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    FET 1005 Search Results

    FET 1005 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
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    FET 1005 Price and Stock

    NXP Semiconductors LPC1768FET100,551

    IC MCU 32BIT 512KB FLSH 100TFBGA
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    DigiKey LPC1768FET100,551 Tray 3,243 1
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    Mouser Electronics LPC1768FET100,551 9,355
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    Newark LPC1768FET100,551 Bulk 3,660 1
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    LPC1768FET100,551 Bulk 223 1
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    New Advantage Corporation LPC1768FET100,551 8,580 1
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    NXP Semiconductors LPC1830FET100,551

    IC MCU 32BIT ROMLESS 100TFBGA
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    DigiKey LPC1830FET100,551 Tray 260 1
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    Mouser Electronics LPC1830FET100,551 779
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    NXP Semiconductors LPC4320FET100,551

    IC MCU 32BIT ROMLESS 100TFBGA
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    DigiKey LPC4320FET100,551 Tray 258 1
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    Avnet Americas LPC4320FET100,551 Tray 13 Weeks 260
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    Mouser Electronics LPC4320FET100,551 281
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    Rochester Electronics LPC4320FET100,551 2,090 1
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    NXP Semiconductors LPC4330FET100,551

    IC MCU 32BIT ROMLESS 100TFBGA
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    DigiKey LPC4330FET100,551 Tray 230 1
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    Avnet Americas LPC4330FET100,551 Tray 194 13 Weeks 260
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    Mouser Electronics LPC4330FET100,551 1,072
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    NXP Semiconductors LPC4310FET100,551

    IC MCU 32BIT ROMLESS 100TFBGA
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    DigiKey LPC4310FET100,551 Tray 197 1
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    Mouser Electronics LPC4310FET100,551
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    Rochester Electronics LPC4310FET100,551 271 1
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    Avnet Silica LPC4310FET100,551 15 Weeks 260
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    Flip Electronics LPC4310FET100,551 1,820
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    Find more FET 1005 price and stock on Findchips.com

    FET 1005 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA002732

    Abstract: No abstract text available
    Text: HAF1007 Silicon P Channel MOS FET Series Power Switching ADE-208-1005 Z Target sepcification 1st. Edition Dec. 2000 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate


    Original     		PDF HAF1007 ADE-208-1005 D-85622 Hitachi DSA002732

    ADE-208-1

    Abstract: HAF1007 Hitachi DSA00231
    Text: HAF1007 Silicon P Channel MOS FET Series Power Switching ADE-208-1005 Z Target sepcification 1st. Edition Dec. 2000 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate


    Original     		PDF HAF1007 ADE-208-1005 ADE-208-1 HAF1007 Hitachi DSA00231

    NEC k 3654

    Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
    Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device


    Original     		PDF NE850R599A NE850R599A CODE-99 NEC k 3654 gl 7445 nec k 813 nec 8725 gm 8562 5942 A 7601 0549

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    Untitled

    Abstract: No abstract text available
    Text: LF PA K PSMN8R0-30YL N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 01 — 17 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PDF PSMN8R0-30YL

    Untitled

    Abstract: No abstract text available
    Text: LF PA K PSMN8R0-30YL N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 2 — 16 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PDF PSMN8R0-30YL

    JMC5701

    Abstract: GPS-101-2
    Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold


    Original     		PDF PCS6106 1-877-GOLDMOS 1522-PTF JMC5701 GPS-101-2

    TRIMMER capacitor 5-60 pF

    Abstract: G200 CDS4010 gps 9725
    Text: PTF 10052 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization


    Original     		PDF 5801-PC P4917-ND P5276 1-877-GOLDMOS 1301-PTF TRIMMER capacitor 5-60 pF G200 CDS4010 gps 9725

    Untitled

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold


    Original     		PDF PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF

    JMC5701

    Abstract: Y 335
    Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold


    Original     		PDF PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF JMC5701 Y 335

    JMC5701

    Abstract: 466W capacitor 30 pf
    Text: PTF 10053 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold


