1000uC
Abstract: application FULL WAVE RECTIFIER FD1000FH-56 S10-27 high power rectification diodes
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FH-56 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FH-56 Dimensions in mm R4 15° 5 9 φ 50 TYPE NAME ANODE 0.4 MIN 21 ± 0.5 CATHODE ● IF AV Average forward current .1000A
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FD1000FH-56
1000uC
application FULL WAVE RECTIFIER
FD1000FH-56
S10-27
high power rectification diodes
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FH-56 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FH-56 Dimensions in mm R4 15° 5 9 φ 50 TYPE NAME ANODE 0.4 MIN 21 ± 0.5 CATHODE ● IF AV Average forward current .1000A
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FD1000FH-56
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press-pack
Abstract: press pack mitsubishi thyristors 30 kv diode
Text: MITSUBISHI HIGH POWER SEMICONDUCTORS SELECTION GUIDE BY FUNCTION 1. High-frequency rectifier diodes Voltage rating kv Current∗ rating(A) 0.1 0.5 1.0 1.5 2.0 2.5 3.0 800 3.5 4.0 4.5 5.0 5.5 6.0 FD1000FX Press pack type FD1000FV Press pack type FD1000FH 1000
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FD1000FX
FD1000FV
FD1000FH
FD1500AV
FD2000DU
FD500JV
FD1500BV
FG4000GX
FG6000AU
FG4000EX
press-pack
press pack
mitsubishi thyristors
30 kv diode
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FD1000FH-56
Abstract: BP18-J
Text: 三菱半導体〈高速スイッチング用整流ダイオード〉 FD1000FH-56 大電力高周波用 平形 FD1000FH-56 外形図 単位：mm 9 0.4 min 15° 5 R4 f 50 21 ± 0.5 陰極 0.4 min 形名 f 50 ¡IF AV 平均順電流 …………………………… 1000A
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FD1000FH-56
1000mC
180Tf
60Hz1
1000AdiF/dt
FD1000FH-56
BP18-J
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FT500BH
Abstract: transistor D313 FG1000AH transistor PNP A124 FD500DH FG600AH CR300FX GTO gate drive unit mitsubishi transistor pnp a111 SR252AM-40S
Text: 三菱 大電力半導体／スタック編 三菱半導体〈大電力半導体〉 品種一覧表 形 名 •一般用整流ダイオード SR60L-10S, SR60L-10R SR100L-10S, SR100L-10R SR130L-10S, SR130L-10R SR150L-10S, SR150L-10R SR170L-10S, SR170L-10R
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SR60L-10S,
SR60L-10R
SR100L-10S,
SR100L-10R
SR130L-10S,
SR130L-10R
SR150L-10S,
SR150L-10R
SR170L-10S,
SR170L-10R
FT500BH
transistor D313
FG1000AH
transistor PNP A124
FD500DH
FG600AH
CR300FX
GTO gate drive unit mitsubishi
transistor pnp a111
SR252AM-40S
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PS51259-AP
Abstract: induction heating cooker IGBT MOTOR CONTROL RM250HA-10F induction cooker free circuit diagram rm30tna-h PS5 1020 CM400E4G-130H pwm INVERTER welder rm450ha-5h
Text: Power Devices General Catalog The search for state-of-the-art technology has landed on energy-savings and environmental protection. Mitsubishi Power Devices meets demands for energy-saving and eco-friendly semiconductors with advanced technology and a diversified product lineup. Industrial use,
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24P2Q
16pin
225mil
16P4X
300mil
PS51259-AP
induction heating cooker
IGBT MOTOR CONTROL
RM250HA-10F
induction cooker free circuit diagram
rm30tna-h
PS5 1020
CM400E4G-130H
pwm INVERTER welder
rm450ha-5h
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GTO thyristor
Abstract: 40A GTO thyristor GTO thyristor driver thyristor inverter circuit diagram THYRISTOR GTO GTO thyristor Application notes gto Gate Drive circuit vvvf speed control of 3 phase induction motor GTO gate drive unit Snubber circuits theory, design and application
Text: MITSUBISHI HIGH POWER SEMICONDUCTORS MITSUBISHI HIGH POWER SEMICONDUCTORS FEATURE AND APPLICATIONAND OF GATE TURN-OFF THYRISTORS FEATURE APPLICATION OF GATE TURN-OFF THYRISTORS Gate turn-off GTO thyristors are able to not only turn on the main current but also turn it off, provided with a gate drive circuit. Unlike conventional thyristors, they have no commutation circuit, downsizing application systems while improving
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FH HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1000FH OUTLINE DRAW ING Dimensions in mm wm • IF AV A ve ra g e fo rw a rd c u rre n t — • V rrm Repetitive peak reverse voltage • •■• 2500V, 2 8 0 0 V
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FD1000FH
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L1047
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FH-56 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1000FH-56 OUTLINE DRAWING Dimensions in mm Average forward current. . 1000A • V r r m Repetitive peak reverse voltage. . 2500V, 2800V
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FD1000FH-56
L1047
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FH-56 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FH-56 • lF AV Average forw ard c u rre n t. . 1000A • V rrm Repetitive peak reverse voltage. . 2500V, 2800V
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FD1000FH-56
1000jiC
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Untitled
Abstract: No abstract text available
Text: 7 2 94 62 1 POWEREX INC Fast Recovery Rectifiers T1 D E l 72T4LE1 DDDlTt? T I~D I rrm I f av @ V rrm for 50% Duty Ifsm Fusing and Cycle, Half Tj(Max) Sine 1KHz (Amps x 103) @ 8.3 ms (Amps) 50 Hz 60 Hz (A2sec x 10*) (mA) 950 Tc=55°C lOOOf Tc = 79°C 1000
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72T4LE1
75T4b21
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A447
Abstract: A452
Text: 7 2 94 62 1 POWEREX INC Fast Recovery Rectifiers If av for 50% Duty I fsm Fusing Cycle, Half Sine 1KHz (Amps x 103) @ 8.3 ms (Amps) 50 Hz 60 Hz (A2sec x 10*) 950 Tc=55°C lOOOf Tc = 79°C 1000 Tc = B0°C 1200 Tc = 87“C 1275 D E l 7 2 T 4 L E 1 D D D l T t ? T I ~ D 7“ - 0 3 " ¿ 3
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72T4LE1
secx10*
DDG17bÃ
7-03-A3
DO-200AB
FD1000FH*
DO-200AC
A447
A452
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FD1000A-56
Abstract: FD3500AH Tf88 SR130L TF65 SR10A-8S FD1000A56 SR30D-8R SR130L-10S SR150L
Text: RECTIFIER D IO D E S • L O W AND MEDIUM POWER FOR GENERAL USE Max. ratings Repetitive peak reverse voltage Electrical characteristics Iran A 100 to 400 IpSwl M 1.0 (Ta = 4 0 ”C) Junction temperature V fc) 50 150 SR1G -4, 8, 12, 16 200 to 800 1.3(T l = 9 0 ’C)
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SR10A-8S,
SR10A-8R,
SR30D
SR30D-8R,
FDI00OFX-90
FD1500AV-90
FD20000U-120
FD1000A-56
FD3500AH
Tf88
SR130L
TF65
SR10A-8S
FD1000A56
SR30D-8R
SR130L-10S
SR150L
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