A29L008
Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
Text: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:
|
Original
|
PDF
|
A29L008
KbyteX15
SA10
SA11
SA12
SA13
SA14
SA15
SA16
|
A29L800
Abstract: A29L800V
Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.
|
Original
|
PDF
|
A29L800
KbyteX15
KwordX15
48TFBGA)
A29L800V
|
M29W008A
Abstract: M29W008AB M29W008AT
Text: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte
|
Original
|
PDF
|
M29W008AT
M29W008AB
TSOP40
M29W008A
M29W008AB
M29W008AT
|
28f800b5
Abstract: 28F002BC 28F008 28F200B5 28F800 AB-60 ab-65 28f400
Text: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview December 1996 Order Number: 292154-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
|
Original
|
PDF
|
AB-60
AP-611
AB-65
28f800b5
28F002BC
28F008
28F200B5
28F800
AB-60
28f400
|
MT28F008B3
Abstract: MT28F800B3
Text: 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks
|
Original
|
PDF
|
MT28F008B3
MT28F800B3
40-Pin
48-Pin
16KB/8K-word
100ns
MT28F800B3)
8/512K
44-Pin
MT28F008B3
MT28F800B3
|
ba37
Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary
|
Original
|
PDF
|
K8D1716UTC
K8D1716UBC
48TSOP1
48FBGA
047MAX
48-Ball
ba37
K8D1716U
K8D1716UBC
samsung nor flash
BA251
|
am29LV8000
Abstract: L800DB90VC S29AL008D L800DT S29al008
Text: Am29LV800D Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29AL008D supersedes Am29LV800D and is the factory-recommended migration path for this device. Please refer to the S29AL008D data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
|
Original
|
PDF
|
Am29LV800D
S29AL008D
am29LV8000
L800DB90VC
L800DT
S29al008
|
496k
Abstract: AT49F008A-90TI AT49F008A AT49F008AT AT49F8192A AT49F8192AT
Text: Features • Single-voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time – 90 ns Internal Erase/Program Control Sector Architecture – One 8K Word 16K Bytes Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks
|
Original
|
PDF
|
AT49F008A
AT49F8192A
1199F
04/01/xM
496k
AT49F008A-90TI
AT49F008AT
AT49F8192AT
|
M29F800D
Abstract: M29F800DB M29F800DT
Text: M29F800DT M29F800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
|
Original
|
PDF
|
M29F800DT
M29F800DB
512Kb
TSOP48
M29F800D
M29F800DB
M29F800DT
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are
|
Original
|
PDF
|
DS05-20888-2E
MBM29LV800TE70/90/MBM29LV800BE70/90
MBM29LV800TE/BE
48-pin
MBM29LV800TE/BE
|
29F800T
Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
Text: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption
|
Original
|
PDF
|
MX29F800T/B
1Mx8/512Kx16]
70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/08/2000
DEC/04/2000
FEB/12/2001
29F800T
7D000H-7DFFFH
SA13
MX29F800T
SA10
SA11
SA12
|
FPT-48P-M19
Abstract: FPT-48P-M20 mbm28f800 MBM28F800TA 77ff
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
|
Original
|
PDF
|
DS05-20841-4E
8/512K
9F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
48-pin
44-pin
FPT-48P-M19
FPT-48P-M20
mbm28f800
MBM28F800TA
77ff
|
FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
|
Original
|
PDF
|
DS05-20871-5E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
F0210
FPT-48P-M19
FPT-48P-M20
|
BGA-48P-M13
Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
|
Original
|
PDF
|
DS05-20846-6E
9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12
MBM29LV160T/B
16M-bit,
48-pin
48-ball
F0306
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
MBM29LV160B-12PBT
|
|
|
DL161
Abstract: DL162 DL163
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while
|
Original
|
PDF
|
Am29DL16xD
16-Bit)
Am29DL164D
Am29DL162D
DL161
DL162
DL163
|
L323C
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile
|
OCR Scan
|
PDF
|
Am29DL32xC
16-Bit)
29DL32xC
L323C
|
Untitled
Abstract: No abstract text available
Text: PRODUCT PREVIEW Smart5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 28F200B5, 28F400B5, 28F800B5 • SmartVoltage Technology — Smart5™ Flash: 5V Reads, 5V or 12V Writes — Increased Programming Throughput at 12V V pp ■ Very High-Performance Read — 2-, 4-Mbit: 60 ns Access Time
|
OCR Scan
|
PDF
|
28F200B5,
28F400B5,
28F800B5
x8/x16-Configurable
4fl2bl75
D174733
28F002/200BX-T/B
28F002/200BL-T/B
28F002/400BL-T/B
28F002/400BX-T/B
|
Untitled
Abstract: No abstract text available
Text: Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 90 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte-By-Byte Programming -1 0 |is/Byte Typical Hardware Data Protection
|
OCR Scan
|
PDF
|
AT49F080
commercia-15TC
AT49F080T-15CC
AT49F080T-15RC
AT49F080T-12TI
AT49F080T-12CI
AT49F080T-12RI
AT49F080T-12TC
AT49F080T-12RC
AT49F080T-90TI
|
Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 16 M 2 M x 8 / 1 M x 16 BIT MBM29LV160T-90-12/MBM29LV16 OB-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
|
OCR Scan
|
PDF
|
MBM29LV160T-90-12/MBM29LV16
OB-90/-12
48-pin
46-pin
48-ball
6C-46P-M02)
46002S-4C
MBM29LV160T-90/-12/M
LV160
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA TH 50VSF1420/1421AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRA M AND FLASH M EM O R Y M IXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216 bit flash memory. The SEA M is organized as 262,144 words by 8 bits and the flash memory
|
OCR Scan
|
PDF
|
50VSF1420/1421AAXB
TH50VSF1420/1421AAXB
152-bit
48-pin
P-BGA48-1014-1
TH50VSF14
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR I DATA SHEET ¡ DS05-50101-2E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM MB84VA2000-1o/M B84VA2001-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time
|
OCR Scan
|
PDF
|
DS05-50101-2E
MB84VA2000-1o/M
B84VA2001-10
MB84VA2000:
MB84VA2001:
B84VA2000-1o/M
VA2001-1
48P-M
MCM-M001-2-3
|
Untitled
Abstract: No abstract text available
Text: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase
|
OCR Scan
|
PDF
|
HN29WT800/HN29WB800
1048576-word
524288-word
16-bit
ADE-203-537
HN29WT800
HN29WB800
8-bit/512-kword
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TH50VSF0320/0321BCXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH M EM O RY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH 50V SF0320/0321BCXB is a mixed containing a package 1,048,576-bit SRAM and a 8,388,608bit flash memory. The SRAM is organized as 131,072 words by 8 bits and the flash memory is
|
OCR Scan
|
PDF
|
TH50VSF0320/0321BCXB
SF0320/0321BCXB
576-bit
608bit
48-pin
P-BGA48-1012-1
TH50VSF0320/0321
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20858-4E FLASH MEMORY CMOS 8M 1M x 8 BIT M B M29LV008TA-70/-90/-12/M BM29LV008B A-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
|
OCR Scan
|
PDF
|
DS05-20858-4E
M29LV008TA-70/-90/-12/M
BM29LV008B
40-pin
FPT-40P-M07)
F40008S-1C-1
|