KHB7D5N60F1
Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
Text: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KHB7D5N60P1/F1/F2
KHB7D0N60P1
Fig15.
Fig16.
Fig17.
KHB7D5N60F1
KHB7D5N60F
KHB7D5N60P1
KHB7D5N60F2
tjc3
D 92 M - 02 DIODE
VDD-300V
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khb7D5N60F
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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Original
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PDF
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KHB7D5N60P1/F1/F2
KHB7D0N60P1
KHB7D5N60P1
dI/dt200A/,
khb7D5N60F
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