2SC4639
Abstract: No abstract text available
Text: Ordering number : ENN7177 CPH5905 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5905 High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications unit : mm 2196 [CPH5905] 2.9 5 4 0.15 3 0.05 0.6 1.6 • Composite type with J-FET and NPN transistors
|
Original
|
ENN7177
CPH5905
CPH5905]
CPH5905
2SK3557-equivalent
2SC4639-equivalent
2SC4639
|
PDF
|
fet junction transistor
Abstract: marking rb CPH5902 ITR10364 ITR10365 ITR10367 2SC4639
Text: Ordering number : ENN6962 CPH5902 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5902 High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications [CPH5902] 2.9 5 4 0.15 3 0.05 0.6 1.6 • unit : mm 2196 0.2 • Composite type with J-FET and NPN transistors
|
Original
|
ENN6962
CPH5902
CPH5902]
CPH5902
2SK2394-equivalent
2SC4639-equivalent
fet junction transistor
marking rb
ITR10364
ITR10365
ITR10367
2SC4639
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TA75060P BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC J-FET INPUT LOW-POWER OPERATIONAL AMPLIFIER Unit in mm The TA75060P is a J-FET input low-power operational amplifier with low input bias, offset current, and a fast slew rate. The u uuu TA75060P is pin compatible with the TA7506P.
|
OCR Scan
|
TA75060P
TA75060P
TA7506P.
400pA
200pA
|
PDF
|
ta7504p
Abstract: No abstract text available
Text: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC Ifl # Ü U U II J-FET INPUT LOW-POWER OPERATIONAL AMPLIFIER Unit in mm The TA75061P is a J-FET input low-power operational amplifier with low input bias, offset current and a fast slew rate. The U CJ UITT
|
OCR Scan
|
TA75061P
TA7504P
400pA
200pA
10kii
ta7504p
|
PDF
|
aloka
Abstract: CL25 TA75064F TA75064P TA75902P ta7506 tc 5064p TA75902
Text: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75064P/F Unit in mm J-FET INPUT LOW-POWER QUAD OPERATIONAL AMPLIFIER The TA7 5064P and TA75064F are J-FET input low-power operational amplifiers with low input bias, offset current and a fast slew rate.
|
OCR Scan
|
5064P
TA75064F
TA75064P
TA75902P
400pA
200pF
10kii
10kil
aloka
CL25
ta7506
tc 5064p
TA75902
|
PDF
|
RF POWER amplifier 10 watt
Abstract: 8587 sm33 WiMax Configurations 6 pin DC power connector
Text: Model SM3338-43 3300-3800 MHz 20 Watt Linear Power Amplifier FOR WiMAX APPLICATIONS The SM3338-43 is a 3.3 to 3.8 GHz solid state GaAs FET amplifier designed for WiMAX applications. The amplifier provides 50 dB of linear gain with a P1dB of +43 dBm. The unit is designed for
|
Original
|
SM3338-43
SM3338-43
12VDC
RF POWER amplifier 10 watt
8587
sm33
WiMax Configurations
6 pin DC power connector
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75072P/F Unit in J-FET INPUT LOW-NOISE OPERATIONAL AMPLIFIER 8 5 n r-i r—i n TA75072P The TA75072P and TA75072F are J-FET input low-noise operational amplifiers with low input bias and offset current,
|
OCR Scan
|
TA75072P/F
TA75072P
TA75072P
TA75072F
TA75458P
-100pF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Model SM3437-43 3400-3700 MHz 20 Watt Linear Power Amplifier FOR WLL APPLICATIONS The SM3437-43 is a 3.4 to 3.7 GHz solid state GaAs FET amplifier designed for the Wireless Local Loop markets. The amplifier provides 50 dB of linear gain with a P1dB of +43 dBm. The unit provides ultra-linear
|
Original
|
SM3437-43
SM3437-43
12VDC
|
PDF
|
SM7985-43
Abstract: No abstract text available
Text: Model SM7985-43 7900-8500 MHz 20 Watt Linear Power Amplifier FOR COFDM APPLICATIONS The SM7177-43 is a 7.9 to 8.5 GHz solid state GaAs FET amplifier. The amplifier provides 58 dB of linear gain with a P1dB of +43 dBm. It is available in modular form standard , as a lab unit or in a 19” rack
|
Original
|
SM7985-43
SM7177-43
-16dB
12VDC
SM7985-43
|
PDF
|
SM2325-47L
Abstract: SM2325 sm2324
Text: Specification Sheet for SM2324-47L SSPA This solid state GaAs amplifier is designed for the Wireless Local Loop WLL market. The unit uses the latest FET technology with a built in linearizer allowing ultra linear performance for rigorous system requirements.
