FBGA 12x12 TRAY
Abstract: nec 1230 JEDEC TRAY DIMENSIONS FBGA
Text: TRAY CONTAINER UNIT : mm 8x20=160 135°C MAX. 16.40 A' 12.30 114.8 FBGA12×12B 10.55 12.30 15.50 294.5 10.25 315.0 322.6 SECTION A – A' (6.35) (6.29) 12.30 12.00 7.62 135.9 PPE A Applied Package 209-pin Plastic FBGA (12×12) Quantity (pcs) 160 MAX. FBGA 12×12B
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FBGA12
209-pin
SSD-A-H7722-1
FBGA 12x12 TRAY
nec 1230
JEDEC TRAY DIMENSIONS FBGA
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JEDEC FBGA
Abstract: fBGA package tray 12 JEDEC TRAY DIMENSIONS FBGA fBGA package tray FBGA 12x12 ESP TRAY FBGA 12x12 TRAY FBGA 160 FBGA-12 fBGA 12 package tray
Text: TRAY CONTAINER UNIT : mm 8x20=160 NEC 114.8 12.30 7 135°C MAX. A' 12.30 15.50 10.25 294.5 315.0 322.6 Section A – A' (6.29) 12.30 12.00 (6.35) 7.62 16.40 FBGA12×12ESP-1 10.55 135.9 PPE A Applied Package Quantity (pcs) Tray FBGA 12×12 ESP-1 121-pin Plastic FBGA (12×12)
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FBGA12
12ESP-1
121-pin
144-pin
160-pin
180-pin
204-pin
209-pin
337-pin
397-pin
JEDEC FBGA
fBGA package tray 12
JEDEC TRAY DIMENSIONS FBGA
fBGA package tray
FBGA 12x12 ESP TRAY
FBGA 12x12 TRAY
FBGA 160
FBGA-12
fBGA 12 package tray
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PDF
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JEDEC FBGA
Abstract: FBGA-12 JEDEC TRAY DIMENSIONS FBGA fBGA package tray
Text: TRAY CONTAINER UNIT : mm 8x20=160 NEC 114.8 135.9 PPE 12.30 7 A' 135°C MAX. 16.40 10.55 FBGA12×12ESP-1 A 12.30 15.50 294.5 10.25 315.0 322.6 SECTION A – A' (6.29) (6.35) 7.62 12.30 12.00 Applied Package Quantity (pcs) FBGA 12×12ESP-1 Tray 121-pin Plastic FBGA (12×12)
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FBGA12
12ESP-1
121-pin
144-pin
160-pin
180-pin
209-pin
337-pin
397-pin
JEDEC FBGA
FBGA-12
JEDEC TRAY DIMENSIONS FBGA
fBGA package tray
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NP351-064-148
Abstract: NP351-18464 NP351 NP351-080-128 20890 14422 NP351-180-139 NP35 400X400 NP351-11230
Text: NP351 Series Open Top Fine Ball Grid Array (FBGA, 0.80mm Pitch) Specifications Part Number (Details) 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute 100m Ω max. at 10mA/20mV max. Contact Resistance:
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NP351
10mA/20mV
CP351-30413-*
NP351-30431-*
NP351-43216-*
NP351-52009-*
NP351-532-83-*
NP351-064-148
NP351-18464
NP351-080-128
20890
14422
NP351-180-139
NP35
400X400
NP351-11230
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UBGA49
Abstract: EPM3128A EPM7032AE EPM7064AE EPM7128AE EPM7128B EPM7128S EPM7160S EPM7256AE
Text: CPLD Package & I/O Matrix December 15, 2002. This document is revised quarterly. Visit the Altera web site at www.altera.com for the latest version. 36 68 100-Pin TQFP 36 84 84 100 120 120 36 84 100 120 68 68 84 100 212 256-Pin BGA 68 100-Pin FBGA 1.0 mm
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100-Pin
EPM3512A
160-Pin
EPM3256A
EPM3128A
EPM7256S
EPM7192S
EPM7160S
EPM7064S
EPM7128S
UBGA49
EPM3128A
EPM7032AE
EPM7064AE
EPM7128AE
EPM7128B
EPM7128S
EPM7160S
EPM7256AE
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EA1 transistor
Abstract: 148-PIN fbga 12X12
Text: 148-PIN PLASTIC FBGA 12x12 OUTLINE DRAWINGS w D S B ZD D1 B 13 12 11 10 9 8 7 6 5 4 3 2 1 ZE A E1 E NM L K J HG F E DC B A w INDEX MARK S A 4-C1.0 4-R0.3 A 25° y1 A2 S S y S e 148- φ b A1 φ x M S A B ITEM D MILLIMETERS 12.00±0.10 D1 11.4 E E1 12.00±0.10
