Untitled
Abstract: No abstract text available
Text: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
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FLM1314-12F
FLM1314-12F
FCSI0500M200
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FMM5048GJ
Abstract: 28940 mmic case styles
Text: FMM5048GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION
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FMM5048GJ
FMM5048GJ
FCSI0500M200
28940
mmic case styles
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fujitsu power amplifier GHz
Abstract: FMM5807X FUJITSU SEMICONDUCTOR phemt
Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5807X
21-27GHz
30dBm
FMM5807X
21-27GHz
FCSI0500M200
fujitsu power amplifier GHz
FUJITSU SEMICONDUCTOR phemt
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FMM5805
Abstract: No abstract text available
Text: FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 31.0dBm Typ. • High Gain: G1dB = 20.0dB(Typ.) • High PAE: ηadd = 27% (Typ.) • Low In/Out VSWR • Broad Band: 17.7 ~ 19.7GHz • Impedance Matched Zin/Zout = 50Ω
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FMM5805GJ-1
FMM5805GJ-1
FCSI0500M200
FMM5805
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fujitsu power amplifier GHz
Abstract: UM 2200 power amplifier mmic
Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5807X
21-27GHz
30dBm
FMM5807X
21-27GHz
FCSI0500M200
fujitsu power amplifier GHz
UM 2200
power amplifier mmic
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FLM7785-18F
Abstract: No abstract text available
Text: FLM7785-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM7785-18F
-45dBc
FLM7785-18F
FCSI0500M200
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Untitled
Abstract: No abstract text available
Text: FLM7785-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM7785-18F
-45dBc
FLM7785-18F
FCSI0500M200
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