|
Original
|
SM2324-47L
SM2325-47L
com/specs/2325-47l/2325
SM2325-47L
SM2325
sm2324
|
PDF
|
SM2527-50L
Abstract: No abstract text available
Text: Specification Sheet for SM2527-50L SSPA This solid state GaAs amplifier is designed for the Multichannel Multipoint Distribution System MMDS market. The unit uses the latest FET technology with a built in linearizer allowing ultra linear performance for rigorous system
|
Original
|
SM2527-50L
SM2527-50L
com/specs/2527-50l/2527
|
PDF
|
SM2325-50L
Abstract: No abstract text available
Text: Specification Sheet for SM2325-50L SSPA This solid state GaAs amplifier is designed for the ISM/WCS/WLL markets. The unit uses the latest FET technology with a built in linearizer allowing ultra linear performance for rigorous system requirements. Features include a Single DC Supply, Over/Reverse Voltage Protection, Thermal
|
Original
|
SM2325-50L
SM2325-50L
com/specs/2325-50l/2325
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TGA8349-SCC DC TO 14-GHz AMPLIFIER AP PR O VAL 5037 1.2:1 Input VSWR, 1.3:1 Output VSWR 11-dB Small Signal Gain 16-dBm Output Power at 1-dB Gain Compression at Midband 3.1-dB Noise Figure at Midband Size: 3,4290 x 2,2860 x 0,101 mm 0.135 x 0.090x 0.004 inch
|
OCR Scan
|
TGA8349-SCC
14-GHz
11-dB
16-dBm
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WTELEDYNE COMPONENTS 1430 FAST SETTLING, FET INPUT OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION • Settling Time to ±0.01% 10V step 200 ns Max ■ Operating Temperature. -55°C to +125°C ■ Gain Bandwidth Product. 100 MHz
|
OCR Scan
|
50V/ns
200nsec
600ns.
200ns.
14304HR
|
PDF
|
|
|
GaAsTEK
Abstract: No abstract text available
Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply
|
OCR Scan
|
ITT6401D
ITT6401D
loQ-360mA
GaAsTEK
|
PDF
|
2w,GaAs FET
Abstract: ITT6401D
Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply
|
Original
|
ITT6401D
ITT6401D
360mA
2w,GaAs FET
|
PDF
|
LEMO
Abstract: FEMTO Messtechnik DLPVA-100-F DLPVA-100-F-D DLPVA-100-F-S LEMO 3-Pin LEMO 7 pin
Text: Datasheet DLPVA-100-F Series Variable Gain Low Frequency Voltage Amplifier Features Variable Gain 20 to 80 dB, Switchable in 20 dB Steps FET Input Stage, 1 TΩ Ω Impedance Protection against ± 3 kV Transients Single Ended and True Differential Input Models
|
Original
|
DLPVA-100-F
LEMO
FEMTO Messtechnik
DLPVA-100-F-D
DLPVA-100-F-S
LEMO 3-Pin
LEMO 7 pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T R I Q U I N T S E M I C TGA8035-SCC O N D U C Gain Block Amplifier ● ● ● ● ● ● 6 to 18- GHz Frequency Range T O R , I N C . 8035 13- dB Typical Gain 2.2:1 Typical Input/Output SWR 12.5- dBm Typical Output Power at 1 -dB Gain Compression 5 - dB Typical Noise Figure