    Original     		PDF P4525-ND PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF JMC5701 466W capacitor 30 pf

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device


    OCR Scan     		PDF NE850R599A NE850R599A CODE-99

    NE850R5

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device


    OCR Scan     		PDF NE850R5 NE850R599 CODE-99

    63000-000

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device


    OCR Scan     		PDF NE850R5 E850R599 CODE-99 63000-000

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:20th/Nov/02 ELETROSTATTC SENSITIVE DEVICES RD30HVF1 Silicon MOSFET Power Transistor,175MHz 30W DESCRIPTION OUTLINE DRAWING 22. 00 RD30HVF1 is a MOS FET type transistor specifically designed for


    OCR Scan     		PDF /Nov/02 RD30HVF1 175MHz RD30HVF1 l75MHz

    AD506

    Abstract: AD506SH A0506 H08B
    Text: ANALOG DEVICES High-Accuracy Low-Offset 1C FET-lnput Op Amp AD506 1.1 Scope. This specification covers the detail requirements for a FET input operational amplifier. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:


    OCR Scan     		PDF AD506 AD506SH/883B ADI-M-1000: MIL-STD-883 MR-820 MR-820 AD506 AD506SH A0506 H08B

    AD506sH

    Abstract: No abstract text available
    Text: High-Accuracy ANALOG Low-Offset 1C FET-lnput Op Amp DEVICES _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ AD506 1.1 Scope. This specification covers the detail requirements for a FET input operational amplifier. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:


    OCR Scan     		PDF AD506 AD506SH/883B ADI-M-1000: MIL-STD-883 MR-820 47jiF AD506sH

    ADI-H-1000

    Abstract: CC10P C881
    Text: High Speed, Low Drift FET Operational Amplifier ANALOG DEVICES AD380/AD381/AD382 1.1 Scope. This specification covers the device requirements for a high speed, low drift FET input operational amplifier. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:


    OCR Scan     		PDF AD380/AD381/AD382 AD380SH/883B AD381SH/883B AD382SH/883B ADI-H-1000: H-12A H-08B H-12A 20kli ADI-H-1000 CC10P C881

    C881

    Abstract: ADI-H-1000
    Text: High Speed, Low Drift FET Operational Amplifier ANALOG DEVICES AD380/AD381/AD382 1.1 Scope. This specification covers the device requirements for a high speed, low drift FET input operational amplifier. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:


    OCR Scan     		PDF AD380/AD381/AD382 AD380SH/883B AD381SH/883B AD382SH/883B ADI-H-1000: H-12A H-08B 20kft 20kil C881 ADI-H-1000

    converter DC-DC SOP-8

    Abstract: No abstract text available
    Text: HITACHI ïOP-8 Package/5.0mQ typ. On-resistance Hitachi Power MOS FET D7-L Series "SM B"* Hitachi Power MOS FET( D7-L Series): Dramatically improved efficiency for electronic equipment Applications ^ F e a tu re and Merit 3C-DC converter power supplies for laptop computers


    OCR Scan     		PDF Bangalore-560 converter DC-DC SOP-8

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    lv 5682

    Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
    Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically


    OCR Scan     		PDF RD60HUF1 RD60HUF1 lv 5682 mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 MOSFET, 3077 transistor k 2837

    transistor rf m 9860

    Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490
    Text: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for


    OCR Scan     		PDF 520MHz RD30HUF1 520MHz 25deg Jun008 RD30HUF1 transistor rf m 9860 equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490

    221A-06

    Abstract: AN569 MTP10N40E 4803 mosfet 4801 MOSFET
    Text: M O TO RO LA S E M IC O N D U C TO R T E C H N IC A L DATA Designer’s Data Sheet TM O S E -FE T ™ High Energy P o w er FET M T P 10N 40E N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to_ withstand high energy in the avalanche mode and switch efficientlyT


    OCR Scan     		PDF MTP10N40E 221A-06 AN569 4803 mosfet 4801 MOSFET