Untitled
Abstract: No abstract text available
Text: QOQ ᒦൈहࡍྯ Medium Power Transistor PNP Medium Power Transistor(PNP) FHB1132 QOQ ᒦൈहࡍྯ DESCRIPTION & FEATURES 概述及特點 1) Low VCE (sat) = -0.2V(Typ) (IC / IB =-500mA/-50mA) 2) Complements the FHD1664 3) Epitaxial planar type,
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-500mA/-50mA)
FHD1664
FHB1132
OT-89
OT-89
FHB1132P
FHB1132Q
-100mA
-500mA
-50mA
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Untitled
Abstract: No abstract text available
Text: NPN ᒦൈहࡍྯ Medium Power Transistor NPN Medium Power Transistor(NPN) FHD1664 NPN ᒦൈहࡍྯ DESCRIPTION & FEATURES 概述及特點 1) Low VCE (sat) = 0.15V(Typ) (IC / IB =500mA/50mA) 2) Complements the FHB1132 3) Epitaxial planar type,
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Original
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500mA/50mA)
FHB1132
OT-89
FHD1664
OT-89
DED1664Q
FHD1664R
100mA
500mA
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Untitled
Abstract: No abstract text available
Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 SOT-89 Medium Power Transistor FHB1132 FEATURES特征 •Low VCE sat = -0.2V (Typ.) (IC / IB = –500mA / –50mA)
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OT-89
FHB1132
500mA
FHB1132P
FHB1132Q
FHB1132R
-100mA
-500mA
-50mA
30MHz
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FHD2391
Abstract: FHFCX491 FHC4 FHBC869
Text: SOT-89 NPN 三极管（SOT-89 NPN TRANSISTORS） 产品名称 DEVICE 耗散 特征 峰值 正向 击穿电压 击穿电压 击穿电压 反向漏电流 反向漏电流 功率 频率 电流 电流 V BR CBO V(BR)CEO V(BR) EBO ICBO IEBO Ptot fT ICM IC (W) (MHz)
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OT-89
FHBC868
FHBC868-16
FHBC868-25
FHBCV29
FHBCV49
FHFCX591A
FHFCX593
FHFCX596
FHD2391
FHFCX491
FHC4
FHBC869
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