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    FDPF5N50NZF

    Abstract: No abstract text available
    Text: UniFET-IITM FDP5N50NZF / FDPF5N50NZF tm N-Channel MOSFET 500V, 4.2A, 1.75 Features Description • RDS on = 1.57 ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZF FDPF5N50NZF FDPF5N50NZF

    FDPF5N50NZF

    Abstract: No abstract text available
    Text: UniFET-II TM FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET 500V, 4.2A, 1.75Ω Features Description • RDS on = 1.57Ω ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZF FDPF5N50NZF FDPF5N50NZF

    Untitled

    Abstract: No abstract text available
    Text: UniFET-II TM FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET 500V, 4.2A, 1.75Ω Features Description • RDS on = 1.57Ω ( Typ.)@ VGS = 10V, ID = 2.1A • Low Gate Charge ( Typ. 9nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZF FDPF5N50NZF