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    onsemi FDP036N10A

    Trans MOSFET N-CH 100V 214A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP036N10A)
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    Avnet Americas FDP036N10A Tube 10 Weeks 50
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    Mouser Electronics FDP036N10A 435
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    Verical FDP036N10A 800 800
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    FDP036N10A 125 3
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    FDP036N10A 125 10 Weeks 1
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    Newark FDP036N10A Bulk 774 1
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    Onlinecomponents.com FDP036N10A
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    Richardson RFPD FDP036N10A 800
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    New Advantage Corporation FDP036N10A 550 1
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    Fairchild Semiconductor Corporation FDP036N10A

    Power Field-Effect Transistor, 120A, 100V, 0.0036ohm, N-Channel, MOSFET, TO-220AB
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    Rochester Electronics FDP036N10A 7 1
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    ComSIT USA FDP036N10A 275
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    FDP036N10 Datasheets (1)

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    FDP036N10A Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-220AB-3 Original PDF

    FDP036N10 Datasheets Context Search

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    FDP036N10A

    Abstract: fdp036n10 FDP036N0A 47w marking fdp036
    Text: FDP036N10A N-Channel PowerTrench MOSFET 100V, 176A, 3.6mW Features Description • RDS on = 3.2mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP036N10A O-220AB FDP036N10A fdp036n10 FDP036N0A 47w marking fdp036 PDF

    fdp036n10a

    Abstract: No abstract text available
    Text: FDP036N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.6 mΩ Features Description • RDS on = 3.2 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching


    Original     		FDP036N10A FDP036N10A PDF

    FDP036N0A

    Abstract: FDP036N10A
    Text: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 176A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP036N10A O-220AB FDP036N0A FDP036N10A PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 214A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP036N10A FDP036N10A O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 214A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP036N10A O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP036N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.6 mΩ Features Description • RDS on = 3.2 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original     		FDP036N10A PDF