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    FCA76N60 Price and Stock

    onsemi FCA76N60N

    MOSFET N-CH 600V 76A TO3PN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCA76N60N Tube 1,348 1
    • 1 $19.5
    • 10 $19.5
    • 100 $16.168
    • 1000 $12.93433
    • 10000 $12.93433
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    FCA76N60N Tube
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    Avnet Americas FCA76N60N Tube 4 Weeks 24
    • 1 -
    • 10 -
    • 100 $14.714
    • 1000 $13.8732
    • 10000 $13.0324
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    Fairchild Semiconductor Corporation FCA76N60N

    76 A, 600 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FCA76N60N 63
    • 1 $19.4014
    • 10 $19.4014
    • 100 $11.6408
    • 1000 $11.6408
    • 10000 $11.6408
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    Rochester Electronics FCA76N60N 92 1
    • 1 $15.32
    • 10 $15.32
    • 100 $14.4
    • 1000 $13.02
    • 10000 $13.02
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    FCA76N60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FCA76N60N Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 76A TO-3PN Original PDF

    FCA76N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FCA76N60N

    Abstract: SJ 76 A DIODE
    Text: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.)@ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next • Ultra Low Gate Charge (Typ. Qg = 218 nC) generation of high voltage super-junction (SJ) technology


    Original     		PDF FCA76N60N FCA76N60N SJ 76 A DIODE

    Untitled

    Abstract: No abstract text available
    Text: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 218 nC)


    Original     		PDF FCA76N60N

    SJ 76 A DIODE datasheet

    Abstract: SJ 76 A DIODE
    Text: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 218 nC)


    Original     		PDF FCA76N60N SJ 76 A DIODE datasheet SJ 76 A DIODE

    FCA76N60N

    Abstract: FCA76N60 613 MOSFET
    Text: SupreMOSTM FCA76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 218nC)


    Original     		PDF FCA76N60N 218nC) FCA76N60N FCA76N60 613 MOSFET