fbs MARKING TRANSISTOR
Abstract: No abstract text available
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360T
VPS05996
EHA07524
Jan-28-2003
fbs MARKING TRANSISTOR
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BFR360T
Abstract: SC75
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360T
VPS05996
EHA07524
Jun-16-2003
BFR360T
SC75
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Untitled
Abstract: No abstract text available
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360T
VPS05996
EHA07524
Jan-29-2002
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BFP36
Abstract: No abstract text available
Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4 Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP360W
VPS05605
OT343
1E-14
Jan-28-2003
BFP36
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IC 7306
Abstract: No abstract text available
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360T
VPS05996
EHA07524
Jul-29-2002
IC 7306
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BFR360T
Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360T
VPS05996
BFR360T
BCR108T
E6327
SC75
TRANSISTOR MARKING NK
infineon marking code L2
fbs MARKING TRANSISTOR
transistor marking code 325
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BFP36
Abstract: No abstract text available
Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4 Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP360W
VPS05605
OT343
Aug-20-2002
BFP36
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BFP360W
Abstract: BFP36
Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4 Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP360W
VPS05605
OT343
Jun-16-2003
BFP360W
BFP36
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BFP36
Abstract: No abstract text available
Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4 Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP360W
VPS05605
OT343
BFP36
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Untitled
Abstract: No abstract text available
Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360T
VPS05996
15cal
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sen 1327 gas sensor
Abstract: UK10N uk3n UK16N UK5N UKK3 UKK5 UK4-TG UK6N UK5-TWIN
Text: Modular Terminal Blocks Micro Terminal Blocks These Micro-Terminal blocks feature compact construction 4.2mm wide , are bridgeable in the center, have matching ground blocks and mount on NS 15 rails. MT1.5 9not shown) is a 2 conductor block (1-input, 1-output), MT1.5-TWIN has 1-input, 2 outputs
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UL94VO.
60/mtr
30/mtr.
80/mtr.
95/mtr.
sen 1327 gas sensor
UK10N
uk3n
UK16N
UK5N
UKK3
UKK5
UK4-TG
UK6N
UK5-TWIN
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BFR360F
Abstract: AN077
Text: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101
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BFR360F
BFR360F
AN077
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Untitled
Abstract: No abstract text available
Text: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications 2 3 • Collector design supports 5V supply voltage 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101
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BFR360F
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Untitled
Abstract: No abstract text available
Text: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation 2 3 • For low noise amplifiers 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR360F
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Untitled
Abstract: No abstract text available
Text: BFR360F NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation 2 3 For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360F
Apr-14-2003
-j100
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2R5TPE470M9
Abstract: C3225X7R1E106M MAX8720 MAX8720EEI MAX8720ETX SI7390DP
Text: 19-3319; Rev 2; 9/05 KIT ATION EVALU E L B A IL AVA Dynamically Adjustable 6-Bit VID Step-Down Controller The MAX8720 step-down controller is intended for core CPU DC-DC converters in notebook computers. It features a dynamically adjustable output, ultra-fast transient
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MAX8720
100ns
MAX8720
2R5TPE470M9
C3225X7R1E106M
MAX8720EEI
MAX8720ETX
SI7390DP
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RF NPN POWER TRANSISTOR C 10-12 GHZ
Abstract: BFR360F TRANSISTOR MARKING NK
Text: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BFR360F
RF NPN POWER TRANSISTOR C 10-12 GHZ
BFR360F
TRANSISTOR MARKING NK
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BFR360F
Abstract: 104GHz transitor RF 98
Text: BFR360F NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation 2 3 For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360F
Jun-16-2003
-j100
BFR360F
104GHz
transitor RF 98
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Untitled
Abstract: No abstract text available
Text: BFR360F Low Noise Silicon Bipolar RF Transistor • Low noise amplifier for low current applications • Collector design supports 5 V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free thin small
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BFR360F
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: BFR360F NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation 2 3 For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360F
Jan-29-2002
-j100
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Untitled
Abstract: No abstract text available
Text: BFR360F NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation 2 3 For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360F
21cal
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IC 7437
Abstract: BFR360F
Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360F
te20mA
Jun-22-2001
-j100
IC 7437
BFR360F
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Untitled
Abstract: No abstract text available
Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360F
Aug-22-2001
-j100
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Untitled
Abstract: No abstract text available
Text: International I “ R Rectifier smpsmosfet , ^ lo _ !^8.!0 IR F IB /N d OA HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching • High Voltage Isolation = 2.5KVRMS® V d ss
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OCR Scan
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