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    Vishay Semiconductors FGP50D-E3/54

    DIODE GEN PURP 200V 5A GP20
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    Vishay Semiconductors FGP50D-E3/73

    DIODE GEN PURP 200V 5A GP20
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    Vishay Siliconix FGP50D-E3/54

    FGP50D-E3/54, Diode, 200V 5A, 35ns, 2-Pin GP20 | Siliconix / Vishay FGP50D-E3/54
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    RS FGP50D-E3/54 Bulk 60
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    FGP50D Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FGP50D-E3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE UFAST 200V 5A GP20 Original PDF
    FGP50D-E3/73 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE UFAST 200V 5A GP20 Original PDF
    FGP50DHE3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE UFAST 200V 5A GP20 Original PDF
    FGP50DHE3/73 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE UFAST 200V 5A GP20 Original PDF

    FGP50D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FGP50B thru FGP50D Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics 5.0 A 100 V to 200 V IFSM 135 A trr 35 ns VF 0.95 V IR 5.0 µA Tj max. 175 °C Features • • • • • • • • ted* n e t Pa GP20 *Glass Encapsulation


    Original     		PDF FGP50B FGP50D MIL-S-19500 10-Aug-05

    GP20

    Abstract: JESD22-B102D J-STD-002B
    Text: FGP50B thru FGP50D New Product Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 5.0 A VRRM 100 V to 200 V IFSM 135 A trr 35 ns VF 0.95 V IR 5.0 µA Tj max. 175 °C ted* n e t Pa GP20 *Glass Encapsulation


    Original     		PDF FGP50B FGP50D UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05 GP20 JESD22-B102D

    Untitled

    Abstract: No abstract text available
    Text: New Product FGP50B thru FGP50D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ultrafast reverse recovery time


    Original     		PDF FGP50B FGP50D MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC.

    gp20 diode

    Abstract: No abstract text available
    Text: FGP50B, FGP50C, FGP50D www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction • Ultrafast reverse recovery time


    Original     		PDF FGP50B, FGP50C, FGP50D 22-B106 AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A gp20 diode

    GP20

    Abstract: J-STD-002
    Text: New Product FGP50B thru FGP50D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency


    Original     		PDF FGP50B FGP50D MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 GP20 J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: New Product FGP50B thru FGP50D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ultrafast reverse recovery time


    Original     		PDF FGP50B FGP50D MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: FGP50B thru FGP50D New Product Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop d* e t n e Pat *Glass Encapsulation technique is covered by


    Original     		PDF FGP50B FGP50D MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: New Product FGP50B thru FGP50D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current d* e t n e Pat • Low switching losses, high efficiency


    Original     		PDF FGP50B FGP50D MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product FGP50B thru FGP50D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current d* e t n e Pat • Low switching losses, high efficiency


    Original     		PDF FGP50B FGP50D MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: New Product FGP50B thru FGP50D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ultrafast reverse recovery time


    Original     		PDF FGP50B FGP50D MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product FGP50B thru FGP50D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop


    Original     		PDF FGP50B FGP50D MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08

    GP20

    Abstract: JESD22-B102D J-STD-002B
    Text: New Product FGP50B thru FGP50D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop d* e t n e Pat *Glass Encapsulation technique is covered by


    Original     		PDF FGP50B FGP50D MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 GP20 JESD22-B102D J-STD-002B

    COLOR tv tube charger circuit diagrams

    Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a

    MUR120 SMD

    Abstract: diode DGP30 VH500 SMA UF4007 SMD DIODE UF4007 b330la UGF10FCT ss2ph10 UGF5 uf5408 SMD diode
    Text: 半導体: 整流素子 • 小信号ダイオード • ツェナーダイオードとサージ吸収素子 • MOSFETs • 高周波トランジスタ • オプトエレクトロニクス • ICs 受動素子: 抵抗器 • 磁性体 • キャパシタ • ひずみゲージ変換器および応力解析システム


    Original     		PDF UL94V-0) ITO-220AB O-220 MUR120 SMD diode DGP30 VH500 SMA UF4007 SMD DIODE UF4007 b330la UGF10FCT ss2ph10 UGF5 uf5408 SMD diode