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    MOSFETs NCh40V100A,1.5m ohms PowerTrench MOSFET
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    FDMS015N04B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDMS015N04B Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 31.3A 8-PQFN Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: FDMS015N04B N-Channel PowerTrench MOSFET 40 V, 100 A, 1.5 mΩ Features Description • RDS on = 1.13 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDMS015N04B

    Untitled

    Abstract: No abstract text available
    Text: FDMS015N04B N-Channel PowerTrench MOSFET 40 V, 100 A, 1.5 mΩ Features Description • RDS on = 1.13 mΩ (Typ.)@ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDMS015N04B FDMS015N04B

    N_CHANNEL MOSFET 100V MOSFET

    Abstract: No abstract text available
    Text: FDMS015N04B N-Channel PowerTrench MOSFET 40V, 100A, 1.5mW Features Description • RDS on = 1.13mW (Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDMS015N04B FDMS015N04B N_CHANNEL MOSFET 100V MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FDMS015N04B N-Channel PowerTrench MOSFET 40V, 100A, 1.5mW Features Description • RDS on = 1.13mW (Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDMS015N04B