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    Abstract: No abstract text available
    Text: QOQ ᒦ৖ൈहࡍྯ૵਌ Medium Power Transistor PNP Medium Power Transistor(PNP) FHB1132 QOQ ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 1) Low VCE (sat) = -0.2V(Typ) (IC / IB =-500mA/-50mA) 2) Complements the FHD1664 3) Epitaxial planar type,


    Original     		PDF -500mA/-50mA) FHD1664 FHB1132 OT-89 OT-89 FHB1132P FHB1132Q -100mA -500mA -50mA

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    Abstract: No abstract text available
    Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 SOT-89 Medium Power Transistor FHB1132 FEATURES特征 •Low VCE sat = -0.2V (Typ.) (IC / IB = –500mA / –50mA)


    Original     		PDF OT-89 FHB1132 500mA FHB1132P FHB1132Q FHB1132R -100mA -500mA -50mA 30MHz