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148-PIN
12x12)
P148F1-80-EA1
EA1 transistor
fbga 12X12
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b 0409 h
Abstract: No abstract text available
Text: Packing Name Mounting Pad JEDEC Tray PBGA 12x12 116 pin FBGA 12 × 12 A W S B B B 13 12 11 10 9 8 7 6 5 4 3 2 1 A C D N M L K J H G F E D C B A P Index mark Q W S A J I R H S K S F E φM L M G S A B NOTES 1. Controlling dimension millimeter. 2. Each ball centerline is located within φ 0.08 mm (φ 0.003 inch) of
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P116S1-YJC
b 0409 h
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1f1-1717-a19
Abstract: 153FBGA BGA 6x6 tray FBGA tray kostat tray bga 6x6 169fbga-12.0x16.0-8x16-0 78BOC-11 78BOC ePAK BGA 5x5 tray 153FBGA-9
Text: Jul. 2010 Packing Tray Material Line-up Quantity Bake Temp. 8.1*15.1 8*12 ,256M DDR 5G 60WMBG Package 8*12 130℃ MAX 60M/54WBGA-8.10X15.10-8X12-A TR_MARKING LA69-00635A Material Code Material Spec 48TBGA,10.0*9.0(8*16) 8*16 130℃ MAX 48-TBGA-10.0X9.0-8X16-O
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60WMBG
60M/54WBGA-8
10X15
10-8X12-A
LA69-00635A
48TBGA
48-TBGA-10
0-8X16-O
LA69-00267A
ADS11981
1f1-1717-a19
153FBGA
BGA 6x6 tray
FBGA tray kostat
tray bga 6x6
169fbga-12.0x16.0-8x16-0
78BOC-11
78BOC
ePAK BGA 5x5 tray
153FBGA-9
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MX29GL256
Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
Text: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes
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AT49SV163D
48-Pin
48-Ball
S29AS016J
EN29SL800
S29AS00gest
MX29GL256
28F512P30 Numonyx
M29W256G
28F00AP30
w25q128
MX25L6445
28F00AM29EW
M29DW127G
28F128P30
PF38F3040M0Y3D
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K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-10-ALL-001
K9F2G08U0C
K9K8G08U0D
K9ABG08U0A
K4X2G323PC
K9F4G08U0B-PCB0
K9F1G08U0C
K9F2G08U0B
K9F2G08U0B-PCB0
K9F1G08U0D-SCB0
K9WBG08U1M-PIB0
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samsung ddr3 ram MTBF
Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks
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BR-12-ALL-001
samsung ddr3 ram MTBF
KLM2G1HE3F-B001
KLM4G1FE3B-B001
KLMAG2GE4A-A001
k4B2G1646
KLMAG
KLM8G2FE3B-B001
K4B2G0446
klm8g
k4x2g323pd
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fcBGA PACKAGE thermal resistance
Abstract: 409-ball CERAMIC PIN GRID ARRAY wire lead frame lead frame pin grid array 30-PIN TSOP 48 stacked flash bonding TSOP 48 thermal resistance Sharp Packages SSOP MM1248 ebga 304
Text: IC PACKAGE FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America
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K9HDG08U1A
Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks
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BR-11-ALL-001
K9HDG08U1A
K9LCG08U0A
k4g10325fe-hc04
KLM2G1DEHE-B101
K9WAG08U1B-PIB0
k9gag08u0e
Ltn140at
SAMSUNG HD502HJ
hd204ui
klm2g1dehe
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K4X2G323PD8GD8
Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from
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BR-12-ALL-001
K4X2G323PD8GD8
K9HFGY8S5A-HCK0
K4H511638JLCCC
samsung eMMC 5.0
KLMBG4GE2A-A001
K9K8G08U0D-SIB0
K4X51163PK-FGD8
KLMAG2GE4A
k4h561638n-lccc
K4G10325FG-HC03
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ADQ11
Abstract: 12X12 POP PACKAGE ADQ14 d3d16
Text: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet
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S72NS-P
