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    FDD5N50TM Search Results

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    FDD5N50TM Price and Stock

    Rochester Electronics LLC FDD5N50TM

    4A, 500V, 1.4OHM, N-CHANNEL POWE
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    DigiKey FDD5N50TM Bulk
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    Flip Electronics FDD5N50TM-WS

    N-CHANNEL UNIFETTM MOSFET 500V,
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    DigiKey FDD5N50TM-WS Reel
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    FDD5N50TM-WS Reel 2,000
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    onsemi FDD5N50TM-WS

    MOSFET N-CH 500V 4A DPAK
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    DigiKey FDD5N50TM-WS Cut Tape
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    FDD5N50TM-WS Digi-Reel 1
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    FDD5N50TM-WS Reel
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    Avnet Americas FDD5N50TM-WS Reel 0 Weeks, 2 Days 1,786
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    Newark FDD5N50TM-WS Reel 2,500
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    Rochester Electronics FDD5N50TM-WS 10,000 1
    • 1 $0.3953
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    Flip Electronics FDD5N50TM-WS 17,350
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    Fairchild Semiconductor Corporation FDD5N50TM

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    Bristol Electronics FDD5N50TM 1,218
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    Rochester Electronics FDD5N50TM 2,984 1
    • 1 $0.3142
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    • 100 $0.2953
    • 1000 $0.2671
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    FDD5N50TM Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD5N50TM_WS Fairchild Semiconductor 500V N-Channel MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel Original PDF
    FDD5N50TM-WS ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 4A DPAK Original PDF

    FDD5N50TM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDD5N50 N-Channel UniFETTM MOSFET 500 V, 4 A, 1.4 Ω Features Description • RDS on = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDD5N50

    FDD5N50TM

    Abstract: FDD5N50 FDD5N50TF ULTRA FAST diode 400v 5a
    Text: UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD5N50 FDD5N50 FDD5N50TM FDD5N50TF ULTRA FAST diode 400v 5a

    MOSFET 500V 5A

    Abstract: No abstract text available
    Text: UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD5N50 FDD5N50 MOSFET 500V 5A

    FDD5N50

    Abstract: No abstract text available
    Text: FDD5N50 N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.4  Features Description • RDS on = 1.15  (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDD5N50 FDD5N50