FMM1103VJ
Abstract: FUJITSU MICROWAVE
Text: FMM1103VJ GaAs Microwave Frequency Divider FEATURES • Operation to 12.0 GHz • Input Frequency divide by 8, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available
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FMM1103VJ
SMT-10
FMM1103VJ
FCSI0299M200
FUJITSU MICROWAVE
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Fujitsu GaAs FET Amplifier design
Abstract: FLL1500IU-2A FLL1500 Fujitsu GaAs FET Amplifier
Text: FLL1500IU-2A L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 45%. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2A is a 150 Watt GaAs FET that employs a push-pull design that
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FLL1500IU-2A
FLL1500IU-2A
FCSI0299M200
Fujitsu GaAs FET Amplifier design
FLL1500
Fujitsu GaAs FET Amplifier
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FLL120
Abstract: No abstract text available
Text: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that
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FLL1200IU-3
FLL1200IU-3
FCSI0299M200
FLL120
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Fujitsu GaAs FET Amplifier design
Abstract: Fujitsu GaAs FET Amplifier FLL1200IU-3
Text: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that
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FLL1200IU-3
FLL1200IU-3
FCSI0299M200
Fujitsu GaAs FET Amplifier design
Fujitsu GaAs FET Amplifier
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fujitsu power amplifier GHz
Abstract: FLL1200IU-3
Text: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that
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FLL1200IU-3
FLL1200IU-3
FCSI0299M200
fujitsu power amplifier GHz
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Untitled
Abstract: No abstract text available
Text: FLL1200IU-3 - L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation.
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FLL1200IU-3
FLL1200IU-3
FCSI0299M200
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fujitsu gaas fet
Abstract: Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design FLL1500IU-2A fujitsu gaas fet L-band
Text: FLL1500IU-2A L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 45%. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2A is a 150 Watt GaAs FET that employs a push-pull design that
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FLL1500IU-2A
FLL1500IU-2A
FCSI0299M200
fujitsu gaas fet
Fujitsu GaAs FET Amplifier
Fujitsu GaAs FET Amplifier design
fujitsu gaas fet L-band
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CD 294
Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package
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FLC167WF
FLC167WF
FCSI0598M200
CD 294
FLL357
348dB
FLL400IP-2
FLK102MH-14
hemt low noise die
Fujitsu GaAs FET Amplifier
FLK017XP
FLL120
fujitsu gaas fet
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