TC-2303
Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085
Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its
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NE76184A
NE76184A
NE76184A-SL
NE76184A-T1
NE76184A-T1A
TC-2303
NEC 3377
transistor NEC D 582
transistor NEC D 587
NE76184A-SL
NE76184A-T1
NE76184A-T1A
p1085
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM76720 is the composite MOS FET (N-channel MOS FET and schottky
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2002/95/EC)
MTM76720
MTM76720
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
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MTM86727
MTM86727
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
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2002/95/EC)
MTM86727
MTM86727
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FC654601
Abstract: FET MARKING CODE FET MARKING
Text: FC654601 Tentative Total pages page FC654601 Silicon N-channel MOS FET FET1 Silicon N-channel MOS FET (FET2) For switching circuits Internal Connection Marking Symbol : V6 6 5 4 Package Code : SMini6-F3-B FET 1 Absolute Maximum Ratings Ta = 25 °C Parameter
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FC654601
FC654601
FET MARKING CODE
FET MARKING
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XP133A0245SR
Abstract: PCB405
Text: XP133A0245SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0245SR is a N-Channel Power MOS FET with low on-state
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XP133A0245SR
XP133A0245SR
PCB405
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XP133A1145SR
Abstract: No abstract text available
Text: XP133A1145SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A1145SR is a N-Channel Power MOS FET with low on-state
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XP133A1145SR
XP133A1145SR
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Pch MOS FET
Abstract: US6M2 TUMT6
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.
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85Max.
15Max.
Pch MOS FET
US6M2
TUMT6
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XP133A0175SR
Abstract: No abstract text available
Text: XP133A0175SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.075Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0175SR is a N-Channel Power MOS FET with low on-state
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XP133A0175SR
XP133A0175SR
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FET2
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview Package FG654301 is N-P channel dual type small signal MOS FET employed small
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2002/95/EC)
FG654301
FG654301
FET2
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QS6M4
Abstract: TSMT6 Pch MOS FET m04 fet
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.
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SGM2016AM
Abstract: SGM2016AP dual-gate
Text: SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,
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SGM2016AM/AP
SGM2016AM/AP
SGM2016AM
SGM2016AP
900MHz
M-254
SGM2016AM
SGM2016AP
dual-gate
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Untitled
Abstract: No abstract text available
Text: SGM2014AN GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
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SGM2014AN
SGM2014AN
M-281
900MHz
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SG 2368
Abstract: LS 2027 audio amp c 2688 nec LS 2027 amp
Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION N E76184A is a N-channel GaAs MES FET housed in ce ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. Its
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NE76184A
NE76184A
NE76184A-SL
NE76184A-T1
NE76184A-T1A
SG 2368
LS 2027 audio amp
c 2688 nec
LS 2027 amp
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sd2t
Abstract: No abstract text available
Text: THERMAL FET HAF2002 Silicon N Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability HITACHI ADE-208-503 1st. Edition Features This FET has the over temperature shut-dow n capability sensing to the junction temperature. This FET has the built-in over temperature shut-dow n circuit in the gate area. And this circuit
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HAF2002
ADE-208-503
-220FM
HAF2001.
sd2t
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NEZ1011-2E 2 W X-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The N EZ10 1 1-2E is pow er GaAs FET which provides 8.25 +0.15 high gain, high efficiency and high output power in XGate
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NEZ1011-2E
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Untitled
Abstract: No abstract text available
Text: SO N Y SGM2016AN GaAs N-channel Dual-Gate MES FET Prelim inary Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,
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SGM2016AN
SGM2016AN
900MHz
M-281
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NEC 2561
Abstract: sn 1699 NEC 2561 E 2561 a nec sn 0952 2561 nec nec d 1590 NEC semiconductor 2561 NEC 1357 NEC 2561 h
Text: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band.
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NE6501077
NE6501077
NEC 2561
sn 1699
NEC 2561 E
2561 a nec
sn 0952
2561 nec
nec d 1590
NEC semiconductor 2561
NEC 1357
NEC 2561 h
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0911A n iv n a b v L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 1 1 A , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. U n it: m illim eters FEATURES • •
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MGF0911A
GF-21
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ov 2094
Abstract: No abstract text available
Text: SONY 3SK165A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-nolse amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features
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3SK165A
800MHz
3SK165A
M-254
ov 2094
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Untitled
Abstract: No abstract text available
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
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Sony Semiconductor M-281
Abstract: No abstract text available
Text: SONY GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
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SGM2014AN
900MHz
900MHz
M-281
SGM2014AN
M-281
Sony Semiconductor M-281
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Untitled
Abstract: No abstract text available
Text: SONY GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
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SGM2014AM
900MHz
SGM2014AM
M-254
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NEC Ga FET marking Rf
Abstract: nec gaas fet marking
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.
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NE76184B
NE76184B
NE76184B-T1
NE76184B-T1A
IR30-00
NEC Ga FET marking Rf
nec gaas fet marking
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