Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FMM5815GJ Search Results

    FMM5815GJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FMM5815GJ-1 Fujitsu RF Amplifier, General purpose amplifier, Single, Module, 20200 MHz, GJ, 7-Pin Original PDF

    FMM5815GJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FUJITSU SEMICONDUCTOR phemt

    Abstract: mmic case styles power amplifier mmic
    Text: FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 20dB (Typ.) High PAE: ηadd = 25% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815GJ is a packaged, high-gain, high linearity,


    Original     		PDF FMM5815GJ-1 31dBm FMM5815GJ the17 FCSI0402M200 FUJITSU SEMICONDUCTOR phemt mmic case styles power amplifier mmic

    Untitled

    Abstract: No abstract text available
    Text: FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 20dB (Typ.) High PAE: ηadd = 25% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815GJ-1 is a packaged, high-gain, high linearity, amplifier


    Original     		PDF FMM5815GJ-1 31dBm FMM5815GJ-1 the17