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    FDU8882 Price and Stock

    Fairchild Semiconductor Corporation FDU8882

    35A, 30V, 0.015ohm, N-Channel Power MOSFET, TO-251AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDU8882 518 1
    • 1 $0.5308
    • 10 $0.5308
    • 100 $0.499
    • 1000 $0.4512
    • 10000 $0.4512
    Buy Now

    FDU8882 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDU8882 Fairchild Semiconductor N-Channel PowerTrench MOSFET Original PDF
    FDU8882 Fairchild Semiconductor 30V N-Channel PowerTrench MOSFET Original PDF
    FDU8882_NL Fairchild Semiconductor 30V N-Channel PowerTrench MOSFET Original PDF

    FDU8882 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDD8882 / FDU8882 N-Channel PowerTrench MOSFET 30V, 55A, 11.5mΩ Features General Description ! rDS ON = 11.5mΩ, VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM


    Original
    PDF FDD8882 FDU8882 O-252 O-252) FDD8882/FDU8882

    Untitled

    Abstract: No abstract text available
    Text: April 2008 FDD8882 / FDU8882 N-Channel PowerTrench MOSFET 30V, 55A, 11.5mΩ tm Features General Description  rDS ON = 11.5mΩ, VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using


    Original
    PDF FDD8882 FDU8882 O-252 O-252) FDD8882/FDU8882

    KP240

    Abstract: FDD8882 FDU8882 68e4
    Text: April 2008 FDD8882 / FDU8882 N-Channel PowerTrench MOSFET 30V, 55A, 11.5mΩ tm Features General Description ! rDS ON = 11.5mΩ, VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using


    Original
    PDF FDD8882 FDU8882 O-252 O-252) FDD888ifications FDD8882/FDU8882 KP240 FDU8882 68e4

    Untitled

    Abstract: No abstract text available
    Text: FDD8882 / FDU8882 N-Channel PowerTrench MOSFET 30V, 55A, 11mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM


    Original
    PDF FDD8882 FDU8882 O-251AA) O-252 O-252)

    FDD8882

    Abstract: FDU8882
    Text: FDD8882 / FDU8882 N-Channel PowerTrench MOSFET 30V, 55A, 11.5mΩ Features General Description ! rDS ON = 11.5mΩ, VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM


    Original
    PDF FDD8882 FDU8882 O-252 O-252) FDD8882/FDU8882 O-251AA FDU8882

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original
    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696