FET 1005 Search Results

FET 1005 Result Highlights (5)

Part	Manufacturer	Description
ADC1005CCJ	Rochester Electronics LLC	ADC1005 - A/D Converter
ADC1005BCJ-1	Rochester Electronics LLC	ADC1005 - A/D Converter
RJF0411JPD-00#J3	Renesas Electronics Corporation	Thermal FETs
RJF0411JPD-01#J3	Renesas Electronics Corporation	Thermal FETs
RJF0605JPV-00#Q7	Renesas Electronics Corporation	Thermal FETs

FET 1005 Price and Stock

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NXP Semiconductors LPC1768FET100,551 IC MCU 32BIT 512KB FLSH 100TFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LPC1768FET100,551	Tray	1,472		1	1 $11.5 10 $9.082 100 $8.21938 1000 $8.21938 10000 $8.21938	Buy Now
Avnet Americas	LPC1768FET100,551	Tray		13 Weeks	260	1 - 10 - 100 - 1000 $7.92993 10000 $7.73588	Buy Now
Mouser Electronics	LPC1768FET100,551		9,237			1 $11.2 10 $8.22 100 $8.22 1000 $8.21 10000 $8.21	Buy Now
Newark	LPC1768FET100,551	Bulk	223		1	1 $7.07 10 $7.07 100 $7.07 1000 $7.07 10000 $7.07	Buy Now
Avnet Silica	LPC1768FET100,551			15 Weeks	260	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip One Stop	LPC1768FET100,551	Bulk	260			1 $8.13 10 $7.96 100 $7.9 1000 $7.3 10000 $7.3	Buy Now
	LPC1768FET100,551	Tray	255			1 $10.1 10 $7.27 100 $7.1 1000 $7.09 10000 $7.09	Buy Now
EBV Elektronik	LPC1768FET100,551		260	15 Weeks	260	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	LPC1768FET100,551		73			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	LPC1768FET100,551		7,800		1	1 - 10 - 100 - 1000 $9.97 10000 $9.31	Buy Now
NXP Semiconductors LPC4330FET100,551 IC MCU 32BIT ROMLESS 100TFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LPC4330FET100,551	Tray	580		1	1 $11.25 10 $8.81 100 $7.62225 1000 $7.00979 10000 $6.85314	Buy Now
Avnet Americas	LPC4330FET100,551	Tray	194	13 Weeks	260	1 - 10 - 100 - 1000 $6.00718 10000 $5.90682	Buy Now
Mouser Electronics	LPC4330FET100,551		955			1 $10.14 10 $7.28 100 $7.28 1000 $6.83 10000 $6.55	Buy Now
Newark	LPC4330FET100,551	Bulk			260	1 - 10 - 100 - 1000 $6.83 10000 $6.83	Buy Now
Avnet Silica	LPC4330FET100,551			15 Weeks	260	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	LPC4330FET100,551			15 Weeks	260	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	LPC4330FET100,551		82			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NXP Semiconductors LPC1830FET100,551 IC MCU 32BIT ROMLESS 100TFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LPC1830FET100,551	Tray	260		1	1 $7.28 10 $5.753 100 $5.753 1000 $5.753 10000 $5.753	Buy Now
Avnet Americas	LPC1830FET100,551	Tray		13 Weeks	260	1 - 10 - 100 - 1000 $5.55005 10000 $5.41424	Buy Now
Mouser Electronics	LPC1830FET100,551					1 $7.28 10 $5.76 100 $5.76 1000 $5.75 10000 $5.75	Get Quote
Newark	LPC1830FET100,551	Bulk			260	1 - 10 - 100 - 1000 $6.26 10000 $6.26	Buy Now
Avnet Silica	LPC1830FET100,551			15 Weeks	260	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	LPC1830FET100,551			15 Weeks	260	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NXP Semiconductors LPC4320FET100,551 IC MCU 32BIT ROMLESS 100TFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LPC4320FET100,551	Tray	258		1	1 $7.48 10 $5.928 100 $5.928 1000 $5.928 10000 $5.928	Buy Now
Avnet Americas	LPC4320FET100,551	Tray		13 Weeks	260	1 - 10 - 100 - 1000 $5.83328 10000 $5.691	Buy Now
Mouser Electronics	LPC4320FET100,551		253			1 $7.48 10 $5.93 100 $5.93 1000 $5.92 10000 $5.92	Buy Now
Newark	LPC4320FET100,551	Bulk			260	1 - 10 - 100 - 1000 $6.45 10000 $6.45	Buy Now
Rochester Electronics	LPC4320FET100,551		2,090		1	1 $6.59 10 $6.59 100 $6.19 1000 $5.6 10000 $5.6	Buy Now

