Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    48TBGA Search Results

    48TBGA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1f1-1717-a19

    Abstract: 153FBGA BGA 6x6 tray FBGA tray kostat tray bga 6x6 169fbga-12.0x16.0-8x16-0 78BOC-11 78BOC ePAK BGA 5x5 tray 153FBGA-9
    Text: Jul. 2010 Packing Tray Material Line-up Quantity Bake Temp. 8.1*15.1 8*12 ,256M DDR 5G 60WMBG Package 8*12 130℃ MAX 60M/54WBGA-8.10X15.10-8X12-A TR_MARKING LA69-00635A Material Code Material Spec 48TBGA,10.0*9.0(8*16) 8*16 130℃ MAX 48-TBGA-10.0X9.0-8X16-O


    Original     		PDF 60WMBG 60M/54WBGA-8 10X15 10-8X12-A LA69-00635A 48TBGA 48-TBGA-10 0-8X16-O LA69-00267A ADS11981 1f1-1717-a19 153FBGA BGA 6x6 tray FBGA tray kostat tray bga 6x6 169fbga-12.0x16.0-8x16-0 78BOC-11 78BOC ePAK BGA 5x5 tray 153FBGA-9

    K6R1008V1D

    Abstract: No abstract text available
    Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify


    Original     		PDF K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 002MIN K6R1008V1D

    Untitled

    Abstract: No abstract text available
    Text: Preliminary K6F1616U6B Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 29, 2002 Preliminary 0.1 Revise - Changed Typical IDR Data retention current from 4µA to 1µA


    Original     		PDF K6F1616U6B 55/Typ. 35/Typ.

    K6R1004C1D

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.


    Original     		PDF K6R1004C1D 256Kx4 32-SOJ-400 K6R1004C1D

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K6F4016U6G-EF70

    Abstract: K6F4016U6G K6F4016U6G-F K6F4016U6GE
    Text: Preliminary CMOS SRAM K6F4016U6G Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark June 11, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F4016U6G 256Kx16 55/Typ. 35/Typ. K6F4016U6G-EF70 K6F4016U6G-F K6F4016U6GE

    K6R4004C1D-JC

    Abstract: K6R4004V1D K6R4016V1D-J
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		PDF K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4004C1D-JC K6R4004V1D K6R4016V1D-J

    K6F2016R4E

    Abstract: No abstract text available
    Text: Preliminary K6F2016R4E Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F2016R4E 55/Typ. 35/Typ.

    K6F8016R6A-EF70

    Abstract: No abstract text available
    Text: K6F8016R6A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 21, 2000 Preliminary 0.1 Revise - Change package type from FBGA to TBGA


    Original     		PDF K6F8016R6A 48-TBGA 58/Typ. 32/Typ. K6F8016R6A-EF70

    K6R4008V1D

    Abstract: K6R4016C1D 44-TSOP2
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		PDF K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4008V1D K6R4016C1D 44-TSOP2

    Untitled

    Abstract: No abstract text available
    Text: K6F4016U4E Family CMOS SRAM Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 25, 2000 Preliminary 1.0 Finalize March 12, 2001 Final 2.0 Revise


    Original     		PDF K6F4016U4E 48-TBGA 58/Typ. 32/Typ.

    K6F1616U6A

    Abstract: K6F1616U6A-F
    Text: K6F1616U6A Family CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft September 11, 2001 Preliminary 1.0 Finalize - added 45ns product - changed ICC1 : 3mA to 2mA


    Original     		PDF K6F1616U6A 55/Typ. 35/Typ. K6F1616U6A-F

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM K6F8016U6B Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 24, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F8016U6B 32/Typ. 58/Typ.

    K6R4016V1D-J

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		PDF K6R4004C1D 115mA 100mA 32-SOJ-400 K6R4016V1D-J

    K1S321615A-E

    Abstract: No abstract text available
    Text: K1S321615A UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target June 12, 2001 Advance 0.1 Revise October 22, 2001 Preliminary March 11, 2002 Final - Removed low power product K1S321615A-EN85


    Original     		PDF K1S321615A 2Mx16 K1S321615A-EN85) 100uA 48-TBGA LIM-011025 K1S321615A-E

    300b tube

    Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
    Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM


    Original     		PDF FBGA-11 24-SOJ-300 -SOJ-300 -TSOP2-300AF -SOJ-300B 28-SOJ-300 28-SOJ-300A 28-SOJ-400 300b tube 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    Untitled

    Abstract: No abstract text available
    Text: K1S321615M UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date 0.0 Initial Draft - Design target 0.1 Revised - Change package type from FBGA to TBGA. - Improve operating current from 30mA to 25mA.


    Original     		PDF K1S321615M 2Mx16 70/85ns 100ns. YOON-000831

    Untitled

    Abstract: No abstract text available
    Text: Multi-Purpose Flash MPF + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 SST32HF202 / 402 / 8022Mb Flash + 2Mb SRAM, 4Mb Flash + 2Mb SRAM, 8Mb Flash + 2Mb SRAM (x16) MCP ComboMemory Data Sheet FEATURES: • MPF + SRAM ComboMemory – SST32HF202: 128K x16 Flash + 128K x16 SRAM


    Original     		PDF SST32HF202 SST32HF402 SST32HF802 8022Mb SST32HF202: SST32HF402: SST32HF802: S71209-05-000

    STATIC RAM 256KX16

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM K6F4016U4F Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 25, 2002 Preliminary 0.1 Revised - Deleted 45ns speed product


    Original     		PDF K6F4016U4F 256Kx16 55/Typ. 35/Typ. STATIC RAM 256KX16

    K6R4016V1D

    Abstract: K6R4016V1D-U K6R4016V1D -ui10 44-TSOP2-400BF K6R4016 K6R4008V1D K6R4016V1D-T K6R4016V1D-J K6R4004 K6R4016V1D10
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4016V1D 256Kx16 110mA 130mA 55/Typ. 35/Typ. K6R4016V1D K6R4016V1D-U K6R4016V1D -ui10 44-TSOP2-400BF K6R4016 K6R4008V1D K6R4016V1D-T K6R4016V1D-J K6R4004 K6R4016V1D10

    K1S1616B5M-E

    Abstract: No abstract text available
    Text: Advance K1S1616B5M UtRAM Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft - Design target Draft Date Remark May 30, 2002 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K1S1616B5M 1Mx16 K1S1616B5M LIM-020311 K1S1616B5M-E

    K6R4016V1D-J

    Abstract: K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		PDF K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF 002MIN K6R4016V1D-J K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016

    K6R1016V1D

    Abstract: No abstract text available
    Text: for AT&T CMOS SRAM K6R1016V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify Current modify


    Original     		PDF K6R1016V1D 64Kx16 100mA 55/Typ. 35/Typ. K6R1016V1D