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    3300V Price and Stock

    Panasonic Electronic Components ERJ-PB3B3300V

    RES SMD 330 OHM 0.1% 1/5W 0603
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    DigiKey ERJ-PB3B3300V Digi-Reel 36,751 1
    • 1 $0.26
    • 10 $0.206
    • 100 $0.0803
    • 1000 $0.03541
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    ERJ-PB3B3300V Cut Tape 36,751 1
    • 1 $0.26
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    • 1000 $0.03541
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    ERJ-PB3B3300V Reel 35,000 5,000
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    TTI ERJ-PB3B3300V Reel 10,000 5,000
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    Master Electronics ERJ-PB3B3300V 25,000
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    New Advantage Corporation ERJ-PB3B3300V 47 1
    • 1 $3.2
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    Panasonic Electronic Components ERJ-PB6B3300V

    RES SMD 330 OHM 0.1% 1/4W 0805
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    DigiKey ERJ-PB6B3300V Digi-Reel 19,345 1
    • 1 $0.29
    • 10 $0.163
    • 100 $0.0948
    • 1000 $0.05832
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    ERJ-PB6B3300V Cut Tape 19,345 1
    • 1 $0.29
    • 10 $0.163
    • 100 $0.0948
    • 1000 $0.05832
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    ERJ-PB6B3300V Reel 10,000 5,000
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    Master Electronics ERJ-PB6B3300V 5,000
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    Panasonic Electronic Components ERJ-P06F3300V

    RES SMD 330 OHM 1% 1/2W 0805
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    DigiKey ERJ-P06F3300V Reel 10,000 5,000
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    Mouser Electronics ERJ-P06F3300V 27,768
    • 1 $0.2
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    • 100 $0.041
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    TTI ERJ-P06F3300V Reel 20,000 5,000
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    Master Electronics ERJ-P06F3300V 20,000
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    Panasonic Electronic Components ERJ-H3EF3300V

    RES 330 OHM 1% 1/8W 0603
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    DigiKey ERJ-H3EF3300V Cut Tape 8,987 1
    • 1 $0.24
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    • 100 $0.0679
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    ERJ-H3EF3300V Digi-Reel 8,987 1
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    ERJ-H3EF3300V Reel 5,000 5,000
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    Master Electronics ERJ-H3EF3300V
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    Ozdisan Elektronik ERJ-H3EF3300V
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    Panasonic Electronic Components ERA-8VEB3300V

    RES 330 OHM 0.1% 1/4W 1206
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    DigiKey ERA-8VEB3300V Cut Tape 4,550 1
    • 1 $0.72
    • 10 $0.514
    • 100 $0.348
    • 1000 $0.22642
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    ERA-8VEB3300V Digi-Reel 4,550 1
    • 1 $0.72
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    • 100 $0.348
    • 1000 $0.22642
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    Mouser Electronics ERA-8VEB3300V 4,160
    • 1 $0.71
    • 10 $0.511
    • 100 $0.348
    • 1000 $0.246
    • 10000 $0.209
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    Master Electronics ERA-8VEB3300V
    • 1 -
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    • 100 $0.3215
    • 1000 $0.2697
    • 10000 $0.229
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    3300V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CM800HC-66H

    Abstract: r 1241 transistor
    Text: MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HC-66H ● IC . 800A ● VCES . 3300V


    Original     		PDF CM800HC-66H /-15V CM800HC-66H r 1241 transistor

    a4506

    Abstract: No abstract text available
    Text: 配線の時は次の注意事項をお守りください。 配線上の注意事項 表12. MLFC の絶縁距離 （１）絶縁距離 口出し線は遮へいを設けると外径が太くなる No. 3300V 6600V １ 接地金属体と電線 表面の距離：R（mm）


    Original     		PDF

    LTC6409IUDB

    Abstract: LTC6409 LTC2262-14 LTC6409C LTC6409CUDB LTC6409H LTC6409HUDB Marking C4 LTC6409UDB
    Text: LTC6409 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver Description Features 10GHz Gain-Bandwidth Product n 88dB SFDR at 100MHz, 2V P-P n 1.1nV/√Hz Input Noise Density n Input Range Includes Ground n External Resistors Set Gain Min 1V/V n 3300V/µs Differential Slew Rate


