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    FDMA8884 Price and Stock

    Flip Electronics FDMA8884

    30V SINGLE N-CHANNEL POWERTRENCH
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    DigiKey FDMA8884 Reel 547,975 3,000
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    Rochester Electronics LLC FDMA8884

    SMALL SIGNAL FIELD-EFFECT TRANSI
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    DigiKey FDMA8884 Bulk 424,190 1,032
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    onsemi FDMA8884

    MOSFET N-CH 30V 6.5/8A 6MICROFET
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    DigiKey FDMA8884 Reel
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    Avnet Americas FDMA8884 Reel 0 Weeks, 2 Days 2,942
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    FDMA8884 Reel 4 Weeks 1,242
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    Newark FDMA8884 Reel 3,000
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    Flip Electronics FDMA8884 547,975
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    Fairchild Semiconductor Corporation FDMA8884

    Small Signal Field-Effect Transistor, 6.5A, 30V, N-Channel, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDMA8884 424,788 1
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    FDMA8884 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDMA8884 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 6-MLP 2X2 Original PDF

    FDMA8884 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDMA8884 Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original
    PDF FDMA8884

    Untitled

    Abstract: No abstract text available
    Text: FDMA8884 Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original
    PDF FDMA8884

    Untitled

    Abstract: No abstract text available
    Text: FDMA8884 Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original
    PDF FDMA8884

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original
    PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    Untitled

    Abstract: No abstract text available
    Text: Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original
    PDF FDMA8884 FDMA8884

    8884 mosfet

    Abstract: No abstract text available
    Text: Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original
    PDF FDMA8884 FDMA8884 8884 mosfet

    Untitled

    Abstract: No abstract text available
    Text: Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description ̈ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original
    PDF FDMA8884 FDMA8884