Avnet Silica	LPC4320FET100,551			15 Weeks	260	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	LPC4320FET100,551			15 Weeks	260	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	LPC4320FET100,551		27			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NXP Semiconductors LPC4310FET100,551 IC MCU 32BIT ROMLESS 100TFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LPC4310FET100,551	Tray	197		1	1 $7.58 10 $5.862 100 $5.02288 1000 $4.59004 10000 $4.47935	Buy Now
Avnet Americas	LPC4310FET100,551	Tray		13 Weeks	260	1 - 10 - 100 - 1000 $5.57657 10000 $5.44056	Buy Now
Mouser Electronics	LPC4310FET100,551					1 - 10 - 100 - 1000 $5.45 10000 $5.45	Get Quote
Newark	LPC4310FET100,551	Bulk			260	1 - 10 - 100 - 1000 $6.12 10000 $5.9	Buy Now
Rochester Electronics	LPC4310FET100,551		1,830		1	1 $6.3 10 $6.3 100 $5.92 1000 $5.36 10000 $5.36	Buy Now

Avnet Silica	LPC4310FET100,551			15 Weeks	260	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	LPC4310FET100,551			15 Weeks	260	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more FET 1005 price and stock on Findchips.com

FET 1005 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Hitachi DSA002732 Abstract: No abstract text available Text: HAF1007 Silicon P Channel MOS FET Series Power Switching ADE-208-1005 Z Target sepcification 1st. Edition Dec. 2000 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate	Original	HAF1007 ADE-208-1005 D-85622 Hitachi DSA002732	PDF
ADE-208-1 Abstract: HAF1007 Hitachi DSA00231 Text: HAF1007 Silicon P Channel MOS FET Series Power Switching ADE-208-1005 Z Target sepcification 1st. Edition Dec. 2000 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate	Original	HAF1007 ADE-208-1005 ADE-208-1 HAF1007 Hitachi DSA00231	PDF
NEC k 3654 Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549 Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device	Original	NE850R599A NE850R599A CODE-99 NEC k 3654 gl 7445 nec k 813 nec 8725 gm 8562 5942 A 7601 0549	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
Untitled Abstract: No abstract text available Text: LF PA K PSMN8R0-30YL N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 01 — 17 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN8R0-30YL	PDF
Untitled Abstract: No abstract text available Text: LF PA K PSMN8R0-30YL N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 2 — 16 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PSMN8R0-30YL	PDF
JMC5701 Abstract: GPS-101-2 Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold	Original	PCS6106 1-877-GOLDMOS 1522-PTF JMC5701 GPS-101-2	PDF
TRIMMER capacitor 5-60 pF Abstract: G200 CDS4010 gps 9725 Text: PTF 10052 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization	Original	5801-PC P4917-ND P5276 1-877-GOLDMOS 1301-PTF TRIMMER capacitor 5-60 pF G200 CDS4010 gps 9725	PDF
Untitled Abstract: No abstract text available Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold	Original	PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF	PDF
JMC5701 Abstract: Y 335 Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold	Original	PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF JMC5701 Y 335	PDF
JMC5701 Abstract: 466W capacitor 30 pf Text: PTF 10053 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold	Original	P4525-ND PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF JMC5701 466W capacitor 30 pf	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device	OCR Scan	NE850R599A NE850R599A CODE-99	PDF
NE850R5 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device	OCR Scan	NE850R5 NE850R599 CODE-99	PDF
63000-000 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device	OCR Scan	NE850R5 E850R599 CODE-99 63000-000	PDF

Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:20th/Nov/02 ELETROSTATTC SENSITIVE DEVICES RD30HVF1 Silicon MOSFET Power Transistor,175MHz 30W DESCRIPTION OUTLINE DRAWING 22. 00 RD30HVF1 is a MOS FET type transistor specifically designed for	OCR Scan	/Nov/02 RD30HVF1 175MHz RD30HVF1 l75MHz	PDF
AD506 Abstract: AD506SH A0506 H08B Text: ANALOG DEVICES High-Accuracy Low-Offset 1C FET-lnput Op Amp AD506 1.1 Scope. This specification covers the detail requirements for a FET input operational amplifier. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:	OCR Scan	AD506 AD506SH/883B ADI-M-1000: MIL-STD-883 MR-820 MR-820 AD506 AD506SH A0506 H08B	PDF
AD506sH Abstract: No abstract text available Text: High-Accuracy ANALOG Low-Offset 1C FET-lnput Op Amp DEVICES _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ AD506 1.1 Scope. This specification covers the detail requirements for a FET input operational amplifier. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:	OCR Scan	AD506 AD506SH/883B ADI-M-1000: MIL-STD-883 MR-820 47jiF AD506sH	PDF
ADI-H-1000 Abstract: CC10P C881 Text: High Speed, Low Drift FET Operational Amplifier ANALOG DEVICES AD380/AD381/AD382 1.1 Scope. This specification covers the device requirements for a high speed, low drift FET input operational amplifier. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:	OCR Scan	AD380/AD381/AD382 AD380SH/883B AD381SH/883B AD382SH/883B ADI-H-1000: H-12A H-08B H-12A 20kli ADI-H-1000 CC10P C881	PDF
C881 Abstract: ADI-H-1000 Text: High Speed, Low Drift FET Operational Amplifier ANALOG DEVICES AD380/AD381/AD382 1.1 Scope. This specification covers the device requirements for a high speed, low drift FET input operational amplifier. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:	OCR Scan	AD380/AD381/AD382 AD380SH/883B AD381SH/883B AD382SH/883B ADI-H-1000: H-12A H-08B 20kft 20kil C881 ADI-H-1000	PDF
converter DC-DC SOP-8 Abstract: No abstract text available Text: HITACHI ïOP-8 Package/5.0mQ typ. On-resistance Hitachi Power MOS FET D7-L Series "SM B"* Hitachi Power MOS FET( D7-L Series): Dramatically improved efficiency for electronic equipment Applications ^ F e a tu re and Merit 3C-DC converter power supplies for laptop computers	OCR Scan	Bangalore-560 converter DC-DC SOP-8	PDF
APC UPS es 500 CIRCUIT DIAGRAM Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.	OCR Scan	ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212	PDF
lv 5682 Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837 Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically	OCR Scan	RD60HUF1 RD60HUF1 lv 5682 mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 MOSFET, 3077 transistor k 2837	PDF
transistor rf m 9860 Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490 Text: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for	OCR Scan	520MHz RD30HUF1 520MHz 25deg Jun008 RD30HUF1 transistor rf m 9860 equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490	PDF
221A-06 Abstract: AN569 MTP10N40E 4803 mosfet 4801 MOSFET Text: M O TO RO LA S E M IC O N D U C TO R T E C H N IC A L DATA Designer’s Data Sheet TM O S E -FE T ™ High Energy P o w er FET M T P 10N 40E N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to_ withstand high energy in the avalanche mode and switch efficientlyT	OCR Scan	MTP10N40E 221A-06 AN569 4803 mosfet 4801 MOSFET	PDF

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FET 1005 Search Results

FET 1005 Result Highlights (5)

FET 1005 Price and Stock

NXP Semiconductors LPC1768FET100,551

NXP Semiconductors LPC4330FET100,551

NXP Semiconductors LPC1830FET100,551

NXP Semiconductors LPC4320FET100,551

NXP Semiconductors LPC4310FET100,551

FET 1005 Datasheets Context Search

Hitachi DSA002732

ADE-208-1

NEC k 3654

rjp3053

Untitled

Untitled

JMC5701

TRIMMER capacitor 5-60 pF

Untitled

JMC5701

JMC5701

Untitled

NE850R5

63000-000

Untitled

AD506

AD506sH

ADI-H-1000

C881

converter DC-DC SOP-8

APC UPS es 500 CIRCUIT DIAGRAM

lv 5682

transistor rf m 9860

221A-06