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    Power MOSFET N-Channel sot-23

    Abstract: FHFJ202 marking IGF
    Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 N-Channel General Purpose Amplifier FHFJ202 MOSFET Transistors 场效应管 MAXIMUM RATINGS(Ta=25℃) 最大额定值


    Original     		PDF FHFJ202) FHFJ202 VDS20V OT-23 Power MOSFET N-Channel sot-23 marking IGF

    FET electret microphone

    Abstract: No abstract text available
    Text: 結型場效應管 N-channel Junction FET FHFJ202 N-channel Junction FET 结型场效应管 DESCRIPTION & FEATURES 概述及特點 Excellent voltage characteristics. 卓越電壓特性 Excellent transient characteristics. 卓越瞬間特性 Especially suited for use in electret condenser microphone.


    Original     		PDF OT-23 FHFJ202 OT-23 062in, 024in, FHFJ201 VDS20V FET electret microphone

    FHK301N

    Abstract: marking IGF FHK84P Zero-Gate Voltage Drain Current FHK131 FHK138 SOT 23 MOSFET FHK170 VGS 20v FHK139
    Text: SOT-23 MOS 场效应三极管（SOT-23 MOSFET TRANSISTORS） 型号 TYPE FHK84P FHK119 FHK123 FHK131 FHK138 FHK139 FHK145 FHK149 FHK169 FHK170 FHK284P FHK301N FHK302P FHK303N FHK304P FHK336P FHK337N FHK338P FHK340P FHK357N FHK358P FHK359AN FHK360P FHK7002


    Original     		PDF OT-23 FHK84P FHK119 FHK123 FHK131 FHK138 FHK139 FHK145 FHK149 FHK301N marking IGF FHK84P Zero-Gate Voltage Drain Current FHK131 FHK138 SOT 23 MOSFET FHK170 VGS 20v FHK139