    Original     		PDF LTC6409 10GHz 100MHz, 10-Lead 8dB/14dB/20dB/26dB LTC6401-20/LTC6401-26 LTC6406/LTC6405 70dBc/ 65dBc LTC6409IUDB LTC6409 LTC2262-14 LTC6409C LTC6409CUDB LTC6409H LTC6409HUDB Marking C4 LTC6409UDB

    g04 series

    Abstract: TTL 7417 LT6411 ETC1-1TTR LT6411CUD single-ended to differential conversion LT6411IUD LTC2249 IMD310M
    Text: LT6411 650MHz Differential ADC Driver/Dual Selectable Gain Amplifier DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 650MHz –3dB Small-Signal Bandwidth 600MHz –3dB Large-Signal Bandwidth High Slew Rate: 3300V/µs Easily Configured for Single-Ended to Differential


    Original     		PDF LT6411 650MHz 650MHz 600MHz 200MHz 30MHz 87dBc 30MHz, 83dBc 70MHz g04 series TTL 7417 LT6411 ETC1-1TTR LT6411CUD single-ended to differential conversion LT6411IUD LTC2249 IMD310M

    MJ1000

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD1000S33HE3 IHM-B模块 IHM-Bmodule 初步数据/PreliminaryData VCES = 3300V IC nom = 1000A / ICRM = 2000A 典型应用 • 中压变流器 • 电机传动 • 大功率变流器 • UPS系统


    Original     		PDF DD1000S33HE3 BarcodeCode128 MJ1000

    DD1000S33HE3

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules DD1000S33HE3 IHM-Bモジュール IHM-Bmodule 暫定データ/PreliminaryData VCES = 3300V IC nom = 1000A / ICRM = 2000A 一般応用 • 中圧コンバータ


    Original     		PDF DD1000S33HE3 BarcodeCode128 DD1000S33HE3

    DD1000S33HE3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1000S33HE3 IHM-BModul IHM-Bmodule VorläufigeDaten/PreliminaryData VCES = 3300V IC nom = 1000A / ICRM = 2000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe


    Original     		PDF DD1000S33HE3 DD1000S33HE3

    Untitled

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules DD500S33HE3 IHM-Bモジュール IHM-Bmodule 暫定データ/PreliminaryData VCES = 3300V IC nom = 500A / ICRM = 1000A 一般応用 • 中圧コンバータ


    Original     		PDF DD500S33HE3 BarcodeCode128

    hvigbt diode

    Abstract: Converter for Induction Heating CM800HB-66H M6 transistor
    Text: MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-66H ● IC . 800A ● VCES . 3300V


    Original     		PDF CM800HB-66H hvigbt diode Converter for Induction Heating CM800HB-66H M6 transistor

    iec 61287

    Abstract: RM1200DG-66S RM1200DG high voltage diode
    Text: 三菱半導体〈HIGH VOLTAGE DIODE モジュール〉 RM1200DG-66S 大電力スイッチング用 絶縁形 High Voltage Diode モジュール RM1200DG-66S ¡IF …………………………………………… 1200A ¡VRRM ……………………………………… 3300V


    Original     		PDF RM1200DG-66S 18K/kW iec 61287 RM1200DG-66S RM1200DG high voltage diode

    CM1200HA-66H

    Abstract: No abstract text available
    Text: 三菱半導体〈HVIGBTモジュール〉 CM1200HA-66H 大電力スイッチング用 絶縁形 HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール CM1200HA-66H ¡IC …………………………………………… 1200A ¡VCES ……………………………………… 3300V


    Original     		PDF CM1200HA-66H 012K/W 024K/W CM1200HA-66H

    shin-etsu g747

    Abstract: silicon thermal grease g747
    Text: IGBT MODULE Spec.No.IGBT-SP-08038 R1 MBL800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-08038 MBL800E33E 000cycles) shin-etsu g747 silicon thermal grease g747

