FDMC86102Z
Abstract: FDMC86102LZ
Text: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process
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FDMC86102LZ
FDMC86102LZ
FDMC86102Z
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Untitled
Abstract: No abstract text available
Text: FDMC86102LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 22 A, 24 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has
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FDMC86102LZ
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process
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FDMC86102LZ
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FDMC86102L
Abstract: No abstract text available
Text: FDMC86102LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 22 A, 24 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has
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Original
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FDMC86102LZ
FDMC86102L
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PDF
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FDMC86102L
Abstract: No abstract text available
Text: FDMC86102LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 22 A, 24 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has
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Original
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FDMC86102LZ
FDMC86102L
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PDF
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