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    Abstract: No abstract text available
    Text: TM UniFET-II FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5 Features Description • RDS on = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A • Low Gate Charge (Typ. 9nC) These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe,


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    FDP5N50NZ

    Abstract: FDPF5N50NZ mosfet 500V 45A FDPF5N50NZT
    Text: TM UniFET-II FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5 Features Description • RDS on = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe,


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    PDF FDP5N50NZ FDPF5N50NZ FDPF5N50NZ mosfet 500V 45A FDPF5N50NZT