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    FF1200R17KP4_B2 Price and Stock

    Infineon Technologies AG FF1200R17KP4B2NOSA2

    IGBT MODULE 1700V 1200A
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    DigiKey FF1200R17KP4B2NOSA2 Tray 1 1
    • 1 $1195.67
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    Avnet Americas FF1200R17KP4B2NOSA2 Tray 42 Weeks 2
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    Infineon Technologies AG FF1200R17KP4_B2

    IGBT Modules IGBT 1700V 1200A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FF1200R17KP4_B2
    • 1 $1195.67
    • 10 $1195.67
    • 100 $1195.67
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    Win Source Electronics FF1200R17KP4_B2 100
    • 1 $893.75
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    FF1200R17KP4_B2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FF1200R17KP4_B2 Infineon Technologies IGBT Modules up to 1600V / 1700V Dual; Package: A-IHM130-1; IC (max): 1,200.0 A; VCE(sat) (typ): 1.9 V; Configuration: Dual Modules; Technology: IGBT4; Housing: IHM 130 mm; Original PDF
    FF1200R17KP4B2NOSA2 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE 1700V 1200A Original PDF

    FF1200R17KP4_B2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FF1200R17KP4_B2

    Abstract: No abstract text available
    Text: Technische Information / technical information FF1200R17KP4_B2 IGBT-Module IGBT-modules IHM-A Modul mit soft schaltendem Trench-IGBT4 IHM-A module with soft-switching Trench-IGBT4 Vorläufige Daten / preliminary data *+,- . #/ + 012 . # Typische Anwendungen


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    PDF FF1200R17KP4 FF1200R17KP4_B2

    FF1200R17KP4_B2

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF1200R17KP4_B2 IHM-A模块采用软特性的沟槽栅IGBT4 IHM-Amodulewithsoft-switchingTrench-IGBT4 初步数据/PreliminaryData VCES = 1700V IC nom = 1200A / ICRM = 2400A 典型应用


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    PDF FF1200R17KP4 FF1200R17KP4_B2

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/technicalinformation FF1200R17KP4_B2 IHM-AModulmitsoftschaltendemTrench-IGBT4 IHM-Amodulewithsoft-switchingTrench-IGBT4 VorläufigeDaten/Preliminarydata V†Š» = 1700V I† ÒÓÑ = 1200A / I†ç¢ = 2400A TypischeAnwendungen


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    PDF FF1200R17KP4

    FF1200R17KP4_B2

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules FF1200R17KP4_B2 IHM-Aモジュールソフトスイッチング トレンチIGBT4内蔵 IHM-Amodulewithsoft-switchingTrench-IGBT4 暫定データ/PreliminaryData


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    PDF FF1200R17KP4 FF1200R17KP4_B2

    BR98

    Abstract: FF1200R17KP4 9AaN
    Text: Technische Information / technical information FF1200R17KP4_B2 IGBT-Module IGBT-modules * ) () * 1 + , . + /, . + / 2 + - ,! + - ,! 3 0456 7 4 89: 7 , •( •) •) •, • $ ? •0 • + * . + / / + , • • • • • / ? + / + $/ 1? 2 / 0>$ + A BA ?


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    PDF FF1200R17KP4 BR98 9AaN

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FF1200R17KP4_B2 IHM-AModulmitsoftschaltendemTrench-IGBT4 IHM-Amodulewithsoft-switchingTrench-IGBT4 VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 1200A / ICRM = 2400A


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    PDF FF1200R17KP4

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FF1200R17KP4_B2 IHM-AModulmitsoftschaltendemTrench-IGBT4 IHM-Amodulewithsoft-switchingTrench-IGBT4 VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 1200A / ICRM = 2400A


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    PDF FF1200R17KP4

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF1200R17KP4_B2 IHM-A模块采用软特性的沟槽栅IGBT4 IHM-Amodulewithsoft-switchingTrench-IGBT4 初步数据/PreliminaryData VCES = 1700V IC nom = 1200A / ICRM = 2400A 典型应用


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    PDF FF1200R17KP4

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


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