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    FDMC7572S Search Results

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    FDMC7572S Price and Stock

    Rochester Electronics LLC FDMC7572S

    POWER FIELD-EFFECT TRANSISTOR, 2
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    DigiKey FDMC7572S Bulk 2,608 245
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    • 1000 $1.23
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    onsemi FDMC7572S

    MOSFET N-CH 25V 22.5A/40A PWR33
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    DigiKey FDMC7572S Cut Tape 1
    • 1 $2.41
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    • 100 $2.41
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    FDMC7572S Digi-Reel 1
    • 1 $2.41
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    FDMC7572S Reel
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    Newark FDMC7572S Reel 3,000
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    FDMC7572S Cut Tape 3,000
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    Bristol Electronics FDMC7572S 4,792
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    Rochester Electronics FDMC7572S 2,608 1
    • 1 $1.24
    • 10 $1.24
    • 100 $1.17
    • 1000 $1.05
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    Fairchild Semiconductor Corporation FDMC7572S

    Power Field-Effect Transistor, 22.5A, 25V, 0.00315ohm, N-Channel, MOSFET, MO-240BA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDMC7572S 20,766 1
    • 1 $1.24
    • 10 $1.24
    • 100 $1.17
    • 1000 $1.05
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    FDMC7572S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDMC7572S Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 40A POWER33 Original PDF

    FDMC7572S Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDMC7572S N-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 mΩ Features General Description „ Max rDS on = 3.15 mΩ at VGS = 10 V, ID = 22.5 A The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMC7572S FDMC7572S

    Untitled

    Abstract: No abstract text available
    Text: FDMC7572S N-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 mΩ Features General Description ̈ Max rDS on = 3.15 mΩ at VGS = 10 V, ID = 22.5 A The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMC7572S FDMC7572S

    FDMC7572S

    Abstract: BY 225 diode
    Text: FDMC7572S N-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 mΩ Features General Description „ Max rDS on = 3.15 mΩ at VGS = 10 V, ID = 22.5 A The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMC7572S FDMC7572S BY 225 diode