MOSFET 4466
Abstract: 4466 8 pin mosfet pin voltage dual sot363 BF1102 mosfet 1412 dual gate mosfet MGS365 marking code AL mosfet handbook
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specification 1999 Jul 08 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single
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MBD128
BF1102
OT363
125004/00/01/pp12
MOSFET 4466
4466 8 pin mosfet pin voltage
dual sot363
BF1102
mosfet 1412
dual gate mosfet
MGS365
marking code AL
mosfet handbook
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BF1203
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Preliminary specification 2000 May 29 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
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MBD128
BF1203
125004/00/01/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102R Dual N-channel dual gate MOS-FET Preliminary specification 2000 Jan 06 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102R PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single
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MBD128
BF1102R
115102/00/02/pp12
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philips power mosfet
Abstract: km 1667 BF1204
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification 2000 Nov 13 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
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MBD128
BF1204
613512/01/pp12
philips power mosfet
km 1667
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63 1826 0441
Abstract: ATF551M4 ATF-551M4 ATF-551M4-BLK ATF-551M4-TR1 ATF-551M4-TR2 pHEMT FET marking A
Text: ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Features Avago Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E‑pHEMT GaAs FET housed in a thin miniature leadless package.
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ATF-551M4
ATF-551M4
5989-4217EN
AV02-0924EN
63 1826 0441
ATF551M4
ATF-551M4-BLK
ATF-551M4-TR1
ATF-551M4-TR2
pHEMT FET marking A
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PNP transistor 8555
Abstract: transistor TT 2146 TL 2272 -L4 GA 88
Text: ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Avago Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E-pHEMT GaAs FET housed in a thin miniature leadless package.
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ATF-551M4
ATF-551M4
5988-9006EN
5989-4217EN
PNP transistor 8555
transistor TT 2146
TL 2272 -L4
GA 88
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Untitled
Abstract: No abstract text available
Text: ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Features Avago Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E‑pHEMT GaAs FET housed in a thin miniature leadless package.
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ATF-551M4
ATF-551M4
5989-4217EN
AV02-0924EN
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AV02-0924EN
Abstract: code v MiniPak
Text: ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Features Avago Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E‑pHEMT GaAs FET housed in a thin miniature leadless package.
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ATF-551M4
ATF-551M4
5989-4217EN
AV02-0924EN
code v MiniPak
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ATF551M4
Abstract: ATF-551M4 ATF-551M4-BLK ATF-551M4-TR1 ATF-551M4-TR2 MuR 826
Text: ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Features Avago Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E‑pHEMT GaAs FET housed in a thin miniature leadless package.
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ATF-551M4
ATF-551M4
5989-4217EN
AV02-0924EN
ATF551M4
ATF-551M4-BLK
ATF-551M4-TR1
ATF-551M4-TR2
MuR 826
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BUK9275-100A
Abstract: No abstract text available
Text: BUK9275-100A TrenchMOS logic level FET Rev. 01 — 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK9275-100A
BUK9275-100A
OT428
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BUK9275-100A
Abstract: No abstract text available
Text: BUK9275-100A TrenchMOS logic level FET Rev. 02 — 4 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK9275-100A
BUK9275-100A
OT428
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BUK9237-55A
Abstract: buk9237
Text: BUK9237-55A TrenchMOS logic level FET Rev. 01 — 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK9237-55A
BUK9237-55A
OT428
buk9237
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BUK9230-55A
Abstract: No abstract text available
Text: BUK9230-55A TrenchMOS logic level FET Rev. 02 — 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK9230-55A
BUK9230-55A
OT428
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buk987
Abstract: BUK9875-100A SC-73
Text: BUK9875-100A TrenchMOS logic level FET Rev. 01 — 30 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK9875-100A
BUK9875-100A
OT223
SC-73)
buk987
SC-73
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BUK7230-55A
Abstract: IS100
Text: BUK7230-55A TrenchMOS standard level FET Rev. 01 — 29 September 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK7230-55A
BUK7230-55A
OT428
IS100
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BUK9240-100A
Abstract: No abstract text available
Text: BUK9240-100A TrenchMOS logic level FET Rev. 01 — 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK9240-100A
BUK9240-100A
OT428
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buk7240-100a
Abstract: No abstract text available
Text: BUK7240-100A TrenchMOS standard level FET Rev. 01 — 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK7240-100A
BUK7240-100A
OT428
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BUK7219-55A
Abstract: No abstract text available
Text: BUK7219-55A TrenchMOS standard level FET Rev. 01 — 02 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK7219-55A
BUK7219-55A
OT428
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07584
Abstract: No abstract text available
Text: BUK7226-75A TrenchMOS standard level FET Rev. 01 — 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK7226-75A
BUK7226-75A
OT428
07584
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philips sc 201
Abstract: BUK98180-100A SC-73
Text: BUK98180-100A TrenchMOS logic level FET Rev. 01 — 1 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK98180-100A
BUK98180-100A
OT223
SC-73)
philips sc 201
SC-73
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BUK7275-100A
Abstract: No abstract text available
Text: BUK7275-100A TrenchMOS standard level FET Rev. 01 — 25 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK7275-100A
BUK7275-100A
OT428
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BUK7535-100A
Abstract: BUK7635-100A
Text: BUK7535-100A; BUK7635-100A TrenchMOS standard level FET Rev. 01 — 02 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
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BUK7535-100A;
BUK7635-100A
BUK7535-100A
O-220AB)
BUK7635-100A
OT404
OT404,
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Untitled
Abstract: No abstract text available
Text: BUK7277-55A TrenchMOS standard level FET Rev. 01 — 1 February 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK7277-55A
M3D300
BUK7277-55A
OT428
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WD 969
Abstract: BUK753 quick 967 esd
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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BUK7535-55
T0220AB
WD 969
BUK753
quick 967 esd
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