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    Untitled

    Abstract: No abstract text available
    Text: 4N25V, 4N25GV, 4N35V, 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 E 4 • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection • Low temperature coefficient of CTR


    Original
    PDF 4N25V, 4N25GV, 4N35V, 4N35GV 4N35GV 2011/65/EU 2002/95/EC.

    CNY17G-3

    Abstract: CNY17G CNY17G-1 CNY17G-2 iec 60112 cti CNY17G3
    Text: CNY17G Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection B 6 C 5 E 4 1 2 3 A + C (-) NC 17201_5 V D E 18537_3 DESCRIPTION The CNY17G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic


    Original
    PDF CNY17G CNY17G UL1577, E52744, FI25155 UL94V-O 18-Jul-08 CNY17G-3 CNY17G-1 CNY17G-2 iec 60112 cti CNY17G3

    VO615A2X019T

    Abstract: No abstract text available
    Text: VO615A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated C FEATURES E • • • • • • 1 A • C • • • 17918-23 DESCRIPTION • The VO615A consists of a phototransistor optically coupled


    Original
    PDF VO615A 0110/resp. 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VO615A2X019T

    Untitled

    Abstract: No abstract text available
    Text: VO615A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated FEATURES C E • • • • • • 1 A • C • • • 17918-23 DESCRIPTION • The VO615A consists of a phototransistor optically coupled


    Original
    PDF VO615A VO615A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    CNY75GC

    Abstract: CNY75GB CNY75GA CNY75C bs 415 Diode ttr CNY75A CNY75B cny75g
    Text: CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES B 6 C 5 E 4 • Isolation materials according to UL 94-VO • Pollution degree IEC 60664 2 DIN/VDE 0110/resp. • Climatic classification 55/110/21 (IEC 60068


    Original
    PDF CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC 94-VO 0110/resp. 18-Jul-08 CNY75GC CNY75GB CNY75GA CNY75C bs 415 Diode ttr CNY75A CNY75B cny75g

    VO615A-1X001

    Abstract: VO615AX017T VO615A2X019T VO615A-2X019T
    Text: VO615A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated C FEATURES E • • • • • • 1 A • C • • • 17918-23 DESCRIPTION • The VO615A consists of a phototransistor optically coupled


    Original
    PDF VO615A 0110/resp. 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VO615A-1X001 VO615AX017T VO615A2X019T VO615A-2X019T

    Untitled

    Abstract: No abstract text available
    Text: CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES B 6 C 5 E 4 • Isolation materials according to UL 94-VO • Pollution degree IEC 60664 2 DIN/VDE 0110/resp. • Climatic classification 55/110/21 (IEC 60068


    Original
    PDF CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC 94-VO 0110/resp. 2002/95/EC. 2002/95/EC

    VO615A8X017T

    Abstract: VO615A-4X017T VO615A-4X007T VO615A-6X017T
    Text: VO615A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature C FEATURES E • Temperature range - 55 °C to + 110 °C • Rated impulse voltage transient overvoltage  VIOTM = 6 kVpeak • Isolation test voltage (partial discharge test


    Original
    PDF VO615A VO615A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VO615A8X017T VO615A-4X017T VO615A-4X007T VO615A-6X017T

    cqy80ng

    Abstract: CQY80N CQY80
    Text: CQY80N, CQY80NG Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES B 6 1 C 5 2 E 4 3 A + C (-) NC • Isolation materials according to UL94-VO • Pollution degree IEC 60664) 2 (DIN/VDE 0110/resp. • Special construction: therefore, extra low


    Original
    PDF CQY80N, CQY80NG UL94-VO 0110/resp. CQY80N 18-Jul-08 cqy80ng CQY80

    4N35GV

    Abstract: 4N25 4N25GV 4N25V 4N35V 4N35GV Series
    Text: 4N25V, 4N25GV, 4N35V, 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 E 4 • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection • Low temperature coefficient of CTR


    Original
    PDF 4N25V, 4N25GV, 4N35V, 4N35GV 4N35GV 0303/lectual 18-Jul-08 4N25 4N25GV 4N25V 4N35V 4N35GV Series

    CNY75GC

    Abstract: CNY75C CNY75A CNY75B CNY75GA CNY75GB 260VRMS diode Rl 257
    Text: CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES B 6 C 5 E 4 • Isolation materials according to UL 94-VO • Pollution degree IEC 60664 2 DIN/VDE 0110/resp. • Climatic classification 55/110/21 (IEC 60068


    Original
    PDF CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC 94-VO 0110/resp. 11-Mar-11 CNY75GC CNY75C CNY75A CNY75B CNY75GA CNY75GB 260VRMS diode Rl 257

    CNY75ga

    Abstract: CNY75C
    Text: CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES B 6 C 5 E 4 • Isolation materials according to UL 94-VO • Pollution degree IEC 60664 2 DIN/VDE 0110/resp. • Climatic classification 55/110/21 (IEC 60068


    Original
    PDF CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC 94-VO 0110/resp. CNY75ga CNY75C

    4N25GV

    Abstract: 4N25 4N25V 4N35GV 4N35V
    Text: 4N25V, 4N25GV, 4N35V, 4N35GV Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES B 6 C 5 E 4 • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection • Low temperature coefficient of CTR


    Original
    PDF 4N25V, 4N25GV, 4N35V, 4N35GV 4N35GV 11-Mar-11 4N25GV 4N25 4N25V 4N35V

    K233PG

    Abstract: CQY80N IEC60747 VDE0884 K233P
    Text: K233P, K233PG Vishay Semiconductors Optocoupler with Phototransistor Output FEATURES B 6 C 5 E 4 • Rated impulse voltage transient overvoltage VIOTM = 6 kV peak • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV • Rated isolation voltage (RMS includes DC)


    Original
    PDF K233P, K233PG UL94-VO 0110/resp. 18-Jul-08 K233PG CQY80N IEC60747 VDE0884 K233P