FDN363N
Abstract: N6 marking diode marking n9
Text: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)
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FDN363N
250oC/W
FDN363N
N6 marking diode
marking n9
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n13 sot 65
Abstract: FDT461N 29e8 RS80 marking 461 m067
Text: FDT461N N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications • rDS ON = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Servo Motor Load Control • Qg(tot) = 2.36nC (Typ.), VGS = 10V • DC-DC converters • Low Miller Charge • Low QRR Body Diode
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FDT461N
OT-223
110oC/W)
n13 sot 65
FDT461N
29e8
RS80
marking 461
m067
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m079
Abstract: HUFA75433S3S HUFA75433S3ST Marking N8 KP26
Text: HUFA75433S3S N-Channel UltraFET MOSFETs 60V, 64A, 16mΩ General Description Applications These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse
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HUFA75433S3S
m079
HUFA75433S3S
HUFA75433S3ST
Marking N8
KP26
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HUFA76404DK8T
Abstract: NL103
Text: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode
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HUFA76404DK8T
HUFA76404DK8T
NL103
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AN7254
Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370
Text: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 5 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models
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ITF86116SQT
AN7254
AN7260
ITF86116SQT
ITF86116SQT2
TB370
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13E1
Abstract: No abstract text available
Text: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode
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HUFA76404DK8T
13E1
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AN7254
Abstract: AN7260 ITF86174SQT ITF86174SQT2 TB370
Text: ITF86174SQT Data Sheet 9A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET Packaging TSSOP-8 Features • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = −10V - rDS(ON) = 0.024Ω, VGS = −4.5V - rDS(ON) = 0.027Ω, VGS = −4V • Gate to Source Protection Diode
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ITF86174SQT
AN7254
AN7260
ITF86174SQT
ITF86174SQT2
TB370
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AN7254
Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 MO-153AA
Text: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models
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ITF86116SQT
AN7254
AN7260
ITF86116SQT
ITF86116SQT2
TB370
MO-153AA
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76404DK8
Abstract: HUFA76404DK8T RG103 KP108
Text: HUFA76404DK8T N-Channel Dual MOSFET 62V, 3.2A, 132mΩ Features Applications rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A Motor / Body Load Control Qg(tot) = 3.8nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode
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HUFA76404DK8T
HUFA76404DK8T
76404DK8
RG103
KP108
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IRF530
Abstract: IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application
Text: IRF530 Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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IRF530
O-220AB
IRF530
IRF530T
IRF530 fairchild
929e1
980E3
IRF530 mosfet
ON semiconductor N51
IRF530 application
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KP-69
Abstract: mosfet 30V 18A TO 252 FDD24AN06LA0
Text: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management
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FDD24AN06LA0
O-252AA
KP-69
mosfet 30V 18A TO 252
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ccd sensor back illuminated
Abstract: p31b ccd KE CCD424 linear CCD 512 ccd 512 x 512 E 1024 linear CCD-Sensor p2-1a fast linear ccd 512
Text: CCD424 1024 x 1024 Pixel Image Area Split Frame Transfer CCD Sensor FEATURES 1024 x 1024 Pixels Split Frame Transfer CCD 21 µm x 21 µm Pixel 21.50 mm x 21.50 mm Image Area 11.13 mm x 21.50 mm x2 Storage Areas 100% Fill Factor Back Illuminated Bi-directional Serial Registers
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CCD424
CCD424
ccd sensor back illuminated
p31b
ccd KE
linear CCD 512
ccd 512 x 512
E 1024
linear CCD-Sensor
p2-1a
fast linear ccd 512
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75542P
Abstract: AN9321 HUF75542P3 HUF75542S3S HUF75542S3ST TB334
Text: HUF75542P3, HUF75542S3S Data Sheet December 2001 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS ON = 0.014Ω, VGS = 10V GATE SOURCE DRAIN (FLANGE)
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HUF75542P3,
HUF75542S3S
O-220AB
O-263AB
HUF75542P3
75542P
75542P
AN9321
HUF75542P3
HUF75542S3S
HUF75542S3ST
TB334
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n20 n21 fet
Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
Text: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital
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FDG6318PZ
1200m
SC-70-6
n20 n21 fet
53E1
FDG6318PZ
SC70-6
dual transistors sc-70-6
N2 SC70
SC-70-6 zener 15v
27E4
55E-4
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ISL9N2357D3ST
Abstract: N2357 n2357d
Text: ISL9N2357D3ST Data Sheet June 2002 30V, 0.007 Ohm, 35A, N-Channel UltraFET Trench Power MOSFET UltraFET® Trench UltraFET® Trench from Fairchild is a new advanced MOSFET technology that achieves the lowest possible onresistance per silicon area while maintaining fast switching
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ISL9N2357D3ST
5600pF
ISL9N2357D3ST
N2357
n2357d
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Untitled
Abstract: No abstract text available
Text: FDP8874 N May 2008 FDP8874 tmM N-Channel PowerTrench MOSFET 30V, 114A, 5.3mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDP8874
FDP8874
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TC124E
Abstract: 2e7 power diode KP350 46E-1 FDP8896 26e3 nl101 46e1
Text: FDP8896 N May 2008 FDP8896 tmM N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDP8896
O-220AB
FDP8896
TC124E
2e7 power diode
KP350
46E-1
26e3
nl101
46e1
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IRF630N
Abstract: TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3
Text: IRF630N N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models
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IRF630N
O-220
100oC,
IRF630N
TO-220 1030
630N
marking s2A
N-Channel MOSFET 200v
52e3
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FQP45N03LT
Abstract: FQP45N03L
Text: FQP45N03L N-Channel Logic Level MOSFETs 30V, 39A, 0.021Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQP45N03L
1450pF
O-220AB
FQP45N03LT
FQP45N03L
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AN7254
Abstract: AN7260 AN9321 AN9322 HUF75321D3ST TA75321 TB334
Text: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75321D3ST
AN7254
AN7260
AN9321
AN9322
HUF75321D3ST
TA75321
TB334
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Untitled
Abstract: No abstract text available
Text: HUF75545P3, HUF75545S3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 80 V, 75 A, 10 mΩ Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF75545S3ST HUF75545P3 • Ultra Low On-Resistance
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HUF75545P3,
HUF75545S3S
O-220AB
O-263AB
HUF75545S3ST
HUF75545P3
75545P
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Untitled
Abstract: No abstract text available
Text: HUF75652G3 October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 75 A, 8 mΩ Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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HUF75652G3
O-247
75652G
HUF75652G3
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mosfet SPICE MODEL
Abstract: self-heating subckt pspice high frequency mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods ronan difference between orcad pspice parallel mosfet MOSFET S1A FDP038AN08A0 PSPICE Orcad
Text: Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature Compensation Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET
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67E-3
Abstract: FDI038AN06A0 FDP038AN06A0 n10 diode abs s1a NL104
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • r DS ON = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
67E-3
FDI038AN06A0
n10 diode
abs s1a
NL104
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