bluetooth AVR
Abstract: interface bluetooth with AVR ATMEGA 16 AT89S55WD interface bluetooth with AVR ATMEGA8 AT89S55 interface bluetooth with AVR atmega128 TH7890M Battery Charging Controller with ATMega8 AT89S51RC Pt 1000 sensor connection avr
Text: R PRODUCT GUIDE September 2001 AT90 Series AVR Flash Microcontrollers Part Number Processor Description Availability AT90S1200 AVR AVR RISC, In-System Programmable Microcontroller with 1K Byte Flash and 64 Bytes EEPROM, 20-pin PDIP, 20-lead SOIC and 20-lead SSOP Packages
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AT90S1200
20-pin
20-lead
AT90S2313
AT90S2323
AT90LS2323
ARM946E-S
bluetooth AVR
interface bluetooth with AVR ATMEGA 16
AT89S55WD
interface bluetooth with AVR ATMEGA8
AT89S55
interface bluetooth with AVR atmega128
TH7890M
Battery Charging Controller with ATMega8
AT89S51RC
Pt 1000 sensor connection avr
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Mil-Std-883B
Abstract: smd FFs antifuse programming technology resistance array smd transistor military datasheet CF100 CF160 antifuse QuickLogic
Text: pASIC Military FPGAs Non-Volatile, High Reliability and High Security Programmable Logic Solutions Rev. A FAMILY HIGHLIGHTS High Reliability -Available in Military Temperature and MIL-STD-883B/SMD -Standard Microcircuit Drawings SMD available Design Security
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MIL-STD-883B/SMD
QL12x16B
QL16x24B
MIL-STD-883B
smd FFs
antifuse programming technology
resistance array smd
transistor military datasheet
CF100
CF160
antifuse
QuickLogic
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CF100
Abstract: Mil-Std-883B antifuse programming technology pASIC 1 Family smd FFs CF160
Text: pASIC Military FPGAs Non-Volatile, High Reliability and High Security Programmable Logic Solutions Rev. A FAMILY HIGHLIGHTS High Reliability -Available in Military Temperature and MIL-STD-883B/SMD -Standard Microcircuit Drawings SMD available Design Security
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MIL-STD-883B/SMD
QL12x16B
MIL-STD-883B
CF100
antifuse programming technology
pASIC 1 Family
smd FFs
CF160
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irg4pc50fd
Abstract: RG4PC30FD
Text: nternationol I G R Rectifier Pari IGBTs V - VCES Max.VcE on Collector-to-Emitter Voltage Colledor-lo-Emitlef Voltage (V) 00 Number £ N ffS •c Continuous Collector Current Tr =25°C T r=25°C (A) (A) h Fax Max. Power Dissipation (W) Demand Number on Xï vL )/
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3-10kHz
T0-220AB
IRG4BC20FD
IRG4BC30FD
O-247AC
RG4PC30FD
IRG4PC40FD
IRG4PC50FD
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Untitled
Abstract: No abstract text available
Text: 127mm L 27mm. {0.05'' Center SMD Pin Header Dual Row 10 io 100 Contacw 0083D Series 04m m \ 0,l)157/;i Square IV>yj A P P L IC A T IO N 1 . S id e 2. V a ria b le 3. S ta n d o ffs 4 . M a tes such AND F E A T U R E S s tc c k o b le p in S P E C IF IC A T IO N S
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127mm
0083D
0155D
0083D
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Untitled
Abstract: No abstract text available
Text: ECLiPTEK' CORPORATION EV32C6 Series Voltage Controlled Crystal Osdllator VCXO 3.3V Supply Voltage HCMOS output with Tri-State function Ceramic 6-pad SMD package APR Performance to ±100ppm Commerdal and Industrial Temperature Range ^ELECTRICAL SPECIFICATIONS
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EV32C6
100ppm
288MH
50ppm
seconds/95%
80Q-ECLIPTEK
EV32C6
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smd FFs
Abstract: FFs smd
Text: SMD CSSPD KP SERIES K P ^ U -X • O U TL IN E D IM E N S IO N S KP10N12, 14 ■ RATINGS Absolute Maximum Ratings Item Symbol Conditions ^_J[ype IMo, KP10N12 T s tg -4 0 -125 •c Ju n c tio n T em perature Tj 125 ‘C Surge O n-S tate Current I tsm d v /d t
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KP10N12,
10/1000/iS
KP10N12
KP10N14
10/200a
KP10N12
smd FFs
FFs smd
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Untitled
Abstract: No abstract text available
