Untitled
Abstract: No abstract text available
Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for
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TPCP8F01
Abstract: No abstract text available
Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive
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TPCP8F01
TPCP8F01
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IGBT/MOSFET Gate Drive
Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
Text: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it
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20-May-09
IGBT/MOSFET Gate Drive
IGBT PNP
power BJT anti saturation diode
Gate Drive Optocoupler
optocoupler drive relay
IGBT gate drive for a boost converter
IGBT gate driver ic
high side MOSFET driver optocoupler
IGBT cross
igbt dc to dc converter capacitor charging
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transistor equivalent table 557
Abstract: 21045F
Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
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AGR18030EF
DS04-204RFPP
PB04-101RFPP)
transistor equivalent table 557
21045F
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TPCP8F01
Abstract: MARKING CODE 24 TRANSISTOR
Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A 5 8 • 0.475 High DC current gain: hFE = 200 to 500 IC = −0.5 A
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TPCP8F01
TPCP8F01
MARKING CODE 24 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTX321U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR POWER MANAGEMENT. FEATURES B B1 Including two devices in US6. Ultra Super mini type with 6 leads 1 6 2 5 3 4 DIM A A1 B A C Reduce a quantity of parts and manufacturing process.
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siemens igbt chip
Abstract: Semiconductor Group igbt break resistor in igbt bup 314 siemens igbt application note
Text: IGBT Insulated Gate Bipolar Transistor 1 Differences Between MOSFET and IGBT 1.1 Structure The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only difference lies in the additional
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KTX321U
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTX321U EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR POWER MANAGEMENT. FEATURES B B1 Including two devices in US6. Ultra Super mini type with 6 leads 1 6 2 5 3 4 DIM A A1 B A C Reduce a quantity of parts and manufacturing process.
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KTX321U
KTX321U
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KTX321U
Abstract: ISS-53 ISS53
Text: SEMICONDUCTOR KTX321U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR POWER MANAGEMENT. FEATURES B B1 Including two devices in US6. Ultra Super mini type with 6 leads 1 6 2 5 3 4 DIM A A1 B A C Reduce a quantity of parts and manufacturing process.
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KTX321U
KTX321U
ISS-53
ISS53
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET
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MRF9045MR1
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Application Note 91
Abstract: 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp
Text: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 91 IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect
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Application Note 91
81227
power BJT anti saturation diode
IGBT gate driver ic
optocoupler without base pin for mosfet driver
IGBT EQUIVALENT
BJT isolated Base Drive circuit
mosfet igbt gate driver ic
IGBT parallel DRIVE OSCILLATION
optocoupler pnp
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CJB99
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 3, 12/2005 RF Reference Design Library RF Power Field Effect Transistor MRF21120R6 UMTS N - Channel Enhancement - Mode Lateral MOSFET
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marking code va6
Abstract: No abstract text available
Text: DRV3204-Q1 www.ti.com SLVSBT3A – MARCH 2013 – REVISED MARCH 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor
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marking code va6
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Untitled
Abstract: No abstract text available
Text: DRV3204-Q1 www.ti.com SLVSBT3A – MARCH 2013 – REVISED MARCH 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor
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DIN 72 585
Abstract: VB11 MARKING 5 PIN
Text: DRV3204-Q1 www.ti.com SLVSBT3A – MARCH 2013 – REVISED MARCH 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor
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48-Pin
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DIN 72 585
VB11 MARKING 5 PIN
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Untitled
Abstract: No abstract text available
Text: DRV3204-Q1 www.ti.com SLVSBT3B – MARCH 2013 – REVISED JULY 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor
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Untitled
Abstract: No abstract text available
Text: DRV3204-Q1 www.ti.com SLVSBT3B – MARCH 2013 – REVISED JULY 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor
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Untitled
Abstract: No abstract text available
Text: DRV3204-Q1 www.ti.com SLVSBT3A – MARCH 2013 – REVISED MARCH 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor
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MOSFET marking Z5
Abstract: 56590653B z14 b marking Freescale MARKING W3
Text: Document Number: MRF284 Rev. 18, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF284LSR1 Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
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MRF284LSR1
MOSFET marking Z5
56590653B
z14 b marking
Freescale MARKING W3
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Untitled
Abstract: No abstract text available
Text: DRV3204E-Q1 www.ti.com SLVSCB5A – OCTOBER 2013 – REVISED JANUARY 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204E-Q1 FEATURES DESCRIPTION • • The DRV3204E-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor
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Untitled
Abstract: No abstract text available
Text: DRV3204E-Q1 www.ti.com SLVSCB5A – OCTOBER 2013 – REVISED JANUARY 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204E-Q1 FEATURES DESCRIPTION • • The DRV3204E-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor
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MRF282
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF282-1 Rev. 16, 10/2008 RF Power Field Effect Transistor MRF282SR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
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MRF282SR1
MRF282--1
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FDV302P
Abstract: SOIC-16 Zener Diode SOT-23 302 sot 23
Text: SEMICONDUCTOR FDV302P Digital FET, P-Channel General Description Features This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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FDV302P
OT-23
FDV302P
SOIC-16
Zener Diode SOT-23
302 sot 23
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transistor 5bw
Abstract: TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave
Text: 9. Summarized Characteristics Table 4. Bipolar Transistor« Bipolar Transistors, Field Effect Transistors and Diodes Absolute M aximum Ratings Te*25uC Type No. Structure PNP Epitaxial Package N E C M INI M O L O Regular' Electrical Characteristics Ta«25°C>
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2SK67
2SK160
transistor 5bw
TRANSISTOR 5DW
5dw transistor
3bw transistor
2SC1009
transistor 3bw
1bw npn
NPN2SC2351
nec m
nec microwave
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