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Infineon Technologies AG S25FL512SAGMFIG11 IC FLASH 512MBIT SPI/QUAD 16SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	S25FL512SAGMFIG11	Tube	256		1	1 $10.11 10 $8.975 100 $7.99191 1000 $7.314 10000 $7.05424	Buy Now
Avnet Americas	S25FL512SAGMFIG11	Tube	171	53 Weeks, 1 Days	1	1 $6.8805 10 $6.8805 100 $6.8805 1000 $6.8805 10000 $6.8805	Buy Now
	S25FL512SAGMFIG11	Tube		0 Weeks, 2 Days	93	1 - 10 - 100 $7.884 1000 $7.128 10000 $6.696	Buy Now
Mouser Electronics	S25FL512SAGMFIG11		508			1 $9.56 10 $8.86 100 $7.53 1000 $7.03 10000 $7.03	Buy Now
Chip1Stop	S25FL512SAGMFIG11	Tube	261			1 $6.02 10 $6 100 $5.89 1000 $5.88 10000 $5.88	Buy Now
	S25FL512SAGMFIG11		188			1 $15.4 10 $11.7 100 $7.58 1000 $7.58 10000 $7.58	Buy Now
	S25FL512SAGMFIG11		33			1 $9.475 10 $8.752 100 $7.55 1000 $7.55 10000 $7.55	Buy Now
EBV Elektronik	S25FL512SAGMFIG11			11 Weeks	235	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG S25FL512SDPMFIG11 IC FLASH 512MBIT SPI/QUAD 16SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	S25FL512SDPMFIG11	Tube	193		1	1 $10.11 10 $8.975 100 $7.99191 1000 $7.314 10000 $7.05424	Buy Now
Mouser Electronics	S25FL512SDPMFIG11		314			1 $9.56 10 $8.86 100 $7.58 1000 $6.88 10000 $6.88	Buy Now
Chip1Stop	S25FL512SDPMFIG11	Tube	705			1 $6.77 10 $6.74 100 $6.59 1000 $6.15 10000 $6.15	Buy Now
	S25FL512SDPMFIG11		34			1 $15.5 10 $11.8 100 $8.54 1000 $8.54 10000 $8.54	Buy Now
EBV Elektronik	S25FL512SDPMFIG11			11 Weeks	705	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG S25FL128SDPMFIG11 IC FLASH 128MBIT SPI/QUAD 16SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	S25FL128SDPMFIG11	Tube	188		1	1 $5.18 10 $4.599 100 $4.09596 1000 $3.74921 10000 $3.61636	Buy Now
Avnet Americas	S25FL128SDPMFIG11	Tube		10 Weeks	235	1 - 10 - 100 - 1000 $3.37075 10000 $3.37075	Buy Now
Mouser Electronics	S25FL128SDPMFIG11		1,131			1 $5.1 10 $4.1 100 $4.01 1000 $3.55 10000 $3.55	Buy Now
Newark	S25FL128SDPMFIG11	Bulk	233		1	1 $5.46 10 $4.96 100 $4.33 1000 $4.31 10000 $4.31	Buy Now
EBV Elektronik	S25FL128SDPMFIG11			11 Weeks	235	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG S25FL128SAGMFIG11 IC FLASH 128MBIT SPI/QUAD 16SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	S25FL128SAGMFIG11	Tube			705	1 - 10 - 100 - 1000 $3.68921 10000 $3.68921	Buy Now
Avnet Americas	S25FL128SAGMFIG11	Tube		0 Weeks, 2 Days	223	1 - 10 - 100 - 1000 $3.15 10000 $2.97	Buy Now
	S25FL128SAGMFIG11	Tube		4 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	S25FL128SAGMFIG11		608			1 $5.09 10 $4.62 100 $4.03 1000 $3.01 10000 $3.01	Buy Now
EBV Elektronik	S25FL128SAGMFIG11			11 Weeks	705	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics S25FL128SAGMFIG11 IC FLASH 128MBIT SPI/QUAD 16SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	S25FL128SAGMFIG11	Tube			305	1 - 10 - 100 - 1000 $3.01 10000 $3.01	Buy Now

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FIG11 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
6968e Abstract: TF6968E D002P 65a3 Text: TF6968E Dual N-Channel MOSFET – ESD Protected VDS=20V RDS ON , VGS # 9 P RDS(ON), VGS # 9 P RDS(ON), VGS # 9 P ID = 6.5A Features • Advanced trench process technology • Specially designed for Li-lon battery packs • Designed for battery switch applications	Original	PDF	TF6968E 6968E FIG10-Maximum FIG11- 100ms 6968e TF6968E D002P 65a3
Untitled Abstract: No abstract text available Text: ＩＧＢＴＭｏｄｕｌｅ－Ｓｉｘ－ＰａｃｋＰＴＭＢ７５Ｂ１２７５Ａ，１２００Ｖ □ 回路図：ＣＩＲＣＵＩＴ □ 外形寸法図：ＯＵＴＬＩＮＥＤＲＡＷＩＮＧ 94 80 4-Ø5.5 7-M4 2 3 1 18	Original	PDF	12-fasten fig11-Tansient
Untitled Abstract: No abstract text available Text: ＩＧＢＴＭｏｄｕｌｅ－ＣｈｏｐｐｅｒＰＲＨＭＢ７５Ｂ１２Ａ７５Ａ，１２００Ｖ □ 外形寸法図：ＯＵＴＬＩＮＥＤＲＡＷＩＮＧ 11 2 1 C2E1 1 (E2) 2 (C1) 3 94 80 ± 0 .2 5 12 11 2-Ø 5.5 12 7	Original	PDF	fig11-Tansient
Untitled Abstract: No abstract text available Text: ＩＧＢＴＭｏｄｕｌｅ－ＣｈｏｐｐｅｒＰＲＨＭＢ５０Ｂ１２５０Ａ，１２００Ｖ □ 外形寸法図：ＯＵＴＬＩＮＥＤＲＡＷＩＮＧ E2 2 (C1) 3 94 80 ± 0 .2 5 12 11 2 1 2-Ø 5.5 12 7 6 3 12 (C2E1)	Original	PDF	TC125 fig11-Tansient
Untitled Abstract: No abstract text available Text: ＩＧＢＴＭｏｄｕｌｅ－ＣｈｏｐｐｅｒＰＣＨＭＢ５０Ｂ１２Ａ５０Ａ，１２００Ｖ □ 回路図：ＣＩＲＣＵＩＴ □ 外形寸法図：ＯＵＴＬＩＮＥＤＲＡＷＩＮＧ 12 E2 2 (C1) 3 94 80 ± 0 .2 5	Original	PDF	TC125 fig11-Tansient
Untitled Abstract: No abstract text available Text: ＩＧＢＴＭｏｄｕｌｅ－Ｓｉｘ－Ｐａｃｋ：ＣＩＲＣＵＩＴ □ 回路図ＰＴＭＢ５０Ｂ１２Ｃ５０Ａ，１２００Ｖ □ 外形寸法図：ＯＵＴＬＩＮＥＤＲＡＷＩＮＧ 93.00 4x 15.24= 60.96	Original	PDF	TC125 fig11-Tansient
Untitled Abstract: No abstract text available Text: ＩＧＢＴＭｏｄｕｌｅ－ＣｈｏｐｐｅｒＰＣＨＭＢ５０Ｂ１２５０Ａ，１２００Ｖ □ 回路図：ＣＩＲＣＵＩＴ □ 外形寸法図：ＯＵＴＬＩＮＥＤＲＡＷＩＮＧ 12 11 94 80 ± 0 .2 5 12 11	Original	PDF	TC125 fig11-Tansient
Untitled Abstract: No abstract text available Text: REV. 1.1 FS6611-DS-11_EN Datasheet FS6611 Energy Metering IC with Impulse Output SEP 2006 FS6611 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742	Original	PDF	FS6611-DS-11 FS6611 FS6611
Untitled Abstract: No abstract text available Text: IGBT SPseries PTMB75B12C SixSix-Pack 75A 1200V CIRCUIT OUTLINE DRAWING Dimension mm Approximate Weight : 330g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range	Original	PDF	PTMB75B12C fig11-Tansient
Untitled Abstract: No abstract text available Text: PCHMB75B12 IGBT MODULE Chopper 75A 1200V CIRCUIT OUTLINE DRAWING 2- fasten- tab No 110 Dimension mm Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation	Original	PDF	PCHMB75B12 fig11-Tansient
Untitled Abstract: No abstract text available Text: PRHMB75B12 IGBT MODULE Chopper 75A 1200V CIRCUIT OUTLINE DRAWING 2- fasten- tab No 110 Dimension mm Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation	Original	PDF	PRHMB75B12 fig11-Tansient
Untitled Abstract: No abstract text available Text: IGBT MODULE PDMB75B12 Dual 75A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension mm Approximate Weight : 320g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation	Original	PDF	PDMB75B12 fig11-Tansient
Untitled Abstract: No abstract text available Text: Preliminary LC5830K DATA SHEET LC5830K DATA SHEET Rev.0.3 Rev.0.3 The contents in this data sheet are preliminary, and are subject to changes without notice. SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp Copy Right: SANKEN ELECTRIC CO., LTD. Page.1	Original	PDF	LC5830K LC5830K
TK10203AM9 Abstract: No abstract text available Text: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5. PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS	Original	PDF	TK10203AM9 GC3-L017A TK10203AM9/1 HSON3030C-10 600mW* CM105B105K16K 200mA TK10203AM9

