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    FUJITSU SEMICONDUCTOR phemt

    Abstract: mmic case styles power amplifier mmic
    Text: FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 20dB (Typ.) High PAE: ηadd = 25% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815GJ is a packaged, high-gain, high linearity,


    Original     		PDF FMM5815GJ-1 31dBm FMM5815GJ the17 FCSI0402M200 FUJITSU SEMICONDUCTOR phemt mmic case styles power amplifier mmic

    FLD5F15CA-N8850

    Abstract: n893 N9010 n908 TM 1628 IC FLD5F1
    Text: Tunable LD Module with Wavelength Locker FLD5F15CA-N FEATURES: • CW light source with integrated wavelength locker • Output Power: 13dBm min. • Available at L Band ITU-T grid wavelengths between 1570.416 -1607.035nm • 4 Channel, Tunable Module • Wavelength stability better than ±25pm drift over 20 years


    Original     		PDF FLD5F15CA-N 13dBm 035nm FLD5F15CA-N) 13dBm) FCSI0402M200 FLD5F15CA-N8850 n893 N9010 n908 TM 1628 IC FLD5F1

    fujitsu optical module

    Abstract: 10 gb laser diode Fujitsu laser 24KM K3270 FLD3F10
    Text: 1,310nm MQW-DFB Modulator Integrated Laser FLD3F10NP-A FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection


    Original     		PDF 310nm FLD3F10NP-A 10Gb/s. FCSI0402M200 fujitsu optical module 10 gb laser diode Fujitsu laser 24KM K3270 FLD3F10