HIP4080 CLASS D
Abstract: AN9324 HIP4080 HIP4080A microstepping Harris Semiconductor hip4080 HIP4081 HIP4081 amplifier circuit diagram class D HIP4080IB HIP4080IP
Text: HIP4080 S E M I C O N D U C T O R 80V/2.5A Peak, High Frequency Full Bridge FET Driver December 1996 Features Description • Drives N-Channel FET Full Bridge Including High Side Chop Capability The HIP4080 is a high frequency, medium voltage Full Bridge N-Channel FET driver IC, available in 20 lead plastic SOIC and
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HIP4080
HIP4080
1-800-4-HARRIS
HIP4080 CLASS D
AN9324
HIP4080A
microstepping
Harris Semiconductor hip4080
HIP4081
HIP4081 amplifier circuit diagram class D
HIP4080IB
HIP4080IP
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XP132A01A0SR
Abstract: No abstract text available
Text: Power MOS FET ◆P-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance: 0.105Ω max ●Cellular and portable phones ●On-board power supplies ◆Ultra High-Speed Switching ●Li-ion battery systems ◆SOP-8 Package
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XP132A01A0SR
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PMF370XN
Abstract: No abstract text available
Text: PMF370XN N-channel µTrenchMOS extremely low level FET Rev. 02 — 6 December 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features
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PMF370XN
OT323
PMF370XN
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J103 transistor
Abstract: transistor c223
Text: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced
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PTFB072707FH
PTFB072707FH
b072707fh-gr1
J103 transistor
transistor c223
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Untitled
Abstract: No abstract text available
Text: Active FET Probe P6205 Data Sheet Active FET Probes for TekProbe BNC Interface The P6205 probe is part of Tektronix' line of Low Circuit Loading Signal Acquisition probes for CSA Communications Signal Analyzers , DSA (Digitizing Signal Analyzers), 11000 Series and the TDS family of
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P6205
0W-14842-1
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GaAs FET HEMT Chips
Abstract: 876 fujitsu fet general
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: hadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
FLK207XV
FCSI0598M200
GaAs FET HEMT Chips
876 fujitsu
fet general
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Untitled
Abstract: No abstract text available
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
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FLK207XV
Abstract: GaAs FET chip
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
FLK207XV
GaAs FET chip
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Untitled
Abstract: No abstract text available
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
FLK207XV
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FLK207XV
Abstract: GaAs FET HEMT Chips
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
FLK207XV
FCSI0598M200
GaAs FET HEMT Chips
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FLK207XV
Abstract: No abstract text available
Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is
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FLK207XV
FLK207XV
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BUK794R1-40BT
Abstract: 748 DIODE
Text: BUK794R1-40BT N-channel TrenchPLUS standard level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. The
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BUK794R1-40BT
BUK794R1-40BT
748 DIODE
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Untitled
Abstract: No abstract text available
Text: BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 21 May 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK663R5-30C
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Untitled
Abstract: No abstract text available
Text: BUK653R7-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 5 July 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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Untitled
Abstract: No abstract text available
Text: BUK653R7-30C N-channel TrenchMOS intermediate level FET Rev. 3 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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Fujitsu GaAs FET application note
Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was
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fcs64
magS22
angS22
Fujitsu GaAs FET application note
atc100a
FLL810
Hp 2564
FLL810IQ-3C
IMT-2000
S03A2750N1
RFP 1026 resistor
fujitsu x band amplifiers
"15 GHz" power amplifier 41dBm
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Untitled
Abstract: No abstract text available
Text: BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK663R5-30C
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Untitled
Abstract: No abstract text available
Text: BUK624R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 — 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK624R5-30C
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Untitled
Abstract: No abstract text available
Text: BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK663R5-30C
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Untitled
Abstract: No abstract text available
Text: BUK624R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 — 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK714R1-40BT
Abstract: No abstract text available
Text: BUK714R1-40BT N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. The
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BUK714R1-40BT
BUK714R1-40BT
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Untitled
Abstract: No abstract text available
Text: h i UC1714/5 UC2714/5 UC3714/5 U N IT R D D E Complementary Switch FET Drivers FEATURES DESCRIPTION • Single Input PWM and TTL Compatible • High Current Power FET Driver, 1.OA Source/2A Sink • Auxiliary Output FET Driver, 0.5A Source/1 A Sink • Time Delays Between Power and Auxiliary Outputs
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UC1714/5
UC2714/5
UC3714/5
500ns
UC1715
UDG-94016-l
UC1714
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cha 0438
Abstract: No abstract text available
Text: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET D E S C R IP T IO N The M G F 1 4 0 2 B low-rtoise GaAs FET w ith an N -ch an nel S ch o ttk y g ate is designed fo r use in S to X band am pli fiers and oscillators. Th e herm etically sealed m etalceram ic
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MGF1402B
MGF1402B
cha 0438
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Untitled
Abstract: No abstract text available
Text: L I TT ON I N D / L I T T O N SO LI D SbE D Litton • 5 5 4 4 S D D O O D G S l b ITT « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3807 Preliminary Specifications Lett Side FET Right Side FET FEATURES ■ Output Power 25 ■ 1dB Power Gain 10 dB @ 8 g h z
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D-3807
D-3807
2285C
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