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Abstract: No abstract text available
Text: ESE D N AMER PHILIPS/DISCRETE • bb53131 ODEO4bO S B U K 454-400A B U K 454-400B P o w e rM O S tra n s is to r r - 3 ? - n GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bb53131
54-400A
454-400B
BUK454
-400A
-400B
fcjb53T31
D0204b4
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choke marking nb 03
Abstract: SOT121 Package BLF246
Text: Philips Semiconductors a tiS 3 R 3 1 0 0 5 TRÔD 536 APX Product specification VHF power MOS transistor BLF246 b'ìE i> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability
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Q05TRÃ
BLF246
OT121
OT121
/CA93V
choke marking nb 03
SOT121 Package
BLF246
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BFQ253A
Abstract: BFQ233 BFQ233A BFQ253
Text: Philips Semiconductors b b £ 3 R 3 ]i G D 3 1 7 D ti EGO NPN 1 GHz video transistors M l APX Product specification BFQ233; BFQ233A "• N AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a
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BFQ233;
BFQ233A
BFQ253
BFQ253A
MB0883
MBB434
bbS3T31
DD31713
BFQ233A
BFQ233
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