SIDC06D120E
Abstract: No abstract text available
Text: Preliminary SIDC06D120E Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC06D120E 1200V ICn 5A A This chip is used for:
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SIDC06D120E
Q67050-A4008A001
4342E,
SIDC06D120E
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1000V 20A transistor
Abstract: fast recovery diode 600v 1200A 500V 100A thyristors diode 500A diode IC data book free download 600v RM400HA-34S DIODE 200A 600V fast recovery
Text: Powerex Fast Recovery Single Diode Modules 7/3/2003 500V 600V 600V 1000V 1200V CS340602 20A Ic A *click on the products for additional information 1200V 1400V 25A CS240650 QRS0620T30 250A 50A 100A CS241210 200A 35A RM35HG-34S CS240610 CS241020 QRS1220T30
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CS340602
CS341202
RM25HG-24S
CS241250
CS240650
CS240610
CS241210
QRS0620T30
CS241020
QRS1220T30
1000V 20A transistor
fast recovery diode 600v 1200A
500V 100A thyristors
diode 500A
diode
IC data book free download
600v
RM400HA-34S
DIODE 200A 600V
fast recovery
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fast recovery Diode 1200V 200A
Abstract: E80276 RM200HA-20F
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM200HA-20F,-24F HIGH SPEED SWITCHING USE INSULATED TYPE RM200HA-20F,-24F • IDC • VRRM DC current . 200A Repetitive peak reverse voltage . 1000/1200V • trr Reverse recovery time . 0.8µs
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RM200HA-20F
1000/1200V
E80276
E80271
fast recovery Diode 1200V 200A
E80276
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E80276
Abstract: RM200DA-20F
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM200DA-20F,-24F HIGH SPEED SWITCHING USE INSULATED TYPE RM200DA-20F,-24F • IDC • VRRM DC current . 200A Repetitive peak reverse voltage . 1000/1200V • trr Reverse recovery time . 0.8µs
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RM200DA-20F
1000/1200V
E80276
E80271
30MAX.
E80276
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E80276
Abstract: RM200DA-20F k1a2
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM200DA-20F,-24F HIGH SPEED SWITCHING USE INSULATED TYPE RM200DA-20F,-24F • IDC • VRRM DC current . 200A Repetitive peak reverse voltage . 1000/1200V • trr Reverse recovery time . 0.8µs
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RM200DA-20F
1000/1200V
E80276
E80271
30MAX.
E80276
k1a2
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VR300
Abstract: RM100HA-XXF E80276
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM100HA-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM100HA-XXF • IDC • VRRM DC current . 100A Repetitive peak reverse voltage . 600/1000/1200V • trr Reverse recovery time . 0.8µs
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RM100HA-XXF
600/1000/1200V
E80276
E80271
300/600V
VR300
RM100HA-XXF
E80276
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anode common fast recovery diode
Abstract: 3300V common anode 600v anode common fast recovery diode dual 600v 20a diode DIODE 100A diode super fast CC240602 CC240650 CC241250
Text: Powerex Fast Recovery Dual Diode Modules 7/3/2003 600V 1200V 1400V 3300V CC240602 CN2406020N Voltage CC241250 CN241250 CC240610 CN240610 QRC0610T30 QRF0610T30 CC241210 CN241210 QRC1210T30 QRF1210T30 QRC1410T30 QRF1410T30 200A QRC0620T30 QRF0620T30 QRC1220T30
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CC240602
CN2406020N
CC241250
CN241250
CC240610
CN240610
QRC0610T30
QRF0610T30
CC241210
CN241210
anode common fast recovery diode
3300V
common anode 600v
anode common fast recovery diode dual
600v 20a diode
DIODE 100A
diode super fast
CC240602
CC240650
CC241250
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Untitled
Abstract: No abstract text available
Text: SIDC53D120H8 Fast switching diode chip in Emitter Controlled -Technology Features: • 1200V Emitter Controlled technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC53D120H8 VR IF
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SIDC53D120H8
L4059C,
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E80276
Abstract: No abstract text available
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM100CA/C1A-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM100CA/C1A-XXF • IDC • VRRM DC current . 100A Repetitive peak reverse voltage . 600/800/1000/1200V • trr Reverse recovery time . 0.8µs
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RM100CA/C1A-XXF
600/800/1000/1200V
E80276
E80271
300/600V
E80276
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IC data book free download
Abstract: diode DIODE 200A 600V FAST RECOVERY DIODE fast recovery Diode 1200V 200A DUAL DIODE diodes diode 26 1200V fast dual DIODE 200A 600V
Text: Powerex Fast Recovery Dual Diode Modules 7/3/2003 600V 1200V CD240602 CD241202 1400V CD240650 CD241250 100A QRD0610T30 QRD1210T30 QRD1410T30 200A QRD0620T30 QRD1220T30 QRD1420T30 300A QRD0630T30 QRD1230T30 QRD1430T30 QRD0640T30 50A 3300V Voltage Circuit Config
