FDP46N30 Search Results

FDP46N30 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FDP46N30		Fairchild Semiconductor	300v N-channel Mosfet		Original	PDF

FDP46N30 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FDP46N30 Abstract: MOSFET 300V N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V Text: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)	Original	FDP46N30 O-220 FDP46N30 MOSFET 300V N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V	PDF
Untitled Abstract: No abstract text available Text: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)	Original	FDP46N30 FDP46N30	PDF

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FDP46N30

Abstract: MOSFET 300V N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Text: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)

Original

FDP46N30 O-220 FDP46N30 MOSFET 300V N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V

PDF

Untitled

Abstract: No abstract text available
Text: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)