Text: SMD CSSPD KL SERIES K L ìs 'J -X • OUTLINE DIMENSIONS KL3N14 24 4.2 ■ RATINGS Absolute Maximum Ratings Electrical Characteristics Breakover V o lta g e V B0 O ff-S ta te C urre nt Idrm H o lding C urre nt IH O n -S ta te V o lta g e VT J u n c tio n C a p a c ita n c e
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KL3N14
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cv190
Abstract: No abstract text available
Text: SMD CSSPD KP SERIES KP S/'J-X • OUTLINE DIMENSIONS KP4R25 f cd u v e o <3 . CM ft«/ sQ / ‘/ A . / - 1 >■7 > < V K< r> *9—y CM 7.6 t , ! F : m m ■ RATINGS Absolute Maximum Ratings Item Symbol Storage Temperature Junction Temperature Maximum O ff-State Voltage
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KP4R25
Q0D4T47
cv190
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Untitled
Abstract: No abstract text available
Text: SMD CSSPD KP SERIES KPS/'J-X • OUTLINE DIMENSIONS KP15L07, 08 ■ RATINGS Absolute Maximum Ratings -^ _ T y p e N o, Item Sym bol Storage Temperature Tstg - 4 0 -125 •c Junction Temperature Tj 125 •C Maximum O ff-State Voltage Conditions Vj>R]k| 58 Itsm
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KP15L07,
KP15L07
P15L08
10/200/rs
8/20/iS
AS113A?
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Untitled
Abstract: No abstract text available
Text: T k B ilH l? Crystal Unit KSS CX-49G a n s i- n s ') - k $ < ~ f/ SMD • ^ H /F e a tu re s • KffiJtSSftWJE7 M M U c M T T o • It is a 4.5mm high, compact, crystal unit for surface mounting. • It is able to cope by means of a metal case and completely sealed
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CX-49G
2-54MHZ
50x10-6
999MHz
194303MHz
10-54MHZ
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741 comparator
Abstract: tba 741 tba222 ic 741 comparator SMD 741 amplifier MA 741 ic 741 TBA221B Q67000-A281 tl 741
Text: Single Operational Amplifiers TBA 221; TBB 741 TBA 222; TBB 742 Bipolar IC Features • • • • • • • • NPN input High differential input voltage Short-circuit proof High voltage gain High supply voltage 44 V Wide temperature range TBA 222, TBB 742
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Q67000-A281
Q67000-A2280
Q67000-A8057
Q67000-A1498
Q67000-A2395-G403
741 comparator
tba 741
tba222
ic 741 comparator
SMD 741
amplifier MA 741
ic 741
TBA221B
tl 741
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smd diode marking JC
Abstract: DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220
Text: Schottky Barrier Diode Twin Diode m n m DF30SC3ML o u tlin e Unit I mm Weight 1.5« Typ Package ! STO-220 0 7h£9(M ) 30V 30A Feature • SMD • SMD 0 45 V • < S V f= . • P rrsm 0 45V • Low V f= . 7 ’K 3 > î / x (S K î Polarity • P r r s m R a t in g
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DF30SC3ML
STO-220
smd diode marking JC
DIODE BJE
DIODE BJE smd
marking JC diode
df30sc3
smd marking 5G
DF30SC3ML
hm marking smd DIODE
SHINDENGEN DIODE
sto220
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode M2FH3 U n it ‘ m m Package : M2F Weight 0.072« T y p 30V 6A Feature • /JvguSMD •«« V f=0.36V • Small SMD • Super-Low Vf=0.36V • I { "J t U — iiJ S K ih • Reverse connect protection for DC power source
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ffs transistor smd
Abstract: No abstract text available
Text: SG508 5ILICDN GENEF^L QUAD-NAND DRIVER U N EA R INTEGRATED CIRCUITS D E S C R IP T IO N FEATURES The SG508 is a Quad 2- Input N AND Driver with outputs capable of sustaining 100V breakdown voltage. Each TTL-compatible NAND gate controls a 500mA output sink transistor. This combination of a TTL-compatible gate
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SG508
500mA
MIL-STD-883
SG508
14-PIN
SG508H/883B
SG508H
ffs transistor smd
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triac mw 137
Abstract: WPPCT-N54D
Text: KiCAC Optoisolators Triac Driver Output i i i n n / ^ T 400V Volts Peak , DIP/ SMD/H WPPCT-N54D OGTIGS USR/CNR Listed (File # 223387) For 115/240 V rm s Application: Outside Dimension: Unit (mm) 1. Solenoid/Valve controls. T1. •O-.O. 2. Lighting controls.