ADQ11
12X12 POP PACKAGE
ADQ14
d3d16
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S29WS256P
Abstract: S29WS-P S73WS-P
Text: S73WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Mobile SDRAM on Shared Bus S73WS-P based MCP Products Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion
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S73WS-P
S29WS256P
S29WS-P
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S71WS512PD0
Abstract: S29WS512P S29WS-P S71WS512PC0 S71WS512PC0HF3 S71WS512PD0HF3 S71WS-P
Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet Advance Information S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71WS-P
S71WS512PD0
S29WS512P
S29WS-P
S71WS512PC0
S71WS512PC0HF3
S71WS512PD0HF3
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Untitled
Abstract: No abstract text available
Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet Advance Information S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71WS-P
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S71WS128PB0
Abstract: S71WS256PC0HH3YR0 S71WS512PD0HF3 H-EE 32 S71WS512PD0HH3 S71WS256 TRAY FBGA 11X13
Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71WS-P
S71WS128PB0
S71WS256PC0HH3YR0
S71WS512PD0HF3
H-EE 32
S71WS512PD0HH3
S71WS256
TRAY FBGA 11X13
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66 ball nor flash
Abstract: S71WS-P BGA Package 14x14 S71WS128PC0 S71WS512PD0 spansion top marking S29WS128P S29WS256P S29WS512P S29WS-P
Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71WS-P
66 ball nor flash
BGA Package 14x14
S71WS128PC0
S71WS512PD0
spansion top marking
S29WS128P
S29WS256P
S29WS512P
S29WS-P
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S72NS256PD0
Abstract: S72NS512PD0 S72NS-P S29NS-P S72NS128PD0
Text: S72NS-P Based MCPs/PoPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P Based MCPs/PoPs Cover Sheet
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S72NS-P
S72NS256PD0
S72NS512PD0
S29NS-P
S72NS128PD0
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S71WS256PC0HH3
Abstract: S71WS512PD0HH3 SWM032D spansion date code marking TRAY FBGA 11X13 S71WS256PD0HH3 S71WS256PC0HH3YR SWM064D133S1R S71WS256PC0HF3
Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71WS-P
S71WS256PC0HH3
S71WS512PD0HH3
SWM032D
spansion date code marking
TRAY FBGA 11X13
S71WS256PD0HH3
S71WS256PC0HH3YR
SWM064D133S1R
S71WS256PC0HF3
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12X12 POP PACKAGE
Abstract: 2118 FAMILY DRAM block diagram laser weapon 2118 FAMILY DRAM
Text: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet
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S72NS-P
12X12 POP PACKAGE
2118 FAMILY DRAM block diagram
laser weapon
2118 FAMILY DRAM
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stk ic 5.1 circuit diagram
Abstract: uPD77115GK-9EU uPD77016 uPD77111 uPD77115 uPD77115A uPD77115F1-CN6 STK IC stk audio ic
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD77115, 77115A 16-BIT FIXED-POINT DIGITAL SIGNAL PROCESSOR DESCRIPTION The µPD77115 and µPD77115A are 16-bit fixed-point digital signal processors DSP . The µPD77115 and µPD77115A are RAM based DSP and have the specific circuit for audio application.
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PD77115,
7115A
16-BIT
PD77115
PD77115A
stk ic 5.1 circuit diagram
uPD77115GK-9EU
uPD77016
uPD77111
uPD77115
uPD77115A
uPD77115F1-CN6
STK IC
stk audio ic
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