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    FDMS030N06B Search Results

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    FDMS030N06B Price and Stock

    onsemi FDMS030N06B

    MOSFET N-CH 60V 22.1A/100A 8PQFN
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    DigiKey FDMS030N06B Reel 3,000 3,000
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    FDMS030N06B Cut Tape 2,140 1
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    FDMS030N06B Digi-Reel 1
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    Avnet Americas FDMS030N06B Reel 4 Weeks 197
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    FDMS030N06B Reel 14 Weeks 3,000
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    Mouser Electronics FDMS030N06B 9,812
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    Newark FDMS030N06B Cut Tape 985 1
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    FDMS030N06B Reel 3,000
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    Future Electronics FDMS030N06B Reel 14 Weeks 3,000
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    Onlinecomponents.com FDMS030N06B
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    Rochester Electronics FDMS030N06B 1,866 1
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    TME FDMS030N06B 1
    • 1 $2.95
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    • 100 $2.1
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    Richardson RFPD FDMS030N06B 3,000
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    Avnet Asia FDMS030N06B 14 Weeks 3,000
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    Avnet Silica FDMS030N06B 15 Weeks 3,000
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    EBV Elektronik FDMS030N06B 16 Weeks 3,000
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    FDMS030N06B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDMS030N06B Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSF N CH 60V 22.1A POWER56 Original PDF

    FDMS030N06B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDMS030N06B N-Channel PowerTrench MOSFET 60 V, 100 A, 3 mΩ Features Description • RDS on = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Fast Switching Speed This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has


    Original     		PDF FDMS030N06B

    MOTOR DRIVER 48v 50A

    Abstract: ISD 1720
    Text: FDMS030N06B N-Channel PowerTrench MOSFET 60V, 100A, 3m Features Description • RDS on = 2.4m (Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDMS030N06B FDMS030N06B MOTOR DRIVER 48v 50A ISD 1720

    Untitled

    Abstract: No abstract text available
    Text: FDMS030N06B N-Channel PowerTrench MOSFET 60 V, 100 A, 3 mΩ Features Description • RDS on = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDMS030N06B FDMS030N06B