CM105B104K25A Abstract: CT21X5R105K25A TK10202AM9 AP-478 Text: アプリケーションマニュアル 1ch定電流HブリッジドライバICのご紹介 TK10202AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS	Original	PDF	TK10202AM9 GC3-L008A HSON3030C-8 200mA) 600mW* 1k200mA 8k150mA CM105B104K25A CT21X5R105K25A TK10202AM9 AP-478
MUN2216 Abstract: MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c Text: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)	Original	PDF	MUN2211 SC-59 23-Jan-09 FIG32. FIG33. FIG34. SC-59 MUN2216 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c
EEEFK1V101AP Abstract: d8 d8 Text: Aluminum Electrolytic Capacitors/ FK Surface Mount Type Series: FK FK Type: V High temperature Lead-Free reflow suffix:A✽ • Features ● Endurance: 2000 h at 105 °C ● Low impedance (40 % to 60 % less than FC series) Miniaturized (30 % to 50 % less than FC series)	Original	PDF	EE188 Fig-11) EE186 EEEFK1V101AP d8 d8
EEE1CA101WAP Abstract: EEE1CA100AR Text: Aluminum Electrolytic Capacitors/ S Surface Mount Type Series: S Type: V S High temperature Lead-Free reflow suffix:A✽ • Features ● Endurance: 85 °C 2000 h ● Vibration-proof product is available upon request.(φ8 mm and larger) ● RoHS directive compliant	Original	PDF	EEE1HA330UAP EEE1HA330XAP EEE1HA330AP EEE1HA470XAP EEE1HA470UAP EEE1HA470AP EEE1HA101UAP EEE1HA101AP EEE1HA221UAP EE188 EEE1CA101WAP EEE1CA100AR
Untitled Abstract: No abstract text available Text: Aluminum Electrolytic Capacitors/TP Surface Mount Type Series: TP TP Type: V High temperature Lead-Free reflow suffix:A✽ • Features ● ● ● ● ● Lower ESR at Low temperature after endurance Endurance: 3000 h at 125 °C(D8 size : 2000 h) Automotive	Original	PDF	EE188 Fig-11) EE186
KHB7D5N60F1 Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V Text: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor	Original	PDF	KHB7D5N60P1/F1/F2 KHB7D0N60P1 Fig15. Fig16. Fig17. KHB7D5N60F1 KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
KHB5D0N50F Abstract: KHB5D0N50P KHB5D0N50F2 Text: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	PDF	KHB5D0N50P/F/F2 KHB5D0N50P Fig15. Fig16. Fig17. KHB5D0N50F KHB5D0N50P KHB5D0N50F2
KHB019N20F1 Abstract: KHB019N20F2 KHB019N20P1 Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters	Original	PDF	KHB019N20P1/F1/F2 KHB019N20P1 Fig15. Fig16. Fig17. KHB019N20F1 KHB019N20F2 KHB019N20P1
CI 3060 elsys Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60 Text: Pre! iminary K S0090 26C O M /64SEG DRIVER & CONTROLLER FO R STN LCD Rev. 7.0 1. INTRODUCTION DOT MATRIX LCD CONTROLLER & DRIVER K S 0090/90-I K S 0090 / K S0090I is a d o t matrix LC D driver & controller LSI w hich is fabricated by low p o w e r C M O S technology. It can display 2 or 3 lines with 5 x 8 dots form a t.	OCR Scan	PDF	KS0090 26COM/64SEG KS0090/90-I KS0090I KS0090I CI 3060 elsys rs 3060 cj KS* I2C driver LCD driver KS SEG60
AN8028 Abstract: Power Supply Control IC IAN8028 SIP009-P-0000 pulse transformer fet 3B7 transformer Text: Panasonic Voltage Regulators AN8028 Self-excitation RCCArtificial ResonanceType Power-supply Supporting 1CforAC-DC Converter Control • Overview The AN8028 is an 1C for controlling the switching power supply, employing the RCC artificial resonance type con	OCR Scan	PDF	AN8028 AN8028 001Ebfi4 IAN8028 Power Supply Control IC SIP009-P-0000 pulse transformer fet 3B7 transformer

FIG11 Search Results

FIG11 Price and Stock

Infineon Technologies AG S25FL512SAGMFIG11

Infineon Technologies AG S25FL512SDPMFIG11

Infineon Technologies AG S25FL128SDPMFIG11

Infineon Technologies AG S25FL128SAGMFIG11

Flip Electronics S25FL128SAGMFIG11

FIG11 Datasheets Context Search

6968e

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TK10203AM9

CM105B104K25A

MUN2216

EEEFK1V101AP

EEE1CA101WAP

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KHB7D5N60F1

KHB5D0N50F

KHB019N20F1

CI 3060 elsys

AN8028