|
Original
|
TGA8035-SCC
TGA8035
|
PDF
|
dss2
Abstract: TGA8035 TGA8035-SCC
Text: T R I Q U I N T S E M I C TGA8035-SCC O N D U C Gain Block Amplifier ● ● ● ● ● ● 6 to 18- GHz Frequency Range T O R , I N C . 8035 13- dB Typical Gain 2.2:1 Typical Input/Output SWR 12.5- dBm Typical Output Power at 1 -dB Gain Compression 5 - dB Typical Noise Figure
|
Original
|
TGA8035-SCC
TGA8035
dBm0710)
dss2
TGA8035-SCC
|
PDF
|
LI 803-4
Abstract: TGA8035-SCC
Text: TGA8035-SCC 6- TO 18-GHz AMPLIFIER A PP R O V AL 5026 13-dB Typical Gain 2.2:1 Typical Input/Output SWR 12.5-dBm Typical Output Power at 1-dB Gain Compression Typical Noise Figure Is 5 dB Size: 2,4892 x 2,0574 x 0,1143 mm 0.098 x 0.081 x 0.0045 in The Texas Instruments TGA8035-SCC is atwo-stage
|
OCR Scan
|
TGA8035-SCC
18-GHz
13-dB
GMGS010A9
LI 803-4
|
PDF
|
modules
Abstract: fet small signal
Text: MwT-0206S-A9G1/0206Z-A9G1 2.0 – 6.0 GHz Balanced Amplifier Module Data Sheet June 2006 Features: • 14.0 dBm P1dB • 17.0 dB Small Signal Gain • 14.0 dB Input/Output Return Loss • 50 mA @ +8V • 1.5 dB Noise Figure SMALL SIGNAL GAIN vs FREQUENCY INPUT/OUTPUT RETURN LOSS
|
Original
|
MwT-0206S-A9G1/0206Z-A9G1
modules
fet small signal
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TGA8041-XCC 6.5- TO 18-GHz POWER AMPLIFIER A PP R O V AL 5026 0.4-W Output Power at 1-dB Gain Compression 10.5-dB Typical Gain Operates From Single 8-V Supply 13% Typical Power-Added Efficiency at 1-dB Gain Compression Size: 3,6068 x 1,9304 x 0,1016 mm 0.142 x 0.076 x 0.004 inch
|
OCR Scan
|
TGA8041-XCC
18-GHz
26-dBm
TGA8041
|
PDF
|
amplifier 2606
Abstract: fet 5c TGA8349 TGA8349-SCC
Text: T R I Q U I N T S E M I TGA8349-SCC C O N D U C Gain Block Amplifier ● ● ● ● ● ● DC to 14 -GHz Frequency Range T O R , I N C . 8349 1.2:1 Input SWR, 1.3:1 Output SWR 11-dB Small Signal Gain 16-dBm Output Power at 1 -dB Gain Compression at Midband
|
Original
|
TGA8349-SCC
11-dB
16-dBm
TGA8349
11-dB
amplifier 2606
fet 5c
TGA8349-SCC
|
PDF
|
gmna002
Abstract: TGA8220-SCC TGA8300-SCC TGA8622-SCC
Text: TGA8220-SCC Power Amplifier ● ● ● ● ● ● 8220 Distributed 2 to 18-GHz Frequency Range Positive Gain Slope 26-dBm Typical Output Power at 1-dB Gain Compression 6-dB Typical Gain 1.6:1 Typical Input/Output SWR 3,327 x 1,880 x 0,152 mm 0.131 x 0.074 x 0.006 in.
|
Original
|
TGA8220-SCC
18-GHz
26-dBm
TGA8220-SCC
13-dB.
gmna002
TGA8300-SCC
TGA8622-SCC
|
PDF
|
