pa1556ah
Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET
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O-251/-252,
O-220/-262
SC-96
SC-95
SC-96
OT-23)
D10702EJAV0PF00
pa1556ah
PA1501H
nec PA1501H
PA1556A
PA1550H
PA1556
PA1522H
uPA1712
pa1560h
2sk3326
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ISL6258
Abstract: isl6266a 48v 2.5a charger using uc3842 ISL6726 ISL6258A 40A 48v charger Schematic Diagram uc3842 battery charger schematic schematic diagram 48v ac regulator uc3842 isl6266 24v dc power supply with uc3842
Text: Intersil Power Management Solutions 2010 Product Selection Guide Inside: Battery Management Digital Power Drivers FET Drivers Hot Plug Controllers Integrated FET Switching Regulators Isolated PWM Controllers LDO / Linear Regulators ORing FET Controllers PMIC
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1-888-INTERSIL
LC-043
ISL6258
isl6266a
48v 2.5a charger using uc3842
ISL6726
ISL6258A
40A 48v charger Schematic Diagram
uc3842 battery charger schematic
schematic diagram 48v ac regulator uc3842
isl6266
24v dc power supply with uc3842
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ISL6258
Abstract: ISL6258A UC3842 smps design isl6266a schematic diagram 48v ac regulator uc3842 48v 2.5a charger using uc3842 24v dc power supply with uc3842 schematic diagram 48v dc motor speed controller schematic diagram 48v regulator uc3842 uc3842 half bridge
Text: INTERSIL SELECTION GUIDE POWER MANAGEMENT Battery Management, Digital Power, Drivers FET Drivers, Hot Plug Controllers Integrated FET, Switching Regulators Isolated PWM Controllers, LDO / Linear Regulators ORing FET Controllers, PMIC, Power Modules Power Sequencers, PWM Controllers, Voltage Monitors
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1-888-INTERSIL
LC-043
ISL6258
ISL6258A
UC3842 smps design
isl6266a
schematic diagram 48v ac regulator uc3842
48v 2.5a charger using uc3842
24v dc power supply with uc3842
schematic diagram 48v dc motor speed controller
schematic diagram 48v regulator uc3842
uc3842 half bridge
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ISL95835
Abstract: isl6258 ISL6258A ups circuit schematic diagram 1000w 1000w class d circuit diagram schematics 1000w SMPS CIRCUIT DIAGRAM ISL95831 1000W full bridge regulator 15000w power amplifier circuit diagram SCHEMATIC 12v 1000w smps
Text: INTERSIL SELECTION GUIDE POWER Battery Management, Digital Power, Drivers FET Drivers, Hot Plug Controllers Integrated FET, Switching Regulators Isolated PWM Controllers, LDO / Linear Regulators, LED Drivers ORing FET Controllers, PMIC, Power Modules Power Sequencers, PWM Controllers, Voltage Monitors
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1-888-INTERSIL
D-85737
LC-043
ISL95835
isl6258
ISL6258A
ups circuit schematic diagram 1000w
1000w class d circuit diagram schematics
1000w SMPS CIRCUIT DIAGRAM
ISL95831
1000W full bridge regulator
15000w power amplifier circuit diagram
SCHEMATIC 12v 1000w smps
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NEC k 3654
Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
NEC k 3654
gl 7445
nec k 813
nec 8725
gm 8562
5942
A 7601 0549
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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Untitled
Abstract: No abstract text available
Text: HMJ8 High Dynamic Range FET Mixer Product Features Product Description • +37 dBm IIP3 Functional Diagram The HMJ8 is a high dynamic range GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +37 dBm at an LO drive level of +18
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18-pin
JESD22-C101
1-800-WJ1-4401
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6323 GA
Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE
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NE34018
NE34018
NE34018-T1
NE34018-T2
6323 GA
transistor NEC D 882 p
D413 transistor
D2396
transistor d507
D484 transistor
D2388
transistor d528
transistor D773
d772 transistor
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JESD22-A114
Abstract: gaas fet marking A
Text: HMJ8 High Dynamic Range FET Mixer Product Features Product Description x +37 dBm IIP3 Functional Diagram The HMJ8 is a high dynamic range GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +37 dBm at an LO drive level of +18
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18-pin
JESD22-C101
1-800-WJ1-4401
JESD22-A114
gaas fet marking A
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D450 Nchannel
Abstract: C10535E NE76118 NE76118-T1 NE76118-T2 NEC 3536
Text: DATA DATA SHEET SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS NE76118 is a n-channel GaAs MES FET housed in MOLD package. in millimeters FEATURES 2.1±0.2 1.25±0.1 • Low noise figure PACKING STYLE
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NE76118
NE76118
NE76118-T1
NE76118-T2
D450 Nchannel
C10535E
NE76118-T1
NE76118-T2
NEC 3536
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Untitled
Abstract: No abstract text available
Text: PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency
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PTAC240502FC
PTAC240502FC
47-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency
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PTAC240502FC
PTAC240502FC
47-watt
H-37248-4
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NEC 7808
Abstract: gl 7808 NE6500179A NE6500179A-T1 7808 nec
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE6500179A 1 W L-BAND POWER GaAs MES FET DESCRIPTION The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 1 W of output power CW with high
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NE6500179A
NE6500179A
NE6500179A-T1
NEC 7808
gl 7808
NE6500179A-T1
7808 nec
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NE6500379A
Abstract: NE650R479A NE650R479A-T1
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power CW with high
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NE650R479A
NE650R479A
NE6500379A
NE650R479A-T1
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NE6500278
Abstract: 10NEC 2410 nec
Text: PRELIMINARY DATA SHEET_ GaAs MES FET NE6500278 2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band.
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NE6500278
NE6500278
NE6500278-E3
10NEC
2410 nec
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Untitled
Abstract: No abstract text available
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
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cd 1619 CP AUDIO
Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
cd 1619 CP AUDIO
cd 1691 cp
IC cd 1619 CP
ic HT 8970
cd 1619 CP
of cd 1619 cp
ic SL 1626
HT 25-19
5942
nec 8725
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NE850R5
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
NE850R599
CODE-99
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63000-000
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
E850R599
CODE-99
63000-000
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NEC 3536
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •
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NE76118
NE76118
NE76118-T1
NE76118-T2
NEC 3536
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063 793
Abstract: transistor v63
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain
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NE34018
NE34018
WS60-00-1
IR30-00-3
063 793
transistor v63
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NEC K 2500
Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz
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NE34018
NE34018
NE34018-T1
NE34018-T2
NEC K 2500
OLS 049
1689I
DS 4069
k 3531 transistor
6323 GA
NEC 2905
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817 CN
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz
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NE76118
E76118
NE76118-T1
NE76118-T2er
IR30-00-2
817 CN
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE650R279A 0.2 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power CW with high
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NE650R279A
NE650R279A
NE6500379A
23dBm
16dBtyp.
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