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    FBGA 12 X 19 PACKAGE TRAY Search Results

    FBGA 12 X 19 PACKAGE TRAY Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    FBGA 12 X 19 PACKAGE TRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S25FL129

    Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
    Text: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,


    Original     		PDF 128Mb 256Mb 512Mb 1-866-SPANSION 43715B S25FL129 S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K

    S25FL256

    Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
    Text: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:


    Original     		PDF 128Mb 256Mb 512Mb 43715C S25FL256 S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    512MB NOR FLASH

    Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
    Text: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2


    Original     		PDF S72WS-N 16-bit 512MB NOR FLASH BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE

    BGA 130 MCP NAND DDR

    Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
    Text: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information


    Original     		PDF S72WS-P BGA 130 MCP NAND DDR JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    L1-L10

    Abstract: MD-12 WS128N dc m7 footprint JESD 95-1, SPP-010 top mark e5 S71WS-N S29WS128N S29WS256N S71WS128NB0
    Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM S71WS-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		PDF S71WS-N S71WS-N L1-L10 MD-12 WS128N dc m7 footprint JESD 95-1, SPP-010 top mark e5 S29WS128N S29WS256N S71WS128NB0

    K4S161622H-UC60

    Abstract: No abstract text available
    Text: K4S161622H CMOS SDRAM 16Mb H-die SDRAM Specification 50 TSOP-II with Pb-Free RoHS compliant Revision 1.4 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.4 August 2004 K4S161622H CMOS SDRAM Revision History


    Original     		PDF K4S161622H 183MHz 166MHz K4S161622H-UC60

    Untitled

    Abstract: No abstract text available
    Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/pSRAM Data Sheet (Advance Information)


    Original     		PDF S71PL-J 256M/128/64/32 16/8/4/2M 16-bit) 4M/2M/1M/512K/256K S71PL S29PL

    S71GL-N

    Abstract: Flash Memory Product Selector Guide MARKING 9B ME S29PL127J S71PL032J40 S71PL-J S71PL256N PSRAM A20-A18 sram 256mb 64X
    Text: S71PL-J Based MCPs Data Sheet Retired Product S71PL-J Based MCPs Cover Sheet This product has been retired and is not recommended for new designs. For new designs, S71GL-A or S71GL-N supersedes S71PL-J. Please contact your local Spansion sales office to determine the appropriate migration device, specifications, and


    Original     		PDF S71PL-J S71GL-A S71GL-N S71PL-J. Flash Memory Product Selector Guide MARKING 9B ME S29PL127J S71PL032J40 S71PL256N PSRAM A20-A18 sram 256mb 64X

    S71WS256PC0HH3YR

    Abstract: SWM064D133S1R S71WS256Pc0 S71WS256PC0HH S71WS256PC0HH3 SWM032D S71WS256PC S71WS512PD0HH3Y S71WS256PD
    Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S71WS-P S71WS256PC0HH3YR SWM064D133S1R S71WS256Pc0 S71WS256PC0HH S71WS256PC0HH3 SWM032D S71WS256PC S71WS512PD0HH3Y S71WS256PD

    sandisk 32GB Nand flash

    Abstract: SDED7-256M-N9 SDED7-256M-N9Y MD2534-D1G-X-P SDED5-512M-N9T SDED7-256M-N9T SDED5-002G-NC sded5-004g-ncy SanDisk SDED7-256M-N9 MD2534-D2G-X-P
    Text: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, May 2008 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk’s successful mDOC


    Original     		PDF 92-DS-1205-10 sandisk 32GB Nand flash SDED7-256M-N9 SDED7-256M-N9Y MD2534-D1G-X-P SDED5-512M-N9T SDED7-256M-N9T SDED5-002G-NC sded5-004g-ncy SanDisk SDED7-256M-N9 MD2534-D2G-X-P

    sram 256mb 64X

    Abstract: S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL-J S71PL256N S71PL127J
    Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM


    Original     		PDF S71PL-J 256M/128/64/32 16/8/4/2M 16-bit) 4M/2M/1M/512K/256K sram 256mb 64X S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL256N S71PL127J

    512MB NOR FLASH

    Abstract: BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE
    Text: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on


    Original     		PDF S72WS-N 16-bit 200rranty 512MB NOR FLASH BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE

    MR2A08AMYS35

    Abstract: AECQ-100 MR2A08AYS35 BGA 8 x 8 tray MR2A08A
    Text: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A08A 20-years AEC-Q100 MR2A08A 304-bit 1-877-347-MRAM EST170 MR2A08AMYS35 AECQ-100 MR2A08AYS35 BGA 8 x 8 tray

    "MATERIAL DECLARATION SHEET"

    Abstract: K7I321882M-FC16 marking 6J reset 7KB NC
    Text: K7I323682M K7I321882M 1Mx36 & 2Mx18 DDRII CIO b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit DDRII CIO b2 SRAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Pin name change from DLL to Doff. 2. Vddq range change from 1.5V to 1.5V~1.8V.


    Original     		PDF K7I323682M K7I321882M 1Mx36-bit, 2Mx18-bit 1Mx36 2Mx18 378KB 731KB K7I321882M-FC160 K7I321882M-FC250 "MATERIAL DECLARATION SHEET" K7I321882M-FC16 marking 6J reset 7KB NC

    MR2A08A

    Abstract: MARK W1 TSOP zd 409 MR2A08AYS35 MR2A08AMA35 MR2A08
    Text: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A08A 20-years MR2A08A 304-bit EST00170 MR2A08A, MARK W1 TSOP zd 409 MR2A08AYS35 MR2A08AMA35 MR2A08

    footprint jedec Mo-119

    Abstract: MR256A08BSO35 FBGA tray TRAY JEDEC BGA DRAWING
    Text: MR256A08B FEATURES 32K x 8 MRAM • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures


    Original     		PDF MR256A08B 20-years MR256A08B 144-bit 1-877-347-MRAM EST355 footprint jedec Mo-119 MR256A08BSO35 FBGA tray TRAY JEDEC BGA DRAWING

    K7Q163662B-FC16

    Abstract: date code body marking samsung
    Text: K7Q163662B K7Q161862B 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


    Original     		PDF K7Q163662B K7Q161862B 512Kx36-bit, 1Mx18-bit 512Kx36 1Mx18 K7Q163662B-FC16 date code body marking samsung

    0.35mm pitch BGA

    Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
    Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages


    Original     		PDF MR4A08B 20-years AEC-Q100 MR4A08B 216-bit MR4A08B, EST356 0.35mm pitch BGA MR4A08BCYS35R MR4A08BC mr4a08bcys MR4A08BCYS35

    Untitled

    Abstract: No abstract text available
    Text: MR2A08A 512K x 8 MRAM Memory FEATURES • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A08A AEC-Q100 MR2A08A EST00170

    MR0A08BC

    Abstract: MR0A08BCYS35
    Text: MR0A08B FEATURES 128K x 8 MRAM • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures


    Original     		PDF MR0A08B 20-years MR0A08B 576-bit EST183 MR0A08BC MR0A08BCYS35

    S29AL004D

    Abstract: No abstract text available
    Text: S29AL004D 4 Megabit 512 Kx 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development


    Original     		PDF S29AL004D 8-Bit/256 16-Bit) S29AL004D

    SAMSUNG NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0000 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report