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    FIELD EFFECT TRANSISTOR PNP Search Results

    FIELD EFFECT TRANSISTOR PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    FIELD EFFECT TRANSISTOR PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for


    Original     		PDF TPCP8F01

    TPCP8F01

    Abstract: No abstract text available
    Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive


    Original     		PDF TPCP8F01 TPCP8F01

    IGBT/MOSFET Gate Drive

    Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
    Text: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it


    Original     		PDF 20-May-09 IGBT/MOSFET Gate Drive IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging

    transistor equivalent table 557

    Abstract: 21045F
    Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F

    TPCP8F01

    Abstract: MARKING CODE 24 TRANSISTOR
    Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A 5 8 • 0.475 High DC current gain: hFE = 200 to 500 IC = −0.5 A


    Original     		PDF TPCP8F01 TPCP8F01 MARKING CODE 24 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTX321U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR POWER MANAGEMENT. FEATURES B B1 Including two devices in US6. Ultra Super mini type with 6 leads 1 6 2 5 3 4 DIM A A1 B A C Reduce a quantity of parts and manufacturing process.


    Original     		PDF KTX321U

    siemens igbt chip

    Abstract: Semiconductor Group igbt break resistor in igbt bup 314 siemens igbt application note
    Text: IGBT Insulated Gate Bipolar Transistor 1 Differences Between MOSFET and IGBT 1.1 Structure The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only difference lies in the additional


    Original     		PDF

    KTX321U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTX321U EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR POWER MANAGEMENT. FEATURES B B1 Including two devices in US6. Ultra Super mini type with 6 leads 1 6 2 5 3 4 DIM A A1 B A C Reduce a quantity of parts and manufacturing process.


    Original     		PDF KTX321U KTX321U

    KTX321U

    Abstract: ISS-53 ISS53
    Text: SEMICONDUCTOR KTX321U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR POWER MANAGEMENT. FEATURES B B1 Including two devices in US6. Ultra Super mini type with 6 leads 1 6 2 5 3 4 DIM A A1 B A C Reduce a quantity of parts and manufacturing process.


    Original     		PDF KTX321U KTX321U ISS-53 ISS53

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF9045MR1 RDMRF9045MR1

    Application Note 91

    Abstract: 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp
    Text: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 91 IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect


    Original     		PDF 24-Oct-11 Application Note 91 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp

    CJB99

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 3, 12/2005 RF Reference Design Library RF Power Field Effect Transistor MRF21120R6 UMTS N - Channel Enhancement - Mode Lateral MOSFET


    Original     		PDF MRF21120R6 CJB99

    marking code va6

    Abstract: No abstract text available
    Text: DRV3204-Q1 www.ti.com SLVSBT3A – MARCH 2013 – REVISED MARCH 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor


    Original     		PDF DRV3204-Q1 DRV3204-Q1 marking code va6

    Untitled

    Abstract: No abstract text available
    Text: DRV3204-Q1 www.ti.com SLVSBT3A – MARCH 2013 – REVISED MARCH 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor


    Original     		PDF DRV3204-Q1 DRV3204-Q1

    DIN 72 585

    Abstract: VB11 MARKING 5 PIN
    Text: DRV3204-Q1 www.ti.com SLVSBT3A – MARCH 2013 – REVISED MARCH 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor


    Original     		PDF DRV3204-Q1 48-Pin DRV3204-Q1 DIN 72 585 VB11 MARKING 5 PIN

    Untitled

    Abstract: No abstract text available
    Text: DRV3204-Q1 www.ti.com SLVSBT3B – MARCH 2013 – REVISED JULY 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor


    Original     		PDF DRV3204-Q1 48-Pin DRV3204-Q1

    Untitled

    Abstract: No abstract text available
    Text: DRV3204-Q1 www.ti.com SLVSBT3B – MARCH 2013 – REVISED JULY 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor


    Original     		PDF DRV3204-Q1 DRV3204-Q1

    Untitled

    Abstract: No abstract text available
    Text: DRV3204-Q1 www.ti.com SLVSBT3A – MARCH 2013 – REVISED MARCH 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor


    Original     		PDF DRV3204-Q1 DRV3204-Q1

    MOSFET marking Z5

    Abstract: 56590653B z14 b marking Freescale MARKING W3
    Text: Document Number: MRF284 Rev. 18, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF284LSR1 Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LSR1 MOSFET marking Z5 56590653B z14 b marking Freescale MARKING W3

    Untitled

    Abstract: No abstract text available
    Text: DRV3204E-Q1 www.ti.com SLVSCB5A – OCTOBER 2013 – REVISED JANUARY 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204E-Q1 FEATURES DESCRIPTION • • The DRV3204E-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor


    Original     		PDF DRV3204E-Q1 DRV3204E-Q1

    Untitled

    Abstract: No abstract text available
    Text: DRV3204E-Q1 www.ti.com SLVSCB5A – OCTOBER 2013 – REVISED JANUARY 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204E-Q1 FEATURES DESCRIPTION • • The DRV3204E-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor


    Original     		PDF DRV3204E-Q1 DRV3204E-Q1

    MRF282

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF282-1 Rev. 16, 10/2008 RF Power Field Effect Transistor MRF282SR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282--1 MRF282SR1 MRF282--1 MRF282

    FDV302P

    Abstract: SOIC-16 Zener Diode SOT-23 302 sot 23
    Text: SEMICONDUCTOR FDV302P Digital FET, P-Channel General Description Features This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF FDV302P OT-23 FDV302P SOIC-16 Zener Diode SOT-23 302 sot 23

    transistor 5bw

    Abstract: TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave
    Text: 9. Summarized Characteristics Table 4. Bipolar Transistor« Bipolar Transistors, Field Effect Transistors and Diodes Absolute M aximum Ratings Te*25uC Type No. Structure PNP Epitaxial Package N E C M INI M O L O Regular' Electrical Characteristics Ta«25°C>


    OCR Scan     		PDF 2SK67 2SK160 transistor 5bw TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave