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    FDD86 Price and Stock

    onsemi FDD86252

    MOSFET N-CH 150V 5A/27A DPAK
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    DigiKey FDD86252 Reel 60,000 2,500
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    FDD86252 Cut Tape 1,952 1
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    Mouser Electronics FDD86252 40,883
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    FDD86252 2,500 20 Weeks 2,500
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    onsemi FDD86540

    MOSFET N-CH 60V 21.5A/50A DPAK
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    DigiKey FDD86540 Reel 15,000 2,500
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    FDD86540 Cut Tape 1,609 1
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    Avnet Americas FDD86540 Reel 12,500 20 Weeks 2,500
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    Mouser Electronics FDD86540 27,916
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    Verical FDD86540 2,106 6
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    onsemi FDD86381-F085

    MOSFET N-CH 80V 25A DPAK
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    DigiKey FDD86381-F085 Reel 12,500 2,500
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    FDD86381-F085 Cut Tape 3,030 1
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    Mouser Electronics FDD86381-F085 13,395
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    onsemi FDD86369

    MOSFET N-CH 80V 90A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDD86369 Reel 10,000 2,500
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    onsemi FDD8647L

    MOSFET N-CH 40V 14A/42A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDD8647L Reel 7,500 2,500
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    FDD8647L Cut Tape 2,589 1
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    Find more FDD86 price and stock on Findchips.com

    FDD86 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDD86081-F085 onsemi MOSFET N-CH 100V 21A TO252-3 Original PDF
    FDD86102 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A DPAK Original PDF
    FDD86102LZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A DPAK Original PDF
    FDD86110 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 12.5A DPAK-3 Original PDF
    FDD86113LZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4.2A DPAK-3 Original PDF
    FDD86250 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 8A DPAK Original PDF
    FDD86250-F085 ON Semiconductor Uncategorized - Miscellaneous - NMOS DPAK 150V 22 MOHM Original PDF
    FDD86252 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 5A DPAK Original PDF
    FDD86326 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V TRENCH DPAK Original PDF
    FDD86367 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 80V 100A TO252 Original PDF
    FDD86367-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 100A DPAK Original PDF
    FDD86369 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 80V 90A TO252 Original PDF
    FDD86369-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 90A DPAK Original PDF
    FDD86380-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 50A DPAK Original PDF
    FDD86381-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 25A DPAK Original PDF
    FDD8647L Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 14A DPAK Original PDF
    FDD86540 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 50A DPAK-3 Original PDF
    FDD86567-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 100A DPAK Original PDF
    FDD86569-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 90A DPAK Original PDF
    FDD86580-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 50A DPAK Original PDF

    FDD86 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDD86

    Abstract: No abstract text available
    Text: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		PDF FDD86113LZ FDD86113LZ FDD86

    Untitled

    Abstract: No abstract text available
    Text: FDD86252 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDD86252

    Untitled

    Abstract: No abstract text available
    Text: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		PDF FDD86102

    Untitled

    Abstract: No abstract text available
    Text: FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m: Features „ Max rDS on = 23 m: at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD86326 O-252)

    FDD86540

    Abstract: FDD86
    Text: FDD86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		PDF FDD86540 FDD86540 FDD86

    fdd86102

    Abstract: OC204
    Text: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD86102 -PA52 fdd86102 OC204

    Untitled

    Abstract: No abstract text available
    Text: FDD86250 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 50 A, 22 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDD86250

    fdd86102

    Abstract: No abstract text available
    Text: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m: Features General Description „ Max rDS on = 24 m: at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		PDF FDD86102 FDD86102

    FDD86326

    Abstract: FDD86
    Text: FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m: Features „ Max rDS on = 23 m: at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD86326 O-252) FDD86326 FDD86

    FDD86

    Abstract: FDD86110
    Text: FDD86110 N-Channel PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDD86110 FDD86110 FDD86

    Untitled

    Abstract: No abstract text available
    Text: FDD86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		PDF FDD86540

    FDD86110

    Abstract: No abstract text available
    Text: FDD86110 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDD86110 FDD86110

    Untitled

    Abstract: No abstract text available
    Text: FDD86113LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has


    Original     		PDF FDD86113LZ

    FDD86102

    Abstract: No abstract text available
    Text: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD86102 FDD86102

    Untitled

    Abstract: No abstract text available
    Text: FDD8647L N-Channel PowerTrench MOSFET 40 V, 42 A, 9 mΩ Features General Description ̈ Fast Switching This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS on and optimized BVDSS capability to offer


    Original     		PDF FDD8647L -PA52 FDD8647L

    Untitled

    Abstract: No abstract text available
    Text: FDD86326 N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m: Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDD86326

    fdd86250

    Abstract: FDD86
    Text: FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 mΩ Features General Description „ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDD86250 FDD86250 FDD86

    FDD8647L

    Abstract: FDD86
    Text: FDD8647L N-Channel PowerTrench MOSFET 40 V, 42 A, 9 mΩ Features General Description „ Fast Switching This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS on and optimized BVDSS capability to offer


    Original     		PDF FDD8647L -PA52 FDD8647L FDD86

    Untitled

    Abstract: No abstract text available
    Text: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description ̈ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		PDF FDD86113LZ

    Untitled

    Abstract: No abstract text available
    Text: FDD86102 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDD86102

    fairchild 741

    Abstract: FDD86252 FDD86
    Text: FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDD86252 FDD86252 fairchild 741 FDD86

    FDD86102

    Abstract: FDD86
    Text: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS on , switching performance and ruggedness.


    Original     		PDF FDD86102 FDD86102 FDD86

    FDD86110

    Abstract: No abstract text available
    Text: FDD86110 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDD86110 FDD86110

    Untitled

    Abstract: No abstract text available
    Text: FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDD86252 FDD86252