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    FET E04 Search Results

    FET E04 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD8224ACPZ-WP Analog Devices Dual Channel FET Instrumentati Visit Analog Devices Buy
    AD820ARMZ-R7 Analog Devices FET INPT, SINGLE SPLY AMP Visit Analog Devices Buy
    ADA4817-1ARDZ-R7 Analog Devices High Speed FET Input Amp Visit Analog Devices Buy
    AD8220WARMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy
    AD8220BRMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy

    FET E04 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 1200V

    Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V


    Original     		PDF CMF20120D-Silicon CMF20120D O-247-3 CMF20120D mosfet 1200V cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET IXDI414 DMOS SiC JEDEC24 RB160M-60

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14580 Revision. 2 Product Standards MOS FET FC4B22070L FC4B22070L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 1.67 3 1 2 „ Features y Low source-source ON resistance:Rss on typ. = 17.5 m Ω（VGS = 4.5 V)


    Original     		PDF TT4-EA-14580 FC4B22070L

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14847 Revision. 1 Product Standards MOS FET FC6B22220L FC6B22220L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 „ Features y Low source-source ON resistance:Rss on typ. = 8.2 m Ω（VGS = 4.5 V)


    Original     		PDF TT4-EA-14847 FC6B22220L

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14734 Revision. 2 Product Standards MOS FET FC6B22100L FC6B22100L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features  Low source-source ON resistance:Rss on typ. = 8.2 m （VGS = 4.5 V)


    Original     		PDF TT4-EA-14734 FC6B22100L

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14513 Revision. 1 Product Standards MOS FET FC6B22090L FC6B22090L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features  Low source-source ON resistance:Rss on typ. = 8.5 m （VGS = 4.5 V)


    Original     		PDF TT4-EA-14513 FC6B22090L

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14952 Revision. 1 Product Standards MOS FET FC8V36060L FC8V36060L Single N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits For load switching 2.9 0.3 8 7 6 5 1 2 3 4 0.16 „ Features 2.4 2.8 y Low drain-source ON resistance:RDS on typ. = 70 mΩ（VGS = 4.5 V)


    Original     		PDF TT4-EA-14952 FC8V36060L UL-94

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14176 Revision. 2 Product Standards MOS FET FC4B21080L FC4B21080L Gate resistor installed Dual N-channel MOS FET Unit: mm • Package dimension For lithium-ion secondary battery protection circuits 1.11 3 1 2 1.11 4  Features 0.1  Low source-source ON resistance:Rss on typ. = 27 m （VGS = 4.5 V)


    Original     		PDF TT4-EA-14176 FC4B21080L

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF VP2450 DSFP-VP2450 B082613

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a


    Original     		PDF VN10K DSFP-VN10K B031411

    marking oc diode sot89

    Abstract: No abstract text available
    Text: Supertex inc. VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF VP3203 DSFP-VP3203 B082613 marking oc diode sot89

    Untitled

    Abstract: No abstract text available
    Text: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability


    Original     		PDF VP3203 VP3203 DSFP-VP3203 A042709

    VN1509

    Abstract: No abstract text available
    Text: Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode


    Original     		PDF VN0109 DSFP-VN0109 B071411 VN1509

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode


    Original     		PDF VN0104 DSFP-VN0104 B071411

    C031411

    Abstract: No abstract text available
    Text: Supertex inc. VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode


    Original     		PDF VN2406 DSFP-VN2406 C031411 C031411

    Untitled

    Abstract: No abstract text available
    Text: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 2.0V max. High input impedance and high gain Free from secondary breakdown Low CISS and fast switching speeds This low threshold, enhancement-mode (normally-off)


    Original     		PDF TN5325 DSFP-TN5325 A052009

    TN1L

    Abstract: No abstract text available
    Text: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage


    Original     		PDF TN0104 DSFP-TN0104 C071411 TN1L

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces


    Original     		PDF TN0106 DSFP-TN0106 B080811

    sot 23 x 316

    Abstract: fet sot-89 marking code sot-89 MARKING CODE ab TN5325 TN5325K1-G TN5325N3-G TN5325N8-G jedec sot-23
    Text: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF TN5325 DSFP-TN5325 A052009 sot 23 x 316 fet sot-89 marking code sot-89 MARKING CODE ab TN5325 TN5325K1-G TN5325N3-G TN5325N8-G jedec sot-23

    DN5MW

    Abstract: DN3545 DN3545N3-G DN3545N8-G
    Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF DN3545 DSFP-DN3545 B051909 DN5MW DN3545 DN3545N3-G DN3545N8-G

    D2625

    Abstract: No abstract text available
    Text: Supertex inc. DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description Very low gate threshold voltage Designed to be source-driven Low switching losses Low effective output capacitance Designed for inductive loads


    Original     		PDF DN2625 MD2130 DN2625 DSFP-DN2625 B052110 D2625

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability


    Original     		PDF VP2206 VP2206 DSFP-VP2206 D031411

    125OC

    Abstract: VF15 VN0104 VN0104N3-G VN1504NW
    Text: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input


    Original     		PDF VN0104 DSFP-VN0104 B030411 125OC VF15 VN0104 VN0104N3-G VN1504NW

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability


    Original     		PDF TN2106 DSFP-TN2106 B080913

    2406L

    Abstract: VN2406 A120109
    Text: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a


    Original     		PDF VN2406 DSFP-VN2406 A120109 2406L VN2406 A120109