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    FDB024N04AL7 Price and Stock

    Rochester Electronics LLC FDB024N04AL7

    MOSFET N-CH 40V 100A TO263-7
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    DigiKey FDB024N04AL7 Bulk 28,800 105
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    Flip Electronics FDB024N04AL7

    MOSFET N-CH 40V D2PAK-7
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    DigiKey FDB024N04AL7 Reel 250
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    onsemi FDB024N04AL7

    MOSFET N-CH 40V 100A TO263-7
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    Avnet Americas FDB024N04AL7 Reel 0 Weeks, 2 Days 291
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    Fairchild Semiconductor Corporation FDB024N04AL7

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    Bristol Electronics FDB024N04AL7 789
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    Rochester Electronics FDB024N04AL7 28,800 1
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    FDB024N04AL7 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDB024N04AL7 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V D2PAK-7 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: FDB024N04AL7 N-Channel PowerTrench MOSFET 40 V, 219 A, 2.4 mΩ Features Description • RDS on = 2.0 m Ω (Typ.)@ VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance PowerTrench ® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDB024N04AL7

    Untitled

    Abstract: No abstract text available
    Text: FDB024N04AL7 N-Channel PowerTrench MOSFET 40V, 219A, 2.4mW Features Description • RDS on = 2.0mW ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been • Fast Switching Speed


    Original     		PDF FDB024N04AL7 FDB024N04AL7

    d2pak-7

    Abstract: FDB024N04AL7
    Text: FDB024N04AL7 N-Channel PowerTrench MOSFET 40V, 219A, 2.4mΩ Features Description • RDS on = 2.0mΩ ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been • Fast Switching Speed


    Original     		PDF FDB024N04AL7 25oliMAXTM d2pak-7 FDB024N04AL7