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    FBS MARKING TRANSISTOR Search Results

    FBS MARKING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FBS MARKING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fbs MARKING TRANSISTOR

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 EHA07524 Jan-28-2003 fbs MARKING TRANSISTOR

    BFR360T

    Abstract: SC75
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 EHA07524 Jun-16-2003 BFR360T SC75

    Untitled

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 EHA07524 Jan-29-2002

    BFP36

    Abstract: No abstract text available
    Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP360W VPS05605 OT343 1E-14 Jan-28-2003 BFP36

    IC 7306

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 EHA07524 Jul-29-2002 IC 7306

    BFR360T

    Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 BFR360T BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325

    BFP36

    Abstract: No abstract text available
    Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP360W VPS05605 OT343 Aug-20-2002 BFP36

    BFP360W

    Abstract: BFP36
    Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP360W VPS05605 OT343 Jun-16-2003 BFP360W BFP36

    BFP36

    Abstract: No abstract text available
    Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP360W VPS05605 OT343 BFP36

    Untitled

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 15cal

    sen 1327 gas sensor

    Abstract: UK10N uk3n UK16N UK5N UKK3 UKK5 UK4-TG UK6N UK5-TWIN
    Text: Modular Terminal Blocks Micro Terminal Blocks These Micro-Terminal blocks feature compact construction 4.2mm wide , are bridgeable in the center, have matching ground blocks and mount on NS 15 rails. MT1.5 9not shown) is a 2 conductor block (1-input, 1-output), MT1.5-TWIN has 1-input, 2 outputs


    Original     		PDF UL94VO. 60/mtr 30/mtr. 80/mtr. 95/mtr. sen 1327 gas sensor UK10N uk3n UK16N UK5N UKK3 UKK5 UK4-TG UK6N UK5-TWIN

    BFR360F

    Abstract: AN077
    Text: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original     		PDF BFR360F BFR360F AN077

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications 2 3 • Collector design supports 5V supply voltage 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original     		PDF BFR360F

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation 2 3 • For low noise amplifiers 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F Apr-14-2003 -j100

    2R5TPE470M9

    Abstract: C3225X7R1E106M MAX8720 MAX8720EEI MAX8720ETX SI7390DP
    Text: 19-3319; Rev 2; 9/05 KIT ATION EVALU E L B A IL AVA Dynamically Adjustable 6-Bit VID Step-Down Controller The MAX8720 step-down controller is intended for core CPU DC-DC converters in notebook computers. It features a dynamically adjustable output, ultra-fast transient


    Original     		PDF MAX8720 100ns MAX8720 2R5TPE470M9 C3225X7R1E106M MAX8720EEI MAX8720ETX SI7390DP

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: BFR360F TRANSISTOR MARKING NK
    Text: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR360F RF NPN POWER TRANSISTOR C 10-12 GHZ BFR360F TRANSISTOR MARKING NK

    BFR360F

    Abstract: 104GHz transitor RF 98
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F Jun-16-2003 -j100 BFR360F 104GHz transitor RF 98

    Untitled

    Abstract: No abstract text available
    Text: BFR360F Low Noise Silicon Bipolar RF Transistor • Low noise amplifier for low current applications • Collector design supports 5 V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free thin small


    Original     		PDF BFR360F AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F Jan-29-2002 -j100

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F 21cal

    IC 7437

    Abstract: BFR360F
    Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F te20mA Jun-22-2001 -j100 IC 7437 BFR360F

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F Aug-22-2001 -j100

    Untitled

    Abstract: No abstract text available
    Text: International I “ R Rectifier smpsmosfet , ^ lo _ !^8.!0 IR F IB /N d OA HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching • High Voltage Isolation = 2.5KVRMS® V d ss


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