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WPPCT-N54D
r050703
WPPCT-N546
triac mw 137
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Untitled
Abstract: No abstract text available
Text: HAL400, HAL401 Linear Hall Effect Sensor ICs in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. PRELIMINARY DATASHEET Marking Code Temperature Range Type A E C HAL400SO 400A 400E 400C HAL401 SO 401A 401 E
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HAL400,
HAL401
HAL400SO
HAL401
HAL400
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Untitled
Abstract: No abstract text available
Text: CRYSTAL OSCILLATORS CRYSTAL OSCILLATORS Ultra Miniature size SMD VC- TCXO S'J'fflRBHSM(vc-)TCXO DTO-341K2, DTO-441K2 SERIES •Features ■ftn • 1.7mm Hight • m >m SMD-VC-TCXO(O.lcc) • Ultra miniature size(O.lcc) • il«(D .3s max.) • Light weight(0.3g max.)
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DTO-341K2,
DTO-441K2
DTO-341K2
DTO-441K2
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TSH31
Abstract: No abstract text available
Text: Gl SGS-THOMSON TSH31 [ ID Œ S iü IM ï n 280MHz BANDWIDTH MOS INPUT SINGLE OPERATIONAL AMPLIFIER VERY LOW INPUT CURRENT : 2pA typ GAIN BANDWIDTH PRODUCT : 280MHz GAIN OF 2 STABILITY SLEW RATE : 300V/|is STANDARD PIN OUT N DIP8 D S08 P la stic P a cka g e
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TSH31
280MHz
280MHz
TSH31
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Untitled
Abstract: No abstract text available
Text: /T T SGS-THOMSON *7M, HD i[Li gìrMD(g@ TSH11 120MHz BANDWIDTH MOS INPUT SINGLE OPERATIONAL AMPLIFIER . . . . . VERY LOW INPUT CURRENT : 2pA typ GAIN BANDWIDTH PRODUCT : 120MHz UNITY GAIN STABLE SLEW RATE : 150V/|is STANDARD PIN OUT N DIP8 D S08 (P la stic P a cka g e
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TSH11
120MHz
120MHz
TSH11
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magnetic sensor circuit diagram
Abstract: Magnetic Field Sensor linear displacement sensor specification MAGNETIC PROXIMITY SENSOR application note hx 36 KMZ11B1 MLC716 strong magnetic field sensor hx 002
Text: Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DESCRIPTION The KM Z11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field
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KMZ11B1
KMZ11B1
Z11B1
magnetic sensor circuit diagram
Magnetic Field Sensor
linear displacement sensor specification
MAGNETIC PROXIMITY SENSOR application note
hx 36
MLC716
strong magnetic field sensor
hx 002
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1B68-550-547
Abstract: LT1037A MIL-M-3B510
Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-OA Table I: Exclude VjQ and aVjq /Atemp from PDA. if not tested, en and in at fo = 100 Hz. Guarantee, APPROVED 1989 NOV 15 Delete subgroups => r 2 and 3 for Iq S . Change Zq to Rq and maximum limit to P^, subgroup 1.
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MIL-M-38510,
P---------------------------------100Â
S50-M7
1B68-550-547
LT1037A
MIL-M-3B510
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TSH321
Abstract: No abstract text available
Text: Gl SGS-THOMSON TSH321 [ID Œ S iü IM ï n WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 300MHz GAIN OF 2 STABILITY SLEW RATE : 400V/|is VERY FAST SETTLING TIME : 60ns 0.1% VERY HIGH INPUT IMPEDANCE
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TSH321
300MHz
TSH321
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Untitled
Abstract: No abstract text available
Text: G l SGS-THOMSON TSH150 [ I D Œ S iü I M ï  n WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V/|is VERY FAST SETTLING TIME : 20ns 0.1% N DIP8 D S08
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TSH150
150MHz
TSH150
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