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CD240602
CD241202
CD241250
QRD0610T30
QRD1210T30
QRD1410T30
QRD0620T30
QRD1220T30
QRD1420T30
QRD0630T30
IC data book free download
diode
DIODE 200A 600V
FAST RECOVERY DIODE
fast recovery Diode 1200V 200A
DUAL DIODE
diodes
diode 26
1200V fast
dual DIODE 200A 600V
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Untitled
Abstract: No abstract text available
Text: Bulletin I27246 08/06 HFA80FA120P HEXFREDTM Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V VF typ = 2.6V IF(AV) = 80A trr (typ) = 25ns Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal
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I27246
HFA80FA120P
HFA80FA120)
OT-227
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin I27246 08/06 HFA80FA120P HEXFREDTM Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V VF typ = 2.6V IF(AV) = 80A trr (typ) = 25ns Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal
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I27246
HFA80FA120P
HFA80FA120)
OT-227
OT-227)
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FS200R12KT4
Abstract: IEC62258-3
Text: SIDC105D120H8 Fast switching diode chip in Emitter Controlled -Technology A Features: • 1200V Emitter Controlled technology 120 µm chip soft, fast switching low reverse recovery charge small temperature coefficient Qualified according to JEDEC for target
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SIDC105D120H8
L4062C,
FS200R12KT4
IEC62258-3
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FS200R12KT4R
Abstract: No abstract text available
Text: SIDC105D120H8 Fast switching diode chip in Emitter Controlled -Technology A Features: • 1200V Emitter Controlled technology 120 µm chip soft, fast switching low reverse recovery charge small temperature coefficient Qualified according to JEDEC for target
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SIDC105D120H8
L4062C,
FS200R12KT4R
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APT60GF120JRDQ3
Abstract: APT10035LLL
Text: APT60GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT60GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT60GF120JRDQ3
20KHz
E145592
APT60GF120JRDQ3
APT10035LLL
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Untitled
Abstract: No abstract text available
Text: APT40GF120JRDQ2 1200V TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT40GF120JRDQ2
20KHz
E145592
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igbt 800v 80a
Abstract: No abstract text available
Text: APT40GF120JRDQ2 1200V TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT40GF120JRDQ2
APT40GF120JRDQ2
20KHz
E145592
igbt 800v 80a
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Untitled
Abstract: No abstract text available
Text: APT50GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT50GF120JRDQ3
20KHz
E145592
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d 6283 ic
Abstract: APT10035LLL APT50GF120JRDQ3
Text: APT50GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT50GF120JRDQ3
20KHz
E145592
d 6283 ic
APT10035LLL
APT50GF120JRDQ3
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Untitled
Abstract: No abstract text available
Text: APT60GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT60GF120JRDQ3 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT60GF120JRDQ3
20KHz
E145592
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MBM200GR12A
Abstract: Hitachi DSA0047
Text: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD
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PDE-M200GR12A-0
MBM200GR12A
00A/1200V,
Weight230g
MBM200GR12A
Hitachi DSA0047
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MBM200GR12A
Abstract: No abstract text available
Text: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD
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PDE-M200GR12A-0
MBM200GR12A
00A/1200V,
Weight230g
MBM200GR12A
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Untitled
Abstract: No abstract text available
Text: APTDF200H120G Diode Full Bridge Power Module VRRM = 1200V IC = 200A @ Tc = 60°C Application + AC1 • • • • AC2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features • • • • • • - • Ultra fast recovery times
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APTDF200H120G
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transistor c295
Abstract: No abstract text available
Text: bitemational pd-9.1120 jjjg Rectifier_IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features VCES= 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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OCR Scan
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IRGPH50FD2
10kHz)
O-247AC
transistor c295
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