CLE,
NP88N055DLE,
NP88N055ELE
NP88N055CLE
O-262
O-220AB
NP88N055DLE
O-263
O-220AB)
MP-25
NP88N055CLE
NP88N055DLE
NP88N055ELE
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312A-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312A-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS Mobile
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PD4632312A-X
32M-BIT
16-BIT
PD4632312A-X
48-pin
I/O15)
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H10D4890
Abstract: D4850C d480 D4812C w046 H10D4850 H12CA4850 H12CD4850 H12D4850 H12D4890
Text: CRYDOM CO b u l l e t , n 8 2 31E T> m 5542537 □ □ □ □ m D 7 • CRY F2^-B/ C3YDOM C O M P A N Y SERIES 1-HV SCR Output Solid-State Relays 8 Thru 90 Amp High Voltage, AC Output GENERAL DESCRIPTION Opto-lsolated 4000 VRMS ■ Zero Voltage Switching AC ■
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D6935
H10D4890
D4850C
d480
D4812C
w046
H10D4850
H12CA4850
H12CD4850
H12D4850
H12D4890
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