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    FET DUAL GATE SOT143 Search Results

    FET DUAL GATE SOT143 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    FET DUAL GATE SOT143 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF996S

    Abstract: marking code cig dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF996S OT143 R77/02/pp8 BF996S marking code cig dual-gate

    BF992

    Abstract: bf992 application Silicon N-Channel Dual Gate MOS-FET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BF992 Silicon N-channel dual gate MOS-FET Product specification Supersedes data of 1996 Jul 30 1999 Aug 11 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET APPLICATIONS BF992 PINNING


    Original     		PDF M3D071 BF992 OT143B 125004/03/pp12 BF992 bf992 application Silicon N-Channel Dual Gate MOS-FET

    BF997

    Abstract: Dual-Gate Mosfet dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF997 OT143 BF997 Dual-Gate Mosfet dual-gate

    BF990A

    Abstract: mosfet handbook Dual-Gate Mosfet philips mosfet dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF990A OT143 BF990A mosfet handbook Dual-Gate Mosfet philips mosfet dual-gate

    BF989

    Abstract: Dual-Gate Mosfet dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF989 OT143 BF989 Dual-Gate Mosfet dual-gate

    BF989

    Abstract: MOSFET 4466 BP317 SCA52 dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF989 OT143 SCA52 117061/00/02/pp8 BF989 MOSFET 4466 BP317 SCA52 dual-gate

    BF990A

    Abstract: PHILIPS MOSFET MARKING 4814 mosfet dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF990A OT143 SCA52 117061/00/02/pp8 BF990A PHILIPS MOSFET MARKING 4814 mosfet dual-gate

    BF997

    Abstract: Philips MKP dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF997 OT143 BF997 Philips MKP dual-gate

    transistor SOT103

    Abstract: BF991 Dual-Gate Mosfet dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF991 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF991 OT143 transistor SOT103 BF991 Dual-Gate Mosfet dual-gate

    BF994S marking code

    Abstract: FET MARKING CODE Marking G2 BF994S sot143 marking code G2 Dual-Gate Mosfet dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF994S OT143 BF994S marking code FET MARKING CODE Marking G2 BF994S sot143 marking code G2 Dual-Gate Mosfet dual-gate

    BF991

    Abstract: fet MARKING g2 Marking G2 SOT-103 dual-gate sot103 transistor SOT103 mosfet
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF991 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF991 OT143 BF991 fet MARKING g2 Marking G2 SOT-103 dual-gate sot103 transistor SOT103 mosfet

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF996S OT143

    marking code cig

    Abstract: fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF996S OT143 marking code cig fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF994S N-channel dual-gate MOS-FET Product specification July 1993 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates


    Original     		PDF BF994S OT143 R77/02/pp8

    BF994S

    Abstract: dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification July 1993 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates


    Original     		PDF BF994S OT143 R77/02/pp8 BF994S dual-gate

    Sony 104A

    Abstract: No abstract text available
    Text: SGM2014M] SONY. GaAs N-channel Dual Gate MES FET Description Package Outline The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable lor a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    OCR Scan     		PDF SGM2014M] SGM2014M 900MHz at900MHz OT-143 M-254 Sony 104A

    fet dual gate sot143

    Abstract: SGM2014M
    Text: SGM2014M SONY, GaAs N-channel Dual Gate MES FET_ hor the availability of this product, please contact the sales officir] Description Package Outline Unit : mm The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is


    OCR Scan     		PDF SGM2014M SGM2014M 900MHz Ga-18dB OT-143 -64l0Â fet dual gate sot143

    MRF966

    Abstract: MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R
    Text: Order this document by MRFG9661/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9661 MRFG9661R Advance Information The RF Line N-Channel Dual-Gate GaAs Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion m ode dual-gate M E S FET designed for high frequency amplifier


    OCR Scan     		PDF MRFG9661/D MRFG9661/9661R MRFG9661/D MRF966 MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R

    motorola 304

    Abstract: MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075
    Text: Order this document by MRFG9801/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9801 MRFG9801R Advance Information The RF Line N-Channel Dual-Gate G a A s Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion mode dual-gate MES FET designed for high frequency amplifier


    OCR Scan     		PDF MRFG9801/D MRFG9801/9801R MRFG9801/D motorola 304 MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075

    BF908R

    Abstract: BF908 URC276 MRC280 BH rn transistor
    Text: ' m bbSBTBl 005355b 141 • APX Philips Semiconductors Product specification N AUER PHILIPS/DISCRETE fa?E D Dual gate MOS-FETs BF908; BF908R FEATURES QUICK REFERENCE DATA • High IY„I dual gate MOS-FET SYMBOL ■ Short channel transistor with high IYfcl : C „ ratio


    OCR Scan     		PDF 005355b BF908; BF908R OT143 OT143R CAU01 BF908R BF908 URC276 MRC280 BH rn transistor

    Untitled

    Abstract: No abstract text available
    Text: • 7110öEb D0bfi7QS m s ■PHIN BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S0T143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.


    OCR Scan     		PDF BF991 S0T143 SQT103

    Marking G1s

    Abstract: No abstract text available
    Text: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF


    OCR Scan     		PDF bbS3131 BF992R OT143R Marking G1s

    Untitled

    Abstract: No abstract text available
    Text: • APX bbSBTBl QD2M73D bT4 N AMER PHILIPS/DISCRETE BF989 b7E D J K. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television


    OCR Scan     		PDF QD2M73D BF989 OT143

    Untitled

    Abstract: No abstract text available
    Text: ' • bbS3^31 002355b 141 ■ APX Philips Semiconductors Product specification N AHER P H IL IP S /D IS C R E T E b?E D Dual gate MOS-FETs — BF908; BF908R QUICK REFERENCE DATA FEATURES SYMBOL • High IY„I dual gate MOS-FET • Short channel transistor with high


    OCR Scan     		PDF 002355b BF908; BF908R OT143 OT143R