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    onsemi FDB110N15A

    MOSFET N-CH 150V 92A D2PAK
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    Ameya Holding Limited FDB110N15A 1,353
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    Richardson RFPD FDB110N15A 800
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    Fairchild Semiconductor Corporation FDB110N15A

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    Bristol Electronics FDB110N15A 351
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    Win Source Electronics FDB110N15A 59,400
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    Freescale Semiconductor FDB110N15A

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    Quest Components FDB110N15A 280
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    FDB110N15A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDB110N15A Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 92A D2PAK Original PDF

    FDB110N15A Datasheets Context Search

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    FDB110N15A

    Abstract: No abstract text available
    Text: FDB110N15A N-Channel PowerTrench MOSFET 150 V, 92 A, 11 mΩ Features Description • RDS on = 9.25 mΩ ( Typ.) @ VGS = 10 V, ID = 92 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDB110N15A FDB110N15A

    Untitled

    Abstract: No abstract text available
    Text: FDB110N15A N-Channel PowerTrench MOSFET 150 V, 92 A, 11 mΩ Features Description • RDS on = 9.25 mΩ (Typ.) @ VGS = 10 V, ID = 92 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDB110N15A

    Untitled

    Abstract: No abstract text available
    Text: FDB110N15A N-Channel PowerTrench MOSFET 150V, 92A, 11mW Features Description • RDS on = 9.25mW ( Typ.)@ VGS = 10V, ID = 92A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDB110N15A FDB110N15A