    Hitachi DSA00281

    Abstract: 330nf 250 v
    Text: IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-10002 MBN1500E33E3 000cycles) Hitachi DSA00281 330nf 250 v

    DIM400XCM33-F000

    Abstract: No abstract text available
    Text: DIM400XCM33-F000 IGBT Chopper Module DS5938-1.0 February 2009 LN26594 FEATURES Soft Punch Through Silicon Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8 V 400A


    Original     		PDF DIM400XCM33-F000 DS5938-1 LN26594) DIM400XCM33-F000

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-66H ● IC . 800A ● VCES . 3300V


    Original     		PDF CM800HB-66H

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD500S33HE3 IHM-B模块 IHM-Bmodule VCES = 3300V IC nom = 500A / ICRM = 1000A 典型应用 • 中压变流器 • 电机传动 • 牵引变流器 • UPS系统 • 风力发电机 TypicalApplications


    Original     		PDF DD500S33HE3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1000S33HE3 IHM-BModul IHM-Bmodule VCES = 3300V IC nom = 1000A / ICRM = 2000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter • USV-Systeme


    Original     		PDF DD1000S33HE3

    ALSIC 145

    Abstract: DFM400PXM33-F000
    Text: DFM400PXM33-F000 Fast Recovery Diode Module DS5909- 1.1 May 2008 LN26124 . FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 3300V 2.9V 400A 800A Isolated AlSiC Base with AlN substrates


    Original     		PDF DFM400PXM33-F000 DS5909- LN26124) DFM400PXM33-F000 3300-volt, ALSIC 145

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ1500R33HL3 IHM-B模块采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管 VCES = 3300V IC nom = 1500A / ICRM = 3000A


    Original     		PDF FZ1500R33HL3

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ1000R33HE3 IHM-B模块采用第三代高速沟槽栅/场终止IGBT和第三代发射极控制二极管 VCES = 3300V


    Original     		PDF FZ1000R33HE3

    thyristor YS 160 004

    Abstract: SG700FXF11 Gate Turn-off Thyristor 600V 20A lt700 Thyristor ys 170
    Text: GATE TURN-OFF THYRISTOR SG700FXF11 TENTATIVE DATA CHOPPER, INVERTER APPLICATION Unit in mm 3 -0 6 4 . Repetitive Peak Off-State Voltage V d RM=3300V . R.M.S On-State Current IT RMS =170A . Peak Turn-Off Current ITGQM=700A . Critical Rate of Rise of On-State Current


    OCR Scan     		PDF SG700FXF11 00A/ys 00V/ns Tc-125 00A/ys thyristor YS 160 004 SG700FXF11 Gate Turn-off Thyristor 600V 20A lt700 Thyristor ys 170

    100FXFG13

    Abstract: 100FXFH13
    Text: TOSHIBA 10OFXFG 13,1 OOFXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100FXFG13, 100FXFH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage V r r m = 3300V Average Forward Current ÏF AV = 1(>0a Reverse Recovery Time (Tj = 25°C) tj»j»—3.1/¿s


    OCR Scan     		PDF 10OFXFG13# 10OFXFH13 100FXFG13, 100FXFH13 100FXFG13 CATHOD13 100FXFG13 100FXFH13

    SG2200GXH24

    Abstract: SG2200FXF24 thyristor 2200A
    Text: TOSHIBA SG2200FXF24,SG2200GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG2200FXF24, SG2200GXH24 Unit in mm INVERTER APPLICATION 2 - 0 3 . 5 + 0.2 DEPTH 2.1 ±0 .4 Repetitive Peak Off-State Voltage : V]}R]y[ = 4500V, 3300V R.M.S On-State Current : It RMS = 1000A


    OCR Scan     		PDF SG2200FXF24 SG2200GXH24 SG2200FXF24, 2200a 00A//Â 000V//Â 10ms-Width SG2200GXH24 thyristor 2200A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM400DY-66H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-66H • Ic . .400A • VCES . . 3300V • Insulated Type


    OCR Scan     		PDF CM400DY-66H