Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FDP053N08B Search Results

    SF Impression Pixel

    FDP053N08B Price and Stock

    onsemi FDP053N08B-F102

    MOSFETs Smart Power Module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FDP053N08B-F102 950
    • 1 $2.14
    • 10 $1.73
    • 100 $1.27
    • 1000 $0.877
    • 10000 $0.875
    Buy Now
    Onlinecomponents.com FDP053N08B-F102
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.961
    • 10000 $0.961
    Buy Now

    FDP053N08B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDP053N08B_F102 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSF N CH 80V 75A TO-220 Original PDF
    FDP053N08B-F102 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 75A TO-220 Original PDF

    FDP053N08B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDP053N08B

    Abstract: No abstract text available
    Text: FDP053N08B N-Channel PowerTrench MOSFET 80 V, 120 A, 5.3 mΩ Features Description • RDS on = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original
    PDF FDP053N08B FDP053N08B

    FDP053N08B

    Abstract: No abstract text available
    Text: FDP053N08B_F102 N-Channel PowerTrench MOSFET 80V, 120A, 5.3mW Features Description • RDS on = 4.2mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    PDF

    fdp053

    Abstract: FDP053N08B 4480 Mosfet
    Text: FDP053N08B_F102 N-Channel PowerTrench MOSFET 80 V, 120 A, 5.3 mΩ Features Description • RDS on = 4.2 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A • Low Reverse Recovery Charge, Qrr = 62.5 nC This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP053N08B N-Channel PowerTrench MOSFET 80 V, 120 A, 5.3 mΩ Features Description • RDS on = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original
    